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    CoFe-BASED ALLOY FOR SOFT MAGNETIC FILM LAYERS IN PERPENDICULAR MAGNETIC RECORDING MEDIA, AND SPUTTERING TARGET MATERIAL
    52.
    发明专利
    CoFe-BASED ALLOY FOR SOFT MAGNETIC FILM LAYERS IN PERPENDICULAR MAGNETIC RECORDING MEDIA, AND SPUTTERING TARGET MATERIAL 有权
    全磁性记录介质中软磁膜层的CoFe基合金和溅射靶材

    公开(公告)号：JP2014156639A

    公开(公告)日：2014-08-28

    申请号：JP2013028726

    申请日：2013-02-18

    申请人： Sanyo Special Steel Co Ltd ,  山陽特殊製鋼株式会社

    发明人： SAWADA TOSHIYUKI

    IPC分类号： C22C45/04 ,  C22C45/02 ,  C23C14/34 ,  G11B5/667 ,  G11B5/851

    CPC分类号： C23C14/3414 ,  C22C33/003 ,  C22C45/02 ,  C22C45/04 ,  G11B5/667 ,  G11B5/851 ,  H01F41/183

    摘要： PROBLEM TO BE SOLVED: To provide a CoFe-based alloy for soft magnetic thin film layers in perpendicular magnetic recording media; and to provide a sputtering target material.SOLUTION: An alloy for soft magnetic film layers in perpendicular magnetic recording media is formed of one or more elements selected from among Ge, Ru, Rh, Pd, Re, Os, Ir and Pt, and one or more elements selected from among Sc, Y, lanthanoids (atomic numbers 57 to 71), Ti, Zr, Hf, V, Nb, Ta, Mo, W and B, with the balance made up of Co, Fe and unavoidable impurities. This alloy satisfies, by atom, all of the following formulae (1) to (4): (1) 0.1%≤TCR≤10%; (2) 5%≤TAM≤25%; (3) 13%≤TCR/2+TAM+TNM≤25%; and (4) 0≤Fe%/(Fe%+Co%)≤0.80.

    摘要翻译： 要解决的问题：在垂直磁记录介质中提供用于软磁薄膜层的CoFe基合金; 并提供溅射靶材料。解决方案：用于垂直磁记录介质中的软磁性膜层的合金由选自Ge，Ru，Rh，Pd，Re，Os，Ir和Pt中的一种或多种元素形成，一种 或更多选自Sc，Y，镧系元素（原子序数57〜71），Ti，Zr，Hf，V，Nb，Ta，Mo，W和B的元素，余量由Co，Fe和不可避免的杂质构成。 该合金按原子满足下述式（1）〜（4）的全部：（1）0.1％≤TCR≤10％ （2）5％≤TAM≤25％; （3）13％≤TCR/ 2 + TAM +TNM≤25％; 和（4）0≤Fe％/（Fe％+ Co％）≤0.80。

    Perpendicular magnetic recording medium and magnetic storage device
    55.
    发明专利
    Perpendicular magnetic recording medium and magnetic storage device 有权
    全能磁记录介质和磁存储器件

    公开(公告)号：JP2014081981A

    公开(公告)日：2014-05-08

    申请号：JP2012230239

    申请日：2012-10-17

    申请人： Hitachi Ltd ,  株式会社日立製作所

    发明人： SHIROISHI YOSHIHIRO ,  HIRAYAMA YOSHIYUKI ,  FUKUDA HIROSHI ,  SATO AKIRA

    IPC分类号： G11B5/66 ,  C23C14/34 ,  G11B5/02 ,  G11B5/31 ,  G11B5/64 ,  G11B5/65 ,  G11B5/738 ,  G11B5/851

    CPC分类号： G11B5/65 ,  G11B5/66 ,  G11B5/7325 ,  G11B5/851

    摘要： PROBLEM TO BE SOLVED: To provide a micro-assisted magnetic head having a distribution in oscillation frequency, a magnetic recording medium suitable to a recording system, and the manufacturing method thereof.SOLUTION: A laminated unit layer is composed of a first sub layer including three or more layers of a sub layer in which film thickness is larger than zero and less than 1 nm, and including 50% or more of at least one kind of an element of a group consisting of Co, Fe, Ni as a main element, and a second sub layer having an element different from the main element of the first sub layer as a main element, and a plurality of magnetic layers constitutes a recording layer, the plurality of magnetic layers having a magnetic layer which has, as a top layer, a plurality of laminated unit layers with compositions of sub layers or film thickness are different.

    摘要翻译： 要解决的问题：提供一种具有振荡频率分布的微辅助磁头，适用于记录系统的磁记录介质及其制造方法。解决方案：层叠单元层由包括第一子层 三层以上的层厚度大于零且小于1nm的亚层，并且包括50％以上的由Co，Fe，Ni作为主要元素的至少一种元素 以及具有与第一子层的主要元件不同的元件作为主要元件的第二子层，并且多个磁性层构成记录层，所述多个磁性层具有磁性层，该磁性层具有作为顶部的磁性层 层，具有亚层或膜厚度的组合的多个层压单元层是不同的。

    Film forming method and a substrate rotating device and the vacuum processing apparatus
    59.
    发明专利
    Film forming method and a substrate rotating device and the vacuum processing apparatus 有权

    公开(公告)号：JP5371731B2

    公开(公告)日：2013-12-18

    申请号：JP2009291657

    申请日：2009-12-24

    申请人： キヤノンアネルバ株式会社

    发明人： 晋悟 宮川

    IPC分类号： G11B5/851 ,  C23C14/14 ,  C23C14/34

    摘要： PROBLEM TO BE SOLVED: To provide a substrate rotation device which contributes to cost reduction in a mechanism for rotating a substrate. SOLUTION: The substrate rotation device 30 rotates the substrate having a center hole to change a support position of the substrate 9 supported by a carrier 10. A pick 32 is attached to an end portion side of a shaft 34 which is linked to a drive source and can be moved forward, backward, upward, and downward. The pick 32 is inserted into the center hole of the substrate 9 as the shaft 34 is moved forward and backward. The pick 32 contacts two portions of a first support 43 and a second support 41 in an upper portion of the inside of the center hole. The second support 41 contacts a position further away from a position just over the center of the center hole than the first support 43, and couples to the first support 43 in an elastically bendable manner. COPYRIGHT: (C)2011,JPO&INPIT

    Co-Cr-Pt-B-BASED ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
    60.
    发明专利
    Co-Cr-Pt-B-BASED ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME 有权
    Co-Cr-Pt-B系合金溅射靶材及其制造方法

    公开(公告)号：JP2013231236A

    公开(公告)日：2013-11-14

    申请号：JP2013116564

    申请日：2013-06-03

    申请人： Jx Nippon Mining & Metals Corp ,  Jx日鉱日石金属株式会社

    发明人： MORISHITA YUTO ,  OGINO SHINICHI ,  NAKAMURA YUICHIRO

    IPC分类号： C23C14/34 ,  G11B5/851

    CPC分类号： C23C14/165 ,  C22C1/02 ,  C22C19/07 ,  C22F1/10 ,  C22F1/16 ,  C23C14/3414 ,  G11B5/851

    摘要： PROBLEM TO BE SOLVED: To provide a target which has a high leakage magnetic flux density and few microcracks in a B-rich layer, and to suppress arcing whose origin is the microcrack, in a Co-Cr-Pt-B-based alloy sputtering target.SOLUTION: A Co-Cr-Pt-B-based alloy sputtering target has no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in an area (field of view) of 100 μm×100 μm. A Co-Cr-Pt-B-based alloy cast ingot is hot-forged or hot-rolled, and is then cold-rolled or cold-forged at an elongation rate of 4% or less, and it is machined further to produce the target. In a method for producing the Co-Cr-Pt-B-based alloy sputtering target, the Co-Cr-Pt-B-based alloy cast ingot is hot-forged or hot-rolled, and is then rapidly cooled to -196°C to 100°C, and it is machined further to produce the target.

    摘要翻译： 要解决的问题：在Co-Cr-Pt-B系合金溅射中，为了提供在富含B的层中具有高泄漏磁通密度和少量微裂纹并且起始为微裂纹的电弧的靶 目标。解决方案：Co-Cr-Pt-B系合金溅射靶在100μm×100μm的区域（视场）中的富B相中不超过10个裂纹为0.1〜20μm。 将Co-Cr-Pt-B系合金铸锭进行热锻或热轧，然后以4％以下的伸长率进行冷轧或冷锻，并进一步加工成 目标。 在Co-Cr-Pt-B系合金溅射靶的制造方法中，对Co-Cr-Pt-B系合金铸锭进行热锻或热轧，然后迅速冷却至-196° C至100℃，并进一步加工以产生靶。