Pattern evaluation method and apparatus

    公开(公告)号:JP5497368B2

    公开(公告)日:2014-05-21

    申请号:JP2009187259

    申请日:2009-08-12

    Abstract: PROBLEM TO BE SOLVED: To provide a method for performing evaluation and abnormality detection of a fine pattern formed on a semiconductor wafer and an aligner which exposes the pattern. SOLUTION: In a method and equipment for evaluating a pattern, which evaluate a hole pattern, on the basis of electrons detected by electron beam scanning to the hole pattern formed on a substrate, a ratio of the major axis to the minor axis of the hole pattern is obtained on the basis of the detected electrons. Features, ellipticity or the area of the circular shape of the hole pattern is obtained, on the basis of the detected electrons, and information on the characteristics, the ellipticity or the area of the circular shape is displayed for every chip on the substrate or by each shot of a projection aligner. COPYRIGHT: (C)2010,JPO&INPIT

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