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公开(公告)号：JP5187988B2
公开(公告)日：2013-04-24
申请号：JP2000236213
申请日：2000-08-03
申请人： ルネサスエレクトロニクス株式会社
发明人： 智一 松崎
IPC分类号： H01L21/316 , H01L21/76 , H01L21/32 , H01L21/762
CPC分类号： H01L21/76221 , H01L21/31662 , H01L21/32
摘要： A first field oxidation is performed by masking an element-isolating region formation-expected region on a substrate by a first oxidation preventing film (silicon nitride film) having therein a first opening to thereby form a first field oxide film, which is then masked by a second oxidation preventing film (silicon nitride film) having a second opening with a smaller width dimension than the first opening in a second field oxidation to thereby locally form a second field oxide film at the middle of the first field oxide film.
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公开(公告)号：JP5341698B2
公开(公告)日：2013-11-13
申请号：JP2009222330
申请日：2009-09-28
申请人： ルネサスエレクトロニクス株式会社
IPC分类号： H03K19/0175 , H03K19/003
CPC分类号： H03B5/32 , H03B5/36 , H03B2200/003 , H03B2200/006 , H03B2200/0062
摘要： A semiconductor device according to an exemplary aspect of the invention is capable of being selectively switched between an oscillation circuit and a signal input-output circuit, and includes first and second external connecting terminals that are connectable to an oscillation device; an inverting amplifier an input side of which is electrically connected to the first external connecting terminal through a coupling capacitor and an output side of which is electrically connected to the second external connecting terminal; a feedback resistor connected to the input side and the output side of the inverting amplifier; a bias stabilization circuit that stabilizes a bias applied to the coupling capacitor; a first signal input-output portion connected to the first external connecting terminal; and a second signal input-output portion connected to the second external connecting terminal.
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