公开(公告)号：JPS61174680A

公开(公告)日：1986-08-06

申请号：JP1422085

申请日：1985-01-30

Applicant: HITACHI LTD

Inventor： MATSUDA HIROSHI ,  ITO KAZUHIRO ,  FUJIWARA ICHIRO ,  OUCHI HIROBUMI

IPC: H01L31/10 ,  H01L31/103

Abstract: PURPOSE:To reduce the capacity of a bonding pad, by forming at least a part of an insulating layer with at least heat-resistant resin material. CONSTITUTION:An N-type InP substrate 41 is laminated with an N-type InP layer 50, an N-type InGaAsP layer 42, N-type InP layer 43, an N-type InGaAsP layer 51, all undoped and sequentially grown. After a circular P-type transformation region is then formed by Zn diffusion in the N-type layers 51, 43, the first insulating film 45 a nd the second insulating layer 49 consisting of heat-resistant resin are deposited. Succeedingly an annular contact hole is opened through the insulating films, 45, 49 inside the P-type transformation region 44 by photolighography to form a P electrode 46 including a bonding pad section 47, followed by removal of the second insulating film 49 except the region under the P electrode 46 and further by formation of a N electrode 48 on the substrate side 41. Thus the capacity of the bonding pad can be decreased by adding the second insulating film 49.

公开(公告)号：JPS61129882A

公开(公告)日：1986-06-17

申请号：JP25236684

申请日：1984-11-28

Applicant: Fujitsu Ltd

Inventor： KISHI YUTAKA ,  YAMAZAKI SUSUMU

IPC: H01L31/107 ,  H01L31/103

CPC classification number: H01L31/103

Abstract: PURPOSE:To economically obtain the title element of low noise and high quality by a method wherein the photo receiving part of reverse conductivity type at high concentration, an inclined region of reverse conductivity type, and a guard ring part are previously formed on an InP layer on the substrate; thereafter, a one-conduction type InP layer of low concentration is formed in the region except the photo receiving part by Be ion implantation. CONSTITUTION:An N-InP layer 12 as the buffer layer, N-InGaAs layer 13, N-InGaAsP layer 14, and N-Inp layer 15 are laminated on a (111) A InP substrate 11 by liquid phase growth. A P Inp layer 16 is formed by CD diffusion to the layer 15, and an inclined junction 17 is formed by Be implantation to the guard ring region of the layer 15. Be is implanted to the periphery 17 of the layer 15, and a guard ring 18 of low concentration N-InP layer is formed by heat treatment. This manner yields excellent guard ring effect.

Abstract translation: 目的：为了经济地获得低噪声和高质量的标题要素，其中预先在InP层上形成高浓度的反向导电类型的光接收部分，反向导电类型的倾斜区域和保护环部分 在基材上 此后，通过Be离子注入在除了光接收部分之外的区域中形成低浓度的单导电InP层。 构成：通过液相生长层叠在（111）A InP衬底11上作为缓冲层的N-InP层12，N-InGaAs层13，N-InGaAsP层14和N-Inp层15。 AP +通过CD扩散到层15而形成Inp层16，并且通过Be注入到层15的保护环区域形成倾斜结17.将Be植入层15的周边17，并且 通过热处理形成低浓度N-InP层的保护环18。 这种方式产生优异的防护环效果。

公开(公告)号：JPS61113287A

公开(公告)日：1986-05-31

申请号：JP23619484

申请日：1984-11-08

Applicant: Sharp Corp

Inventor： KUBO MASARU ,  YAMAMOTO YOSHITAKA

IPC: H01L31/10 ,  H01L31/103

CPC classification number: H01L31/103

Abstract: PURPOSE:To improve the spectral sensitivity characteristics of a photo detecting element, by forming the defect region in the inner part of a substrate and the non-defect region near the surface of the substrate and by forming the P-N junction in the non-defect region whose thickness is suitable adjusted to shorten the life time of the carrier. CONSTITUTION:The defect region 3 containing a lot of fine defects and the non-defect region 4 containing no defects are formed in the N-type layer 2 formed near the surface of a P-type Si substrate 1. The life time of the carrier is so short in the defect layer 3 that the sensitivity to the infrared ray can be decreased in the deep region of the substrare. Combination of this photodiode and the cut off filter of infrared ray is able to remarkably decrease the sensitivity in the infrared region. As the vicinity of the P-N junction of this photodiode is the non-defect region, the leak current is reduced. The photodiode or phototransistor having various spectral sensitivity can be obtained by varying the position of the boundary between the defect region and the non-defect region and the depth of the P-N junction.

Abstract translation: 目的：为了提高光电检测元件的光谱灵敏度特性，通过在衬底的内部部分和衬底表面附近的非缺陷区域形成缺陷区域，并通过在非缺陷区域形成PN结 其厚度适合调整以缩短载体的寿命。 构成：在P型Si衬底1的表面附近形成的N型层2中形成有含有大量缺陷的缺陷区域3和不含有缺陷的非缺陷区域4.载体的寿命 在缺陷层3中如此短，使得在基底的深部区域可以降低对红外线的敏感度。 该光电二极管与红外线截止滤波器的组合能够显着降低红外区域的灵敏度。 由于该光电二极管的P-N结附近是非缺陷区域，所以漏电流减小。 可以通过改变缺陷区域和非缺陷区域之间的边界的位置以及P-N结的深度来获得具有各种光谱灵敏度的光电二极管或光电晶体管。

公开(公告)号：JPS61112386A

公开(公告)日：1986-05-30

申请号：JP23316084

申请日：1984-11-07

Applicant: Hitachi Ltd

Inventor： FUJIWARA ICHIRO ,  MATSUDA HIROSHI ,  ITO KAZUHIRO ,  OUCHI HIROBUMI

IPC: H01L31/10 ,  H01L21/314 ,  H01L31/0216 ,  H01L31/103

CPC classification number: H01L31/02161 ,  H01L31/1035

Abstract: PURPOSE:To obtain a highly reliable semiconductor light receiving element, which sufficiently withstands a high temperature again test, by adopting a three-layer structure of SiNx, PSG and SiO2 as a passivation film of the light receiving element. CONSTITUTION:On an N type InP substrate 1, an N type InP layer 2, an N type InGaAsP layer 3, an N type InP layer 4 and N type InGaAsP layer 5 are grown as crystals. Then, Zn is diffused in the N type InP layer 3. After a P type InP layer 6 is formed, passivation is performed. Then, an N type electrode 9 comprising AuGeNi/Pd/Au and a P type electrode 8 comprising Ti/Pt/Au are formed. A passivation film 7 has a three-layer structure as follows: the first layer is silicon nitride 11 using plasma CVD; the second layer is PSG12 by thermal CVD; and the third layer is SiO2 13 by thermal CVD.

Abstract translation: 目的：通过采用SiNx，PSG和SiO2三层结构作为光接收元件的钝化膜，获得充分耐受高温再次测试的高度可靠的半导体光接收元件。 构成：在N型InP衬底1上，生长N型InP层2，N型InGaAsP层3，N型InP层4和N型InGaAsP层5。 然后，Zn在N型InP层3中扩散。在形成P型InP层6之后，进行钝化。 然后，形成包含AuGeNi / Pd / Au的N型电极9和包含Ti / Pt / Au的P型电极8。 钝化膜7具有如下三层结构：第一层是使用等离子体CVD的氮化硅11; 第二层是通过热CVD的PSG12; 第三层是通过热CVD的SiO 2。

公开(公告)号：JPS6130071A

公开(公告)日：1986-02-12

申请号：JP15227484

申请日：1984-07-23

Applicant: Nec Corp

Inventor： KANEKO SETSUO

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/103 ,  H01L31/108 ,  H01L31/109 ,  H04N1/028

CPC classification number: H01L27/14643 ,  H01L31/103 ,  H01L31/109

Abstract: PURPOSE:To control the increase of a dark current caused by a plasma damage by forming a P type amorphous semiconductor layer between a photosensitive layer of a base substance of an amorphous Si and an electrodes including a transparent conductive layer. CONSTITUTION:As a P type amorphous semiconductor layer 4 is formed between a transparent conductive layer 5 and an amorphous Si 3 as a photosensitive layer, the light goes through the layer 5. In this part, a P-I junction is formed in case of the P type amorphous Si in the layer 4 or a heterojunction is formed in case of the P type amorphous Si carbon in the layer 4. Consequently the junction is formed without any bad influence of the plasma damage in forming the transparent conductive layer because of using no Shottky contact formed on the interface between the amorphous Si and the transparent conductive layer.

Abstract translation: 目的：通过在非晶Si的基体的感光层和包括透明导电层的电极之间形成P型非晶半导体层来控制由等离子体损伤引起的暗电流的增加。 构成：由于在透明导电层5和作为感光层的非晶Si 3之间形成P型非晶半导体层4，所以光通过层5.在该部分中，在P 在层4中形成非晶态的Si或异质结，因为在层4中为P型非晶Si碳，所以形成透明导电层时的等离子体损伤的影响不受影响，因为不使用肖特基 形成在非晶硅和透明导电层之间的界面上的接触。

公开(公告)号：JPS60246684A

公开(公告)日：1985-12-06

申请号：JP10280784

申请日：1984-05-22

Applicant: NIPPON KOGAKU KK

Inventor： YONEYAMA JIYUICHI ,  SHIYOUDA MASAHIRO

IPC: H01L31/10 ,  H01L31/0224 ,  H01L31/103

Abstract: PURPOSE:To obtain sensitivity even to short wavelength beams by forming a P type (or an N type) semiconductor layer through an epitaxial growth method. CONSTITUTION:A P type Si semiconductor layer 2 containing B as a P type impurity is shaped onto an N type Si substrate 1 containing As or Sb as an N type impurity through an epitaxial growth method. A depletion layer is formed on the P type semicondutor layer 2 side while using a P-N junction surface as a boundary at that time. The surface of the P type semiconductor layer 2 is oxidized to shape an SiO2 insulating layer 4. The P type semiconductor layer 2 is exposed, the N type impurity is diffused to the exposed section to change the P type semiconductor layer 2 into an N type semicondutor, and the N type semiconductor is converted into an SiO2 insulating layer through second oxidation. The central section of the P type semiconductor layer 2 is exposed, and a thin SiO2 protective layer 5 is shaped onto the surface of the central section through third oxidation. One part of the N type semiconductor layer 1 and one part of the P type semicondutor layer 2 are respectively exposed and Al layers 6 are formed, and the Al layers 6 unnecessary sections are removed to shape leading-out electrodes. Lastly, external wirings 7 are bonded with the leading-out electrodes, and sealed.

公开(公告)号：JPS60196979A

公开(公告)日：1985-10-05

申请号：JP5370284

申请日：1984-03-21

Applicant: Nec Corp

Inventor： TAGUCHI KENSHIN ,  TORIKAI TOSHITAKA ,  SUGIMOTO YOSHIMASA

IPC: H01L31/107 ,  H01L31/103

CPC classification number: H01L31/1035

Abstract: PURPOSE:To improve breakdown characteristics, etc., and to ensure excellent reliability by interrupting a P-N periphery close to a graded type junction by another graded type junction or a P-N junction which can be approximated by the graded type junction. CONSTITUTION:An N InP layer 12 is formed on a substrate 11 and an N type InGaAs layer 13 and an N type InGaAsP layer 14 are shaped, and an N type InP layer 15 and an N type InP layer 16 are formed. An SiO2 or Si3N4 film is shaped on the surface of a wafer, and P-InP regions 17 are formed. Be atoms are implanted to a concentric region, and P type InP regions 19 and P-N junctions 20 close to a graded type junction are obtained. Likewise, a P InP region 21, a P -N junction 22, an Si3N4 film 23, regions 24 and electrode materials 25 are acquired. According to the constitution, uniform breakdown characteristics determined by reverse characteristics are obtained.

Abstract translation: 目的：改善击穿特性等，并通过中断接近渐变型结的P-N外围的另一个渐变型结或可通过渐变型接点近似的P-N结确保出色的可靠性。 构成：在衬底11上形成N + InP层12，并且形成N型InGaAs层13和N型InGaAsP层14，并且形成N型InP层15和N型InP层16。 在晶片的表面上形成SiO 2或Si 3 N 4膜，形成P-InP区17。 将原子植入同心区域，并获得靠近梯度型结的P型InP区域19和P-N结20。 同样地，获得P + + InP区域21，P + N结22，Si 3 N 4膜23，区域24和电极材料25。 根据该结构，得到由反向特性确定的均匀击穿特性。

公开(公告)号：JPS60163471A

公开(公告)日：1985-08-26

申请号：JP1772784

申请日：1984-02-03

Applicant: NIPPON ELECTRIC CO

Inventor： ISHIHARA HISAHIRO

IPC: H01L31/10 ,  H01L31/0224 ,  H01L31/103

Abstract: PURPOSE:To enhance the reliability by more stable formation of a Ti/Pt/Au series electrode by a method wherein a bonding pad is formed on an InGaAs layer of reverse conductivity type exposed by selective removal of a part of an InP window layer of reverse conductivity type. CONSTITUTION:An N type InP buffer layer 2, an N type InGaAs photo absorption layer 3, and an N type InP window layer 4 are successively formed by lamination on an N type InP substrate 1, and a P type region 5 reaching the photo absorption layer 3 from the surface of the window layer 4 is formed. Next, the surface of the InGaAs layer 3 is exposed by selectively removing a part of the window layer 4 by etching. Thereafter, the bonding pad 7 made up of a Ti/Pt/ Au series electrode is formed at the region of P diffusion in the exposed InGaAs layer in the same manner as conventional. In this case, TiAs and PtAs2 which are stable intermetallic compounds are formed by interface reaction, which inhibit Ga out diffusion. Since the interfaces of them are stable up to -500 deg.C, the enhancement of the reliability of the Ti/Pt/Au series electrode is enabled.

公开(公告)号：JPS60163470A

公开(公告)日：1985-08-26

申请号：JP1772684

申请日：1984-02-03

Applicant: NIPPON ELECTRIC CO

Inventor： SUGIMOTO YOSHIMASA

IPC: H01L31/10 ,  H01L31/0232 ,  H01L31/103

Abstract: PURPOSE:To effectively operate the titled element as a large-aperture photo diode of low dark-current and low capacitance by a method wherein this element is formed into a plano-convex lens where the surface of a one conductivity type semiconductor layer is the light receiving plane, and said surface forms a convex curved plane, and the surface on the side of a reverse conductivity type semiconductor layer forms a plane. CONSTITUTION:The titled element equipped with the one conductivity type semiconductor layer made by successive formation of an N type buffer layer 12, an N type InGaAs photo absorption layer 13, and an N type InP cap layer 14 on an N type InP substrate 11, and with a P region 15 as the reverse conductivity type layer in the one conductivity type semiconductor layer is formed into a plano-convex lens where the surface of the InP substrate 11 is the light receiving plane, and this light receiving plane forms a convex curved plane, and the surface on the side of the P region 15 forms a plane. The numeral 16 represents a surface protection film, 17 the P-side electrode, 18 the N-side electrode, and 19 a reflection-preventing film.

公开(公告)号：JPS60130871A

公开(公告)日：1985-07-12

申请号：JP24124283

申请日：1983-12-19

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： SHIBA TETSUO ,  TAKAHASHI KAZUHISA ,  IKEDA KENJI

IPC: H01L31/10 ,  H01L31/0216 ,  H01L31/103

Abstract: PURPOSE:To reduce dark currents by using a ZnS layer as a surface protective film. CONSTITUTION:A ZnS layer is used as a surface protective film for an InGaAs photodetector, which has a p-n junction consisting of InGaAs and to which beams to be detected are projected from the surface protective film side. Films such as selective diffusion films 7 are formed on a substrate such as an n type InP substrate 2 and a layer such as an n type InGaAs layer 3. A p type InGaAs diffusion layer 4 is shaped through diffusion, the selective diffusion films 7 are removed, and ZnS layers 8 as surface protective films and an n-side electrode 1 and P-side electrodes 6 are formed newly.