Magnesium oxide film, forming method thereof, and plasma generation electrode
    1.
    发明专利
    Magnesium oxide film, forming method thereof, and plasma generation electrode 审中-公开
    氧化镁膜,其形成方法和等离子体生成电极

    公开(公告)号:JP2011054281A

    公开(公告)日:2011-03-17

    申请号:JP2009199128

    申请日:2009-08-31

    Abstract: PROBLEM TO BE SOLVED: To provide a magnesium oxide film capable of making discharge starting voltage of an electrode low in case of use as an electrode protection film, and of reduced manufacturing cost.
    SOLUTION: The magnesium oxide film 1 is provided with a magnesium oxide thin film part 4 and a whisker 5 growing from the surface of and integrated with the magnesium oxide thin film part 4. The magnesium oxide film 1 is made by forming the magnesium oxide thin film part 4 on the surface of a base material 2 by the chemical gas phase deposition method (the CVD method) under an open atmosphere, and growing the whisker 5 from the surface and being formed in a body with the magnesium oxide thin film part 4. A plasma generation electrode using the magnesium oxide film 1 as an electrode protection film has a discharge starting voltage lowered by 30% or more as compared with a conventional one.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种在用作电极保护膜的情况下能够使电极的放电起始电压低的氧化镁膜,并且降低制造成本。 解决方案:氧化镁膜1设置有从氧化镁薄膜部分4的表面并与其一体生长的氧化镁薄膜部分4和晶须5。氧化镁膜1通过形成 通过化学气相沉积法(CVD法)在开放气氛下在基材2的表面上形成氧化镁薄膜部分4,并且从表面生长晶须5并在氧化镁薄片上形成体 使用氧化镁膜1作为电极保护膜的等离子体产生电极的放电开始电压与以往相比降低了30%以上。 版权所有(C)2011,JPO&INPIT

    Film deposition method of magnesium oxide film
    2.
    发明专利
    Film deposition method of magnesium oxide film 审中-公开
    氧化镁膜的膜沉积方法

    公开(公告)号:JP2008266682A

    公开(公告)日:2008-11-06

    申请号:JP2007108187

    申请日:2007-04-17

    Abstract: PROBLEM TO BE SOLVED: To provide a film deposition method of a magnesium oxide film capable of easily depositing a uniform magnesium oxide film.
    SOLUTION: A magnesium oxide film is deposited on a surface of a base material A by generating discharge plasma under the pressure near the atmospheric pressure by using a specified mixed gas containing the components (A) to (C): (A) an organic magnesium compound; (B) at least one of oxygen and steam; (C) at least one to be selected from a group consisting of helium, neon, argon, krypton, xenon and nitrogen, and by using the chemical vapor deposition method using the discharge plasma.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够容易地沉积均匀的氧化镁膜的氧化镁膜的成膜方法。 解决方案:通过使用包含组分(A)至(C)的特定混合气体,在大气压附近的压力下产生放电等离子体,在基材A的表面上沉积氧化镁膜:(A) 有机镁化合物; (B)氧和蒸汽中的至少一种; (C)选自由氦,氖,氩,氪,氙和氮组成的组中的至少一种,并且使用使用放电等离子体的化学气相沉积法。 版权所有(C)2009,JPO&INPIT

    Magnesium oxide film, forming method thereof, and plasma generation electrode
    3.
    发明专利
    Magnesium oxide film, forming method thereof, and plasma generation electrode 有权
    氧化镁膜,其形成方法和等离子体生成电极

    公开(公告)号:JP2011054280A

    公开(公告)日:2011-03-17

    申请号:JP2009199127

    申请日:2009-08-31

    Abstract: PROBLEM TO BE SOLVED: To provide a magnesium oxide film capable of making discharge starting voltage of an electrode low in case of use as an electrode protection film, and of reduced manufacturing cost. SOLUTION: The magnesium oxide film 1 is provided with an aggregate 6 of a magnesium oxide thin film part 4 and magnesium oxide plate crystal 5 growing from the surface of and integrated with the magnesium oxide thin film part 4. The magnesium oxide film 1 is formed by growing magnesium oxide plate crystal 5 on the surface of the magnesium oxide thin film part 4 by the chemical gas phase deposition method (the CVD method) under an open atmosphere, on the surface of a base layer 3 formed by coating magnesium compound solution generating magnesium oxide by thermal decomposition on a surface of a base material 2 and heat-treating it. A plasma generation electrode using the magnesium oxide film 1 as an electrode protection film has a discharge starting voltage lowered by 30% or more as compared with a conventional one. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种在用作电极保护膜的情况下能够使电极的放电起始电压低的氧化镁膜,并且降低制造成本。 解决方案:氧化镁膜1设置有从氧化镁薄膜部分4的表面并与其一体化的氧化镁薄膜部分4和氧化镁板晶体5的聚集体6。氧化镁膜 1是通过在开放气氛下通过化学气相沉积法(CVD法)在氧化镁薄膜部分4的表面上生长氧化镁板晶体5而形成的,在通过涂覆镁形成的基底层3的表面上 在基材2的表面上通过热分解产生氧化镁的复合溶液并进行热处理。 使用氧化镁膜1作为电极保护膜的等离子体产生电极与现有的电极相比,放电开始电压降低30%以上。 版权所有(C)2011,JPO&INPIT

    Film forming method of magnesium oxide film, and method of manufacturing plasma generation electrode
    4.
    发明专利
    Film forming method of magnesium oxide film, and method of manufacturing plasma generation electrode 有权
    氧化镁膜的成膜方法及制造等离子体生成电极的方法

    公开(公告)号:JP2011246736A

    公开(公告)日:2011-12-08

    申请号:JP2010118045

    申请日:2010-05-24

    Abstract: PROBLEM TO BE SOLVED: To easily and efficiently form a magnesium oxide film with excellent transparency without using an expensive device.SOLUTION: A raw material aqueous solution is prepared wherein 10g of magnesium acetate tetrahydrate is dissolved in 190g of water, and 2g of ethylene glycol is added. The raw material aqueous solution is put in an atomization container 21 of a raw material atomization device 2, and a temperature of a substrate 8 set on a bottom part of a reaction space 61 is increased to 400°C by a heater 7. By operating an ultrasonic vibrator 22, the raw material aqueous solution is atomized, and raw material gas with mist of the raw material aqueous solution carried in air is supplied to the reaction space 61. When the raw material gas flows along a surface of the substrate 8, the magnesium oxide film is formed on the surface of the substrate 8. It is confirmed that transmissivity of the formed film is not degraded even when a thickness increases. In addition, it is confirmed that the same result is obtained even when diethylene glycol is used in stead of the ethylene glycol.

    Abstract translation: 要解决的问题:为了容易且有效地形成具有优异透明性的氧化镁膜,而不使用昂贵的装置。 解决方案:制备其中10g的四水合乙酸镁溶解在190g水中的原料水溶液,加入2g乙二醇。 将原料水溶液放入原料雾化装置2的雾化容器21内,通过加热器7将设置在反应空间61的底部的基板8的温度升高至400℃。通过操作 超声波振动器22将原料水溶液雾化,将原料水溶液的空气中的原料气体送入空气。当原料气体沿着基板8的表面流动时, 氧化镁膜形成在基板8的表面上。即使厚度增加,也可以确认所形成的膜的透射率不降低。 此外,确认即使使用二甘醇代替乙二醇也能得到相同的结果。 版权所有(C)2012,JPO&INPIT

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