Nitriding treatment method
    3.
    发明专利

    公开(公告)号:JP5300283B2

    公开(公告)日:2013-09-25

    申请号:JP2008046171

    申请日:2008-02-27

    Abstract: PROBLEM TO BE SOLVED: To provide a nitridation method (a method for nitriding a material) having low environmental loads and high efficiency. SOLUTION: The nitridation method comprises a step of irradiating a material (a glass substrate 30 having a TiO 2 film 32 on the surface thereof) with an atmospheric-pressure plasma jet 2 generated by using a gaseous raw material 40 containing nitrogen at the least. Nitrogen molecules are not only ionized but also efficiently dissociated to produce nitrogen atoms of high concentration by a high-voltage pulse discharge inside the atmospheric-pressure plasma jet 2. When the surface of the material is irradiated with the atmospheric-pressure plasma jet 2 generated by using the gaseous raw material 40 (even air can be used) containing nitrogen at the least, the surface of the material is nitrided in a short period of time by nitrogen atoms of high concentration contained in a plasma flame. COPYRIGHT: (C)2009,JPO&INPIT

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