公开(公告)号：JP4613271B2

公开(公告)日：2011-01-12

申请号：JP2000053809

申请日：2000-02-29

Applicant: シャープ株式会社

Inventor： 良弘 和泉 ,  敏 川島 ,  貴治 橋本 ,  義雅 近間

IPC: G02F1/1343 ,  H01L29/786 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/49 ,  H05K3/24

CPC classification number: H01L29/4908 ,  G02F2001/136295 ,  H01L2924/0002 ,  H05K3/24 ,  H05K2201/0326 ,  H01L2924/00

Abstract: There is provided is a metal line structure in which no defect of blistering occurs on a surface of a Cu/Ni film or a Cu/Au/Ni film even if an Ni plating thickness is reduced. According to this metal line 1, in a Cu/Au/Ni film structure in which an Au film 13 and a Cu film 15 are successively laminated by electroless plating on an Ni film 12 formed by electroless plating, the Ni film 12 has a phosphorus content x of 10 wt %