公开(公告)号：JP2013206641A

公开(公告)日：2013-10-07

申请号：JP2012072710

申请日：2012-03-28

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： YOKOSUKA TOSHIYUKI ,  RI AKIRA ,  KAZUMI HIDEYUKI ,  MAKINO HIROSHI ,  MIZUHARA YUZURU ,  IZAWA MIKI ,  HATANO MICHIO ,  MOMOI YOSHINORI

IPC: H01J37/28 ,  G01B15/00 ,  G01B15/04 ,  H01J37/05 ,  H01J37/244 ,  H01L21/66

CPC classification number: H01J37/28 ,  G01B15/00 ,  G01B15/04 ,  H01J2237/0492 ,  H01J2237/24495 ,  H01J2237/281 ,  H01J2237/2815 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide a scanning electron microscope forming an electric field that pulls up electrons discharged from the bottom of a hole or the like with high efficiency even when a sample surface is made of a conductive material.SOLUTION: A scanning electron microscope includes: a deflector for deflecting a scanning position of an electron beam; a sample stage for mounting a sample thereon; and a controller for controlling the deflector or the sample stage so that an underlying lower layer pattern of a pattern to be measured irradiates underlying other patterns with the electron beam before the pattern to be measured is irradiated with the electron beam.

Abstract translation: 要解决的问题：提供一种形成电场的扫描电子显微镜，即使当样品表面由导电材料制成时，也可以高效率地拉出从孔底等排出的电子。溶解度：扫描电子显微镜 包括：偏转器，用于偏转电子束的扫描位置; 用于在其上安装样品的样品台; 以及控制器，用于控制偏转器或样品台，使得要被测量的图案的下面的下层图案用电子束照射待测量图案之前用电子束照射下面的其他图案。

公开(公告)号：JP2008215969A

公开(公告)日：2008-09-18

申请号：JP2007052166

申请日：2007-03-02

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TANIMOTO AKIYOSHI ,  OTA HIROYA ,  MAKINO HIROSHI ,  FUNATSU RYUICHI

IPC: G01N23/225 ,  H01J37/28 ,  H01L21/66

CPC classification number: G01N23/225 ,  H01J37/265 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam applying apparatus capable of reconciling high flaw detection sensitivity and high inspection speed, with respect to a sample having various characteristics in a multibeam-type semiconductor inspection device.
SOLUTION: The arrangement of a primary beam on the sample is made variable and beam arrangement for inspecting the sample at a high speed in the optimum inspection specifications, on the basis of the characteristics is further extracted. A large number of optical parameters and apparatus parameters are optimized. Furthermore, the characteristics of the extracted primary beam are measured and adjusted.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够调和高瑕疵检测灵敏度和高检查速度的带电粒子束施加装置相对于在多光束型半导体检查装置中具有各种特性的样品。 解决方案：进一步提取样品上的主光束在样品上的布置，并根据特性进一步提取用于在最佳检测规格中高速检查样品的光束布置。 优化了大量的光学参数和设备参数。 此外，测量和调整提取的一次光束的特性。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2005019258A

公开(公告)日：2005-01-20

申请号：JP2003183713

申请日：2003-06-27

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SASAKI HIROKO ,  KASAI YUJI ,  TANIMOTO NORIFUMI ,  SHINADA HIROYUKI ,  MAKINO HIROSHI ,  TAKATO ATSUKO

IPC: G03F1/84 ,  H01J37/141 ,  H01J37/244 ,  H01J37/28 ,  H01L21/027 ,  H01L21/66 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide an inspection device using an electron beam and capable of providing a stable inspection result by preventing degradation of inspection sensitivity by efficiently detecting an information signal.
SOLUTION: This inspection device is used for detecting a defect of a sample by generating an image from an information signal obtained by irradiating the sample with an electron beam. The inspection device is equipped with a lens control means for controlling excitation of a focusing lens and an objective lens so as to increase or decrease it when a negative voltage of a retarding voltage applied to the sample in order to decelerate the electron beam immediately before the sample is increased to the positive side or the negative side.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种使用电子束的检查装置，并且能够通过有效地检测信息信号来防止检查灵敏度的降低而提供稳定的检查结果。 解决方案：该检查装置用于通过从通过用电子束照射样品获得的信息信号产生图像来检测样品的缺陷。 检查装置配备有用于控制聚焦透镜和物镜的激发的透镜控制装置，以便在施加到样品的延迟电压的负电压时增加或减小其，以便在紧接在样品前的电子束 样品增加到正侧或负面。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2011228311A

公开(公告)日：2011-11-10

申请号：JP2011136946

申请日：2011-06-21

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MAKINO HIROSHI ,  HASEGAWA MASAKI ,  MARUYAMA MOMOYO

IPC: H01J37/29 ,  G01N23/225 ,  G01Q30/02 ,  G01Q60/24 ,  H01J37/20 ,  H01J37/22 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method to inspect height variations of a sample.SOLUTION: An inspection device comprises: a holder 211 holding a sample 29; a charge control unit 23 which electrically charges the sample 29 held by the holder 211; a retarding power supply 24 which applies a voltage to the sample 29 held by the holder 211; an electron optical system 20 which irradiates an electron beam toward the sample 29 supplied with the voltage from the retarding power supply 24, thereby causing mirror electrons retracted from the vicinity of a surface of the sample 29 to form an image; and an image processing unit 27 which processes a mirror image formed by the mirror electrons. The image processing unit 27 outputs, as height variations of the sample 29, information based on a difference between the mirror image formed by the mirror electrons and a standard mirror image prepared in advance.

Abstract translation: 要解决的问题：提供一种用于检查样品的高度变化的装置和方法。 检查装置包括：保持样品29的保持器211; 充电控制单元23，其对由保持器211保持的样本29进行充电; 延迟电源24，其对由保持器211保持的样本29施加电压; 电子光学系统20，其向来自延迟电源24的电压供给电子束照射电子束，从而使得从电极24的表面附近缩回的镜电子形成图像; 以及处理由镜电子形成的镜像的图像处理单元27。 图像处理单元27作为样本29的高度变化输出基于由镜电子形成的镜像与预先准备的标准镜像之间的差的信息。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011049041A

公开(公告)日：2011-03-10

申请号：JP2009196748

申请日：2009-08-27

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： RI UEN ,  MAKUUCHI MASAMI ,  IMAGAWA KENGO ,  OTA HIROYA ,  MAKINO HIROSHI ,  TAKAHASHI HIROYUKI ,  GUNJI YASUHIRO

IPC: H01J37/147 ,  H01J37/22 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To provide a high-sensitivity, a high-throughput electron beam type inspection device and an inspection method for alleviating artificial defects caused by scanning shift of primary electron beams. SOLUTION: A semiconductor inspection device with a plurality of primary electron beams is provided with an adjustment means for setting a position where the plurality of primary electron beams are emitted to a sample for inspection. An irradiation positions of the plurality of primary electron beams on the sample are set in accordance with a repetition pattern interval of the sample for the inspection, and repetition pattern images of the comparison object are obtained at the same time. On the plurality of images obtained at the same time, scanning shift of the primary electron beams is the same at places of the repetition pattern to be compared. For that, artificial defects caused by the scanning shift of the electron beams are eliminated on the images, whereby a high-sensitivity, the high-throughput electron beam type inspection device, and the inspection method can be provided. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供高灵敏度，高通量电子束型检查装置和用于减轻由一次电子束的扫描偏移引起的人为缺陷的检查方法。 解决方案：具有多个一次电子束的半导体检查装置设置有用于将发射多个一次电子束的位置设置到用于检查的样品的调节装置。 根据用于检查的样本的重复图案间隔来设定样本上的多个一次电子束的照射位置，并且同时获得比较对象的重复图案图像。 在同时获得的多个图像中，一次电子束的扫描移位在要比较的重复图案的位置处相同。 为此，在图像上消除了由电子束的扫描偏移引起的人造缺陷，从而可以提供高灵敏度，高通量电子束型检查装置和检查方法。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010073507A

公开(公告)日：2010-04-02

申请号：JP2008240190

申请日：2008-09-19

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： HONDA TOSHIFUMI ,  FUJII KEN ,  GUNJI YASUHIRO ,  HIROI TAKASHI ,  MAKINO HIROSHI

IPC: H01J37/28 ,  H01J37/21

Abstract: PROBLEM TO BE SOLVED: To solve a problem that in order to realize an electron optical system in which a surface electric field control electrode is installed and a primary electron beam diameter is reduced, the surface electric field control electrode needs to be adjacent to a wafer, and for that reason, it becomes impossible to carry out height detection for focusing.
SOLUTION: A height measurement position is shifted from a primary electron irradiation position, and a height correction mechanism is installed to correct height shift due to differences of horizontal position of the height measurement position, the primary electron irradiation position, and time. Moreover, in order to minimize amount of shift, a shield plate having the same potential as that of the wafer is placed at the surrounding of the surface electric field control electrode, and height measurement is carried out by installing a light path at the plate.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题为了实现安装表面电场控制电极并且一次电子束直径减小的电子光学系统的问题，表面电场控制电极需要相邻 因此，不可能进行聚焦的高度检测。 解决方案：高度测量位置从一次电子照射位置偏移，并且安装高度校正机构以校正由于高度测量位置，一次电子照射位置和时间的水平位置的差异引起的高度偏移。 此外，为了最小化移位量，将具有与晶片相同的电位的屏蔽板放置在表面电场控制电极的周围，并且通过在板上安装光路来进行高度测量。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007206005A

公开(公告)日：2007-08-16

申请号：JP2006027861

申请日：2006-02-06

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： HASEGAWA MASAKI ,  MURAKOSHI HISAYA ,  MAKINO HIROSHI

IPC: G01N23/20 ,  H01J37/29 ,  H01L21/66

CPC classification number: H01J37/265 ,  G06T7/0004 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/29 ,  H01J2237/22 ,  H01J2237/24592

Abstract: PROBLEM TO BE SOLVED: To solve a problem wherein the optimum inspection condition is difficult to be determined, because an image formation principle is different from that of a conventional SEM type inspection device, in a mirror electron image focusing type wafer inspection device for acquiring an inspection image using a mirror electron. SOLUTION: A relation among an inspection speed S, a dimension D of an pixel of an inspection digital signal image, a size of the inspection image, and an image signal taking-in period P by a time territorial integration system, is graph-displayed on an operation screen, so as to investigate intuitively various conditions of the inspection speed, inspection sensitivity and the like by a user. A set of values of a screen size, a width of the inspection image, and an operation period for a TDI sensor is easily determined so as to obtain the necessary inspection speed, by looking through the graphic display. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题为了解决难以确定最佳检查条件的问题，由于图像形成原理与常规SEM型检查装置的图像形成原理不同，在镜像电子图像聚焦型晶片检查装置 用于使用镜电子获取检查图像。 解决方案：通过时域积分系统，检查速度S，检查数字信号图像的像素的尺寸D，检查图像的尺寸和图像信号取入期间P之间的关系是 图形显示在操作画面上，以便直观地研究用户的检查速度，检查灵敏度等的各种条件。 容易地确定一组屏幕尺寸，检查图像的宽度和TDI传感器的操作周期的值，以便通过查看图形显示来获得必要的检查速度。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007128738A

公开(公告)日：2007-05-24

申请号：JP2005320318

申请日：2005-11-04

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： KOYAMA HIKARI ,  MAKINO HIROSHI

IPC: H01J37/29 ,  H01J37/20 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To detect poor openings of high aspect contact holes formed on a wafer rapidly and highly precisely in a mirror electron projection system.
SOLUTION: An opening hole bottom of a sample substrate is irradiated with an ultraviolet ray having the wavelength allowing the opening hole bottom to emit photoelectrons to charge only a side wall of the opening hole, and thus different equipotential surfaces are produced right above the opening holes and non-opening holes. If this distortion is inspected by a mirror electron projection type inspection apparatus, the opening holes and the non-opening holes are distinguished from each other, so that poor openings defect of holes having the high aspect ratio are detected.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：在镜电子投影系统中快速高精度地检测在晶片上形成的高方形接触孔的差的开口。 解决方案：用具有允许开孔底部的波长发射光电子的紫外线照射样品基板的开孔底部，仅对开孔的侧壁充电，因此在上方产生不同的等电位面 开孔和非开孔。 如果通过镜电子投射型检查装置检查了这种变形，则开孔和非开孔彼此不同，从而检测出具有高纵横比的孔的差的开口缺陷。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007053035A

公开(公告)日：2007-03-01

申请号：JP2005238105

申请日：2005-08-19

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TEI TOMOKI ,  MAKINO HIROSHI ,  KOYAMA HIKARI ,  SATO MITSUGI

IPC: H01J37/28 ,  H01L21/66

CPC classification number: G01N23/2251 ,  G01R31/307 ,  H01J37/026 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/0047 ,  H01J2237/0048 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide an inspection and measuring device and an inspection and measuring method capable of measuring electrostatic charge potential of a test piece with high precision compared with a conventional technology and capable of measuring the charge potential with a simple structure. SOLUTION: With respect to a pattern inspection and measurement technology of such as a semiconductor device and a photomask using electron beam, fluctuations in charge potential on the surface of an inspecting test piece can be suppressed by optimizing the energy of a primary electron beam to be irradiated, when a S-shape curve is observed for the semiconductor device to become each inspection and measuring object. When the surface potential of the semiconductor device is measured by this device, more precise potential measurement than a conventional one becomes possible without almost affecting the original charge potential of an insulating film surface. Since the measurement of surface potential is possible without mounting a dedicated device for wafer surface potential measurement such as an energy filter, cost reduction of the device is also obtained. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种与常规技术相比能够高精度地测量试样的静电电荷的检查和测量装置和检查和测量方法，并且能够以简单的结构测量电荷电位 。 解决方案：关于半导体器件和使用电子束的光掩模的图案检查和测量技术，可以通过优化一次电子的能量来抑制检查试片的表面上的电荷电位的波动 当对于半导体器件观察到S形曲线成为每个检查和测量对象时，要照射的光束。 当通过该器件测量半导体器件的表面电位时，与常规电位测量相比，可以在几乎不影响绝缘膜表面的原始电荷电位的情况下进行更精确的电位测量。 由于在不安装用于诸如能量过滤器的晶片表面电位测量的专用装置的情况下可以测量表面电位，因此也可以获得装置的成本降低。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007051902A

公开(公告)日：2007-03-01

申请号：JP2005236305

申请日：2005-08-17

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： OKUDA HIROTO ,  HIROI TAKASHI ,  MAKINO HIROSHI

IPC: G01N23/225 ,  H01J37/21 ,  H01J37/29

CPC classification number: H01J37/21 ,  G01R31/307 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/216 ,  H01J2237/2443 ,  H01J2237/2446 ,  H01J2237/262

Abstract: PROBLEM TO BE SOLVED: To correct a change in a focal point offset resulting from a change of a charged state after measurement for calibration, in particular, during execution of inspection. SOLUTION: This mapping projection type electron beam inspection device includes a focusing control part having a focusing measure calculating means having a focusing measure sensor part, and for calculating a focusing measure based on a plurality of image signals converted by the focusing measure sensor part, a focal position calculating means for calculating a height of a confocal plane conjugated with a convergence plane of a surface electron beam by an objective lens as to an electron imaging optical system, based on the focal measure calculated by the focusing measure calculating means, and for calculating a focal position of the objective lens for detecting a focusing inspection image of an inspection area, by an inspection image detecting sensor part, based on the calculated height of the confocal plane, and a focal position correcting means for correcting the focal point of the objective lens, in response to the focal position of the objective lens calculated by the focal position calculating means. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题是：校正测量后的充电状态变化导致的焦点偏移的变化，特别是在执行检查期间。 解决方案：该映射投影型电子束检查装置包括具有聚焦测量计算装置的聚焦控制部分，该聚焦测量计算装置具有聚焦测量传感器部分，并且用于基于由聚焦测量传感器转换的多个图像信号来计算聚焦度量 焦点位置计算装置，用于基于由聚焦测量计算装置计算的焦点量度，计算与物镜相关的电子成像光学系统的与表面电子束的会聚面共轭的共焦面的高度， 并且用于根据计算出的共焦平面的高度，通过检查图像检测传感器部分计算用于检测检查区域的聚焦检查图像的物镜的焦点位置和用于校正焦点的焦点位置校正装置 响应于由焦点位置计算的物镜的焦点位置 计算装置。 版权所有（C）2007，JPO＆INPIT