公开(公告)号：JP2011225421A

公开(公告)日：2011-11-10

申请号：JP2010286949

申请日：2010-12-24

Applicant: Air Water Inc ,  エア・ウォーター株式会社

Inventor： ASAMURA HIDETOSHI ,  KAWAMURA KEISUKE ,  OBARA SATOSHI

IPC: C30B29/36 ,  C30B25/20 ,  H01L21/20 ,  H01L21/205

CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B29/36 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/02494 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/02661 ,  Y10T428/24355

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a single-crystal 3C-SiC substrate with which it is possible to greatly reduce surface defects generated during epitaxial growth process and thereby simplify subsequent steps while ensuring quality as a semiconductor device.SOLUTION: There is provided the method for producing the single-crystal 3C-SiC substrate to form a single-crystal 3C-SiC layer on a base substrate by epitaxial growth. The method includes a first growth step in which the single-crystal 3C-SiC layer is formed so as to have a very flat surface state in which surface pits are scattered, and a second growth step in which the single-crystal 3C-SiC layer obtained by the first growth step is further subjected to epitaxial growth such that the surface pits in the surface are buried in a region where desorption is rate-limited.

Abstract translation: 要解决的问题：提供一种用于制造单晶3C-SiC衬底的方法，其可以大大减少在外延生长工艺期间产生的表面缺陷，从而简化随后的步骤，同时确保作为半导体器件的质量。 解决方案：提供了通过外延生长在基底基板上制造单晶3C-SiC衬底以形成单晶3C-SiC层的方法。 该方法包括第一生长步骤，其中形成单晶3C-SiC层以具有表面凹坑散布的非常平坦的表面状态;以及第二生长步骤，其中单晶3C-SiC层 通过第一生长步骤获得的表面进一步进行外延生长，使得表面中的表面凹坑被掩埋在解吸速率限制的区域中。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009302097A

公开(公告)日：2009-12-24

申请号：JP2008151433

申请日：2008-06-10

Applicant: Air Water Inc ,  Osaka Prefecture Univ ,  エア・ウォーター株式会社 ,  公立大学法人大阪府立大学

Inventor： KAWAMURA KEISUKE ,  IZUMI KATSUTOSHI ,  ASAMURA HIDETOSHI ,  YOKOYAMA TAKASHI

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/76 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a single crystal SiC substrate, capable of obtaining an SiC layer having good crystallinity by uniforming an interface between an SiC layer and an embedded insulation layer such as SiO
2 , at low cost and with excellent productivity.
SOLUTION: The method of manufacturing the single crystal SiC substrate has the steps of preparing an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulation layer 4, and heating the Si substrate 1 in a carbon-based gas atmosphere to modify the surface Si layer 3 into a single crystal SiC layer 6, wherein an Si layer in the vicinity of the interface 8 with the embedded insulation layer 4 is left as a residual Si layer 5 in modifying the surface Si layer 3 into the single crystal SiC layer 6.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造单晶SiC衬底的方法，其能够通过使SiC层和诸如SiO 2的嵌入绝缘层之间的界面均匀化来获得具有良好结晶度的SiC层， / SB>，成本低，生产效率高。 解决方案：制造单晶SiC衬底的方法具有以下步骤：制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1，并且将Si衬底1加热到碳 - 将表面Si层3改性为单晶SiC层6，其中在界面8附近与嵌入绝缘层4的Si层作为残留Si层5而被修饰，表面Si层3 进入单晶SiC层6。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2005089255A

公开(公告)日：2005-04-07

申请号：JP2003325598

申请日：2003-09-18

Applicant: Air Water Inc ,  エア・ウォーター株式会社

Inventor： MATSUDA HIDEAKI ,  HAYAKAWA KEIICHI ,  INUI SATOYUKI ,  ASAMURA HIDETOSHI

IPC: C01B3/40 ,  H01M8/06

CPC classification number: Y02E60/50

Abstract: PROBLEM TO BE SOLVED: To provide a hydrogen generator excellent in a maintainability and a thermal efficiency and capable of preventing poisoning of a catalyst in its starting or the like. SOLUTION: The hydrogen generator is for generating a hydrogen-rich reformed gas by reforming a hydrocarbon-based raw gas containing a sulfur compound. By equipping it with an ordinary temperature desulfurization region 1 where the sulfur compound in the raw gas is removed by a physical adsorption, a reforming hydrogenation region 3 where the raw gas is contacted with a catalyst at a downstream of the ordinary temperature desulfurization region 1 to be reformed by a catalytic reaction into a reformed gas, and a hydrogenating desulfurization region 4 where the sulfur compound is hydrogenated and desulfurized from the reformed gas at a downstream of the reforming hydrogenation region 3, poisoning of the catalyst in starting is prevented. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在可维护性和热效率方面优异并且能够防止其起始等中的催化剂中毒的氢发生器。 解决方案：氢发生器用于通过重整含有硫化合物的烃基原料气体来产生富氢重整气体。 通过装备通过物理吸附除去原料气体中的硫化合物的常温脱硫区域1，将原料气体与常温脱硫区域1的下游的催化剂接触的重整氢化区域3， 通过催化反应重整成重整气体，在重整氢化区域3的下游将硫化合物从重整气体中氢化脱硫的氢化脱硫区域4，防止了起动时催化剂的中毒。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2014076925A

公开(公告)日：2014-05-01

申请号：JP2012226469

申请日：2012-10-12

Applicant: Air Water Inc ,  エア・ウォーター株式会社 ,  Mie Univ ,  国立大学法人三重大学

Inventor： OKU HIDEHIKO ,  KAWAMURA KEISUKE ,  ASAMURA HIDETOSHI ,  FUKAZAWA AKIRA ,  OUCHI SUMITO ,  MIYAKE HIDETO ,  HIRAMATSU KAZUMASA

IPC: C30B29/38 ,  C23C16/34 ,  C30B25/18 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor substrate which reduces the defect density in a GaN thin film and inexpensively provides a large-diameter substrate.SOLUTION: A method of producing a semiconductor substrate includes a step of: preparing an Si substrate formed, on the surface, with an SiC single crystal thin film of a film thickness of 2 nm or greater and 3.5 μm or smaller and heating the Si substrate formed with the SiC single crystal thin film to a specified growth temperature to form a buffer layer composed of at least two ingredients selected from Al, In, Ga and N; forming, on the buffer layer, three-dimensional nuclei of GaN crystals in a specified density at a temperature lower than the growth temperature of the buffer layer; and growing the three-dimensional nuclei of GaN crystals in the lateral direction at a temperature lower than the growth temperature of the buffer layer to form a continuous GaN single crystal film. The buffer layer has a film thickness of smaller than 15 nm and a composition of AlInGaN (0.05≤x≤1,0≤y≤0.5,x+y≤1).

Abstract translation: 要解决的问题：提供一种制造半导体衬底的方法，其减小GaN薄膜中的缺陷密度并且廉价地提供大直径衬底。解决方案：一种制造半导体衬底的方法包括以下步骤：制备Si 在表面上形成膜厚度为2nm以上且3.5μm以下的SiC单晶薄膜，将由SiC单晶薄膜形成的Si衬底加热至规定的生长温度，形成缓冲层 由至少两种选自Al，In，Ga和N的成分组成的层; 在比缓冲层的生长温度低的温度下以规定的密度在缓冲层上形成GaN晶体的三维核; 并在低于缓冲层的生长温度的温度下在横向上生长GaN晶体的三维核，以形成连续的GaN单晶膜。 缓冲层的膜厚小于15nm，AlInGaN（0.05≤x≤1,0≤y≤0.5，x +y≤1）的组成。

公开(公告)号：JP2009302098A

公开(公告)日：2009-12-24

申请号：JP2008151434

申请日：2008-06-10

Applicant: Air Water Inc ,  Osaka Prefecture Univ ,  エア・ウォーター株式会社 ,  公立大学法人大阪府立大学

Inventor： KAWAMURA KEISUKE ,  IZUMI KATSUTOSHI ,  ASAMURA HIDETOSHI ,  YOKOYAMA TAKASHI

IPC: H01L21/20 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitrogen compound semiconductor substrate, capable of obtaining a nitrogen compound semiconductor substrate having good crystallinity at low cost and with excellent productivity.
SOLUTION: The method of manufacturing the nitrogen compound semiconductor substrate includes: a step of preparing an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulation layer 4; a step of heating the Si substrate 1 in a carbon-based gas atmosphere to modify the surface Si layer 3 into a single crystal SiC layer 6 while leaving an Si layer in the vicinity of the interface 8 with the embedded insulation layer 4 as a residual Si layer 5; and a step of further epitaxially growing the nitrogen compound semiconductor layer 15 for the single crystal SiC layer on the surface.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供一种制造氮化合物半导体衬底的方法，其能够以低成本和优异的生产率获得具有良好结晶度的氮化合物半导体衬底。 解决方案：制备氮化合物半导体衬底的方法包括：制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1的步骤; 在碳基气体气氛中加热Si衬底1的步骤，将表面Si层3修改为单晶SiC层6，同时在嵌入绝缘层4作为残留物的界面8附近留下Si层 Si层5; 以及进一步外延生长表面上的单晶SiC层的氮化合物半导体层15的步骤。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2013179121A

公开(公告)日：2013-09-09

申请号：JP2012041178

申请日：2012-02-28

Applicant: Air Water Inc ,  エア・ウォーター株式会社 ,  Mie Univ ,  国立大学法人三重大学

Inventor： ASAMURA HIDETOSHI ,  KAWAMURA KEISUKE ,  OKU HIDEHIKO ,  FUKAZAWA AKIRA ,  MIYAKE HIDETO ,  HIRAMATSU KAZUMASA

IPC: H01L21/20

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate, capable of improving throughput per unit time while reducing dislocation density.SOLUTION: In a method for manufacturing a semiconductor substrate, a GaN layer is deposited at a predetermined GaN deposition temperature on a base substrate in which monocrystalline SiC is present at least in the outermost surface layer. In the method for manufacturing a semiconductor substrate, a first step of depositing GaN at a GaN deposition temperature after depositing an AlInGaN (0

Abstract translation: 要解决的问题：提供一种半导体衬底的制造方法，其能够在降低位错密度的同时提高单位时间的生产量。解决方案：在半导体衬底的制造方法中，以预定的GaN沉积温度沉积GaN层 其中单晶SiC至少存在于最外表面层中的基底。 在制造半导体衬底的方法中，在高于所述衬底的温度下沉积AlInGaN（0

公开(公告)号：JP2008037708A

公开(公告)日：2008-02-21

申请号：JP2006215150

申请日：2006-08-08

Applicant: Air Water Inc ,  エア・ウォーター株式会社

Inventor： ASAMURA HIDETOSHI ,  NARITA SATORU ,  YUZAKI KOICHI ,  JO HISANAO

IPC: C01B3/38 ,  C01B3/48 ,  C01B3/54 ,  H01M8/06

CPC classification number: Y02E60/50

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus for generating hydrogen where starting time can be shortened by rapid temperature rising in an initial stage and where CO concentration can be sufficiently lowered. SOLUTION: The apparatus for generating hydrogen where a hydrogen-rich reformed gas is produced by reforming a hydrocarbon-based gas comprises a reforming portion 1 where the inner combustion and the reforming reaction of a hydrocarbon gas are performed by bringing the hydrocarbon-based gas together with an oxidation gas and steam into a catalytic reaction with a catalyst, a CO modifying portion 2 to reduce CO in the reformed gas obtained at the reforming portion 1 by CO conversion to hydrogen, a CO selective oxidation portion 3 to reduce residual CO in the reformed gas discharged from the CO modifying portion 2 by oxidation and a first heat exchanger 11 to cool heat generated by a CO selective oxidation reaction at the CO selective oxidation portion 3 with the oxidation gas. The oxidation gas heated in the first heat exchanger 11 is introduced into the reforming portion 1 as the oxidation gas for inner combustion at the reforming portion 1. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于产生氢的装置，其中可以通过初始阶段的快速升温并且可以充分降低CO浓度来缩短开始时间。 解决方案：通过重整烃类气体制备富氢重整气产生氢气的装置包括重整部分1，其中烃气体的内燃和重整反应是通过使烃 - 将氧化气体和蒸汽与催化剂催化反应，CO改性部分2，以通过CO转化成氢气将在重整部分1获得的重整气体中的CO减少，CO选择氧化部分3以减少残余物 通过氧化从CO改性部分2排出的重整气体中的CO和第一热交换器11，以通过氧化气体在CO选择氧化部分3处冷却由CO选择性氧化反应产生的热。 在第一热交换器11中加热的氧化气体作为重整部分1的内燃氧化气体被引入重整部分1中。（C）2008，JPO＆INPIT