公开(公告)号：JP2005292157A

公开(公告)日：2005-10-20

申请号：JP2005163438

申请日：2005-06-03

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MURAKOSHI HISAYA ,  SHINADA HIROYUKI ,  TODOKORO HIDEO ,  MAKINO HIROSHI ,  ANAMI YOSHIHIRO

IPC: G01N23/225 ,  G01N23/20 ,  H01J37/28 ,  H01J37/29 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a defect inspecting apparatus which realizes high resolution and high inspection speed in a technology for inspecting defects, foreign substances, residues and steps in patterns on a wafer in a manufacturing process of a semiconductor device by using an electron beam. SOLUTION: An electric field is formed on a surface of an inspected semiconductor 7, and decelerates the electron beam. The electron beam (the planar electron beam) including an energy component incapable of reaching the surface of the inspected semiconductor by the deceleration electric field and having a constant area, is reflected in the vicinity of the surface of the inspected semiconductor and imaged by an imaging lens 11. Images of a plurality of regions on the surface of the inspected semiconductor are acquired, and stored in an image storage. The existence and locations of the defects in the regions are measured by comparing the stored image of a plurality of the regions. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在半导体器件的制造过程中通过使用在半导体器件的制造过程中检查晶片上的缺陷，异物，残留物和步骤的技术中实现高分辨率和高检测速度的缺陷检查装置 电子束。 解决方案：在被检测半导体7的表面上形成电场，并使电子束减速。 包括不能通过减速电场到达被检测半导体的表面并具有恒定面积的能量分量的电子束（平面电子束）被反射在被检查的半导体的表面附近，并通过成像 获取被检查半导体表面上的多个区域的图像，并将其存储在图像存储器中。 通过比较存储的多个区域的图像来测量区域中的缺陷的存在和位置。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005129546A

公开(公告)日：2005-05-19

申请号：JP2005001990

申请日：2005-01-07

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SHINADA HIROYUKI ,  MURAKOSHI HISAYA ,  TODOKORO HIDEO ,  MAKINO HIROSHI ,  ANAMI YOSHIHIRO

IPC: H01L21/66 ,  H01J37/22 ,  H01J37/29

Abstract: PROBLEM TO BE SOLVED: To provide a high-resolution and high-speed defect inspection apparatus for inspecting the defect of a pattern on a wafer, foreign particles, residues, steps or the like by an electron beam in a process for manufacturing a semiconductor device. SOLUTION: The defect inspection apparatus is constructed as to store images of a plurality of areas of a semiconductor surface to be inspected by forming images by a image forming lens 11 by reflecting an electron beam (a planar electron beam) at the near surface of a semiconductor to be inspected. The electron beam contains an energy component that can not reach the surface of the semiconductor to be inspected caused by a decelerating electronic field formed for decelerating the electron beam on the surface of the semiconductor 7 to be inspected. The defect inspection apparatus is constituted to detect the presence or absence of defects and positions of the defects in the area by comparing stored images in the plurality of areas. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于在制造过程中通过电子束检查晶片上的图案的缺陷，异物，残留物，步骤等的高分辨率和高速缺陷检查装置 半导体器件。 解决方案：缺陷检查装置被构造为通过在近处反射电子束（平面电子束），通过由成像透镜11形成图像来存储要检查的半导体表面的多个区域的图像 要检查的半导体的表面。 电子束包含能量分量，该能量成分不能到达要被检查的半导体的表面，这是由形成为用于使待检查的半导体7的表面上的电子束减速的减速电子场引起的。 缺陷检查装置被构成为通过比较多个区域中存储的图像来检测区域中缺陷的存在或不存在以及缺陷的位置。 版权所有（C）2005，JPO＆NCIPI