Millimeter and far-infrared light detector
    2.
    发明专利
    Millimeter and far-infrared light detector 有权
    空值

    公开(公告)号:JP4029420B2

    公开(公告)日:2008-01-09

    申请号:JP33419699

    申请日:1999-11-25

    Abstract: An MR/FIR light detector is disclosed herein that has extraordinarily high degree of sensitivity and a high speed of response. The detector includes an MR/FIR light introducing section (1) for guiding an incident MR/FIR light (2), a semiconductor substrate (14) formed with a single-electron transistor (14) for controlling electric current passing through a semiconductor quantum dot (12) formed therein, and a BOTAI antenna (6, 6a, 6b, 6c) for concentrating the MW/FIR light (2) into a small special zone of sub-micron size occupied by the semiconductor quantum dot (12) in the single-electron transistor (14). The quantum dot (12) forming a two-dimensional electron system absorbs the electromagnetic wave concentrated efficiently, and retains an excitation state created therein for 10 nanoseconds or more, thus permitting electrons of as many as one millions in number or more to be transferred with respect to a single photon absorbed.

    Abstract translation: 本文公开了具有非常高的灵敏度和高响应速度的MR / FIR光检测器。 检测器包括用于引导入射MR / FIR光(2)的MR / FIR光导入部(1),形成有用于控制通过半导体量子的电流的单电子晶体管(14)的半导体衬底(14) 形成在其中的点(12)和用于将MW / FIR光(2)聚集成由半导体量子点(12)占据的亚微米尺寸的小特殊区域的BOTAI天线(6,6a,6b,6c) 单电子晶体管(14)。 形成二维电子系统的量子点(12)吸收有效集中的电磁波,并且将其中产生的激发态保持10纳秒以上,从而允许多达一百万数以上的电子与 尊重单个光子吸收。

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