公开(公告)号：JP2005292157A

公开(公告)日：2005-10-20

申请号：JP2005163438

申请日：2005-06-03

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MURAKOSHI HISAYA ,  SHINADA HIROYUKI ,  TODOKORO HIDEO ,  MAKINO HIROSHI ,  ANAMI YOSHIHIRO

IPC: G01N23/225 ,  G01N23/20 ,  H01J37/28 ,  H01J37/29 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a defect inspecting apparatus which realizes high resolution and high inspection speed in a technology for inspecting defects, foreign substances, residues and steps in patterns on a wafer in a manufacturing process of a semiconductor device by using an electron beam. SOLUTION: An electric field is formed on a surface of an inspected semiconductor 7, and decelerates the electron beam. The electron beam (the planar electron beam) including an energy component incapable of reaching the surface of the inspected semiconductor by the deceleration electric field and having a constant area, is reflected in the vicinity of the surface of the inspected semiconductor and imaged by an imaging lens 11. Images of a plurality of regions on the surface of the inspected semiconductor are acquired, and stored in an image storage. The existence and locations of the defects in the regions are measured by comparing the stored image of a plurality of the regions. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在半导体器件的制造过程中通过使用在半导体器件的制造过程中检查晶片上的缺陷，异物，残留物和步骤的技术中实现高分辨率和高检测速度的缺陷检查装置 电子束。 解决方案：在被检测半导体7的表面上形成电场，并使电子束减速。 包括不能通过减速电场到达被检测半导体的表面并具有恒定面积的能量分量的电子束（平面电子束）被反射在被检查的半导体的表面附近，并通过成像 获取被检查半导体表面上的多个区域的图像，并将其存储在图像存储器中。 通过比较存储的多个区域的图像来测量区域中的缺陷的存在和位置。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005129546A

公开(公告)日：2005-05-19

申请号：JP2005001990

申请日：2005-01-07

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SHINADA HIROYUKI ,  MURAKOSHI HISAYA ,  TODOKORO HIDEO ,  MAKINO HIROSHI ,  ANAMI YOSHIHIRO

IPC: H01L21/66 ,  H01J37/22 ,  H01J37/29

Abstract: PROBLEM TO BE SOLVED: To provide a high-resolution and high-speed defect inspection apparatus for inspecting the defect of a pattern on a wafer, foreign particles, residues, steps or the like by an electron beam in a process for manufacturing a semiconductor device. SOLUTION: The defect inspection apparatus is constructed as to store images of a plurality of areas of a semiconductor surface to be inspected by forming images by a image forming lens 11 by reflecting an electron beam (a planar electron beam) at the near surface of a semiconductor to be inspected. The electron beam contains an energy component that can not reach the surface of the semiconductor to be inspected caused by a decelerating electronic field formed for decelerating the electron beam on the surface of the semiconductor 7 to be inspected. The defect inspection apparatus is constituted to detect the presence or absence of defects and positions of the defects in the area by comparing stored images in the plurality of areas. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于在制造过程中通过电子束检查晶片上的图案的缺陷，异物，残留物，步骤等的高分辨率和高速缺陷检查装置 半导体器件。 解决方案：缺陷检查装置被构造为通过在近处反射电子束（平面电子束），通过由成像透镜11形成图像来存储要检查的半导体表面的多个区域的图像 要检查的半导体的表面。 电子束包含能量分量，该能量成分不能到达要被检查的半导体的表面，这是由形成为用于使待检查的半导体7的表面上的电子束减速的减速电子场引起的。 缺陷检查装置被构成为通过比较多个区域中存储的图像来检测区域中缺陷的存在或不存在以及缺陷的位置。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004014207A

公开(公告)日：2004-01-15

申请号：JP2002163701

申请日：2002-06-05

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SHINADA HIROYUKI ,  MURAKOSHI HISAYA ,  TAKATO ATSUKO ,  ANAMI YOSHIHIRO ,  TANIMOTO NORIFUMI

IPC: H01L21/66 ,  H01J37/06 ,  H01J37/09 ,  H01J37/22 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To make an inspection device detect defects with higher sensitivity without preparing a plurality of electron sources, where the inspection device detects the defects in circuit patterns for a semiconductor device on a wafer during a manufacturing process of the semiconductor device by using potential contrast.
SOLUTION: An aperture for controlling an electron beam current has one or a plurality of holes other than a hole at a center of an optical axis on the periphery of the hole at the center so that spherical aberration of an objective lens forces electron beams passing through the holes to land at places a little distant from landing point of the electron beam coming from the hole at the center.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2005164608A

公开(公告)日：2005-06-23

申请号：JP2005001991

申请日：2005-01-07

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SHINADA HIROYUKI ,  MURAKOSHI HISAYA ,  TODOKORO HIDEO ,  MAKINO HIROSHI ,  ANAMI YOSHIHIRO

IPC: G01N23/225 ,  G01R31/302 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a defect inspection device realizing high resolution and an increase in an inspection speed in a technology for inspecting a pattern defect, foreign matter, residue, a step and the like on a wafer in a production process of a semiconductor by an electron beam. SOLUTION: An electric field retarding an electron beam is formed above the surface of an inspected semiconductor 7, an electron beam (sheet type electron beam) including an energy constituent, which is prevented from reaching the surface of the inspected semiconductor by the retarding electric field, and having a fixed area is reflected in the vicinity very close to the inspected semiconductor surface and focused by an imaging lens 11, and images of a plurality of areas on the inspected semiconductor surface are acquired to be stored in an image storage part. When the stored images of a plurality of areas are compared with each other, existence/absence of a defect and the position of the detect inside the area are measured. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：为了提供一种在生产过程中在晶片上检测图案缺陷，异物，残渣，台阶等的技术中实现高分辨率和提高检查速度的缺陷检查装置 的电子束。 解决方案：在被检测的半导体7的表面上方形成有电子束的电场，包括能量成分的电子束（片状电子束），该电子束（片状电子束）被防止被检测的半导体的表面到达 并且具有固定区域的反射在非常接近被检查的半导体表面并被成像透镜11聚焦的附近，并且获取被检查的半导体表面上的多个区域的图像以被存储在图像存储器 部分。 当将多个区域的存储图像彼此进行比较时，测量缺陷的存在/不存在以及区域内的检测位置。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004342470A

公开(公告)日：2004-12-02

申请号：JP2003138085

申请日：2003-05-16

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： ANAMI YOSHIHIRO ,  SHINADA HIROYUKI ,  TAKATO ATSUKO ,  NISHIYAMA HIDETOSHI

IPC: G01R31/302 ,  H01J37/04 ,  H01J37/28 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To detect defects with high sensitivity while obtaining a fine image with high speed, stability and contrast. SOLUTION: The shapes of a control electrode and an earth electrode provided on a wafer are changed so that the height of a potential barrier formed by the control electrode is set to 1 mm or lower. The shape of a throttle for limiting electron beam current or of a hole of the control electrode is set to be asymmetric and the electric field near the wafer to be inspected is controlled by the control electrode to a potential same or lower than that of the wafer to be inspected to change the direction of the electron beam passing through the asymmetrical hole, which is an aberration component of the electron beam passing through the concentric hole. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004014485A

公开(公告)日：2004-01-15

申请号：JP2002170796

申请日：2002-06-12

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MURAKOSHI HISAYA ,  SHINADA HIROYUKI ,  TODOKORO HIDEO ,  MAKINO HIROSHI ,  ANAMI YOSHIHIRO

IPC: G01B15/00 ,  G01N23/00 ,  H01J37/141 ,  H01J37/20 ,  H01J37/22 ,  H01J37/29 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a defect inspection device of a high resolution realizing the increase of inspection speed in a technology of inspecting defects of patterns, foreign matters, remnants, steps or the like on a wafer in the course of manufacturing process by electron beams. SOLUTION: An electric field for decelerating electron beam is formed on the surface of a semiconductor 7 to be tested, and the electron beam with a certain area (plane-shaped electron beam), including energy component which can not reach the surface of the semiconductor tested due to deceleration electric field, are reflected at the very vicinity of the surface of the semiconductor to be tested to form an image with an image-forming lens 11, and the image of a plurality of areas of the surface of the semiconductor to be tested are obtained and stored in an image storage part. By comparing the images of the plurality of the areas, presence and position of defects in the areas are measured. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种高分辨率的缺陷检查装置，其实现了在制造过程中在晶片上检查图案，异物，残余物或步骤等的缺陷的缺陷的技术中提高检查速度的缺陷检查装置 电子束处理。 解决方案：在要测试的半导体7的表面上形成用于减速电子束的电场，并且具有一定面积（平面形电子束）的电子束，包括不能到达表面的能量分量 由于减速电场而被测试的半导体在被测半导体表面的非常附近被反射以形成具有图像形成透镜11的图像，并且图像的表面的多个区域的图像 获得要测试的半导体并将其存储在图像存储部分中。 通过比较多个区域的图像，测量区域中的缺陷的存在和位置。 版权所有（C）2004，JPO