公开(公告)号：JP2014025763A

公开(公告)日：2014-02-06

申请号：JP2012165129

申请日：2012-07-25

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： KIN HIDENORI ,  DOI AYUMI ,  HIROI TAKASHI

IPC: G01N21/956 ,  G01N23/225 ,  G06T1/00

Abstract: PROBLEM TO BE SOLVED: To provide a defect inspection method by which an error defect or an undetected defect can be suppressed efficiently.SOLUTION: In a defect inspection method in which while sequentially moving a defect candidate image 300 along an alignment sequence, real ghost processing comparison is performed between first and second reference images 410, 420, which are located at the front and rear of each of a defect candidate image 300 and the defect candidate image so as to detect a defect part 30 in the defect candidate image; when the defect part 30 is detected, difference processing between the first and second reference images is performed so as to generate a reference difference image 700; in accordance with whether or not a pixel of reference difference image is equal to or lower than a stain threshold value of a prescribed gray level difference, it is determined whether or not both of the first and second reference images are a pure reference image 400p without a defect part 40, or whether either of them is a stain reference image 400s having a defect part; and in accordance with a determination result, the reference image is changed from the first and second reference images located each at the front and rear of defect candidate image to a pre-stored pure reference image having no defect part.

Abstract translation: 要解决的问题：提供可以有效地抑制错误缺陷或未检测到的缺陷的缺陷检查方法。解决方案：在沿着对准序列顺序地移动缺陷候选图像300的缺陷检查方法中，实际重影处理 在位于缺陷候选图像300和缺陷候选图像中的每一个的前后的第一和第二参考图像410,420之间进行比较，以便检测缺陷候选图像中的缺陷部分30; 当检测到缺陷部分30时，执行第一和第二参考图像之间的差异处理，以产生参考差异图像700; 根据参考差异图像的像素是否等于或低于规定灰度差的污点阈值，确定第一和第二参考图像两者是否都是纯参考图像400p而没有 缺陷部分40，或者它们是否是具有缺陷部分的污点参考图像400s; 并且根据确定结果，将参考图像从位于缺陷候选图像的前后的第一和第二参考图像改变为没有缺陷部分的预先存储的纯参考图像。

公开(公告)号：JP2014157726A

公开(公告)日：2014-08-28

申请号：JP2013027894

申请日：2013-02-15

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： DOI AYUMI ,  FUNAKOSHI TOMOHIRO ,  YAMAMOTO TAKUMA ,  TAMORI TOMOHIRO ,  SAKAI TSUNEHIRO

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/263 ,  H01J37/241 ,  H01J37/28 ,  H01J2237/225 ,  H01J2237/281

Abstract: PROBLEM TO BE SOLVED: To provide a sample observation device in which there is no variation in human, and measurement conditions can be determined easily.SOLUTION: An image is acquired from a signal obtained by irradiating an observed object including a recess with a charged particle beam, a calculation unit determines the brightness ratio between the recess of an image of the observed object and the periphery of the recess, and then the appropriateness of acceleration voltage of the charged particle beam with which the observed part is irradiated is determined, by using the relation of the brightness ratio between the recess and the periphery thereof for each of a plurality of acceleration voltages in a prestored standard sample, and a value representing the structure of the recess.

Abstract translation: 要解决的问题：提供一种其中不存在变化的样品观察装置，并且可以容易地确定测量条件。解决方案：从通过用带电粒子照射包括凹部的观察对象获得的信号获取图像 计算单元确定观察对象的图像的凹部与凹部的周边之间的亮度比，然后通过使用观察部分被照射的带电粒子束的加速电压的适当性来确定 预先存储的标准样品中的多个加速电压中的每一个的凹部和周边的亮度比的关系以及表示凹部的结构的值。

公开(公告)号：JP2014143031A

公开(公告)日：2014-08-07

申请号：JP2013009725

申请日：2013-01-23

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SAKAI TSUNEHIRO ,  FUNAKOSHI TOMOHIRO ,  TAMORI TOMOHIRO ,  DOI AYUMI

IPC: H01J37/21 ,  H01J37/28 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To solve such a problem that although there is a technique for observing the pattern shapes of the bottom and the lower layer of a hole or a trench by increasing the acceleration voltage, the pattern of a layer of different focal position is detected erroneously because the pattern is seen through down to the lower layer when a sample of multilayer film is observed under high speed conditions, and it may be impossible to focus an object layer, and thereby it is necessary to focus a captured layer stably in the observation of high acceleration voltage.SOLUTION: A focal position on the sample surface is determined under first acceleration voltage conditions, and a focal position under second acceleration voltage conditions higher than the first acceleration voltage conditions is determined by adding a predetermined offset amount to the focal position.

Abstract translation: 要解决的问题为了解决这样的问题，虽然存在通过增加加速电压来观察孔或沟槽的底层和下层的图案形状的技术，但是不同焦点位置的层的图案是 由于在高速条件下观察多层膜的样品时，通过向下看到图案，因此可能会错误地检测到，因此可能不可能聚焦目标层，因此需要将俘获层稳定地聚焦在 观察高加速电压。解决方案：在第一加速电压条件下确定样品表面上的焦点位置，并且通过向焦点添加预定的偏移量来确定在高于第一加速电压条件的第二加速电压条件下的焦点位置 位置。

公开(公告)号：JP2010267766A

公开(公告)日：2010-11-25

申请号：JP2009117376

申请日：2009-05-14

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： DOI AYUMI ,  GOTO YASUNORI

IPC: H01L21/66 ,  G01N23/225

Abstract: PROBLEM TO BE SOLVED: To provide a method and system capable of relatively easily determining inspection conditions in a wafer inspection even for a user having no expertise.
SOLUTION: In this wafer inspection condition determining method and system, an inspection condition data base 115 storing information over images imaged in the past and inspection conditions for these images is provided; an analysis control unit 114 displays a plurality of sample images and inspection conditions for these sample images which are stored in the inspection condition data base 115 in an image processing unit 113; from a plurality of sample images and inspection conditions which are displayed through an input part, predetermined inspection conditions are selected and through the input part, a predetermined region in a wafer is selected; the selected region is imaged by an electron beam wafer inspection apparatus 100 under selected inspection conditions to obtain an obtained image; and the analysis of the obtained image is performed and based on the result of the analysis, an evaluation of the predetermined inspection conditions is performed.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够相对容易地确定晶片检查中的检查条件的方法和系统，即使对于没有专业知识的用户也是如此。 解决方案：在该晶片检查条件确定方法和系统中，提供存储过去成像的图像上的信息的检查条件数据库115和这些图像的检查条件; 分析控制单元114在图像处理单元113中显示存储在检查条件数据库115中的这些样本图像的多个样本图像和检查条件; 从通过输入部显示的多个样本图像和检查条件，选择预定的检查条件，并且通过输入部选择晶片中的预定区域; 在选定的检查条件下，通过电子束晶片检查装置100对所选择的区域进行成像，以获得所获得的图像; 并且执行所获得的图像的分析，并且基于分析结果，执行预定检查条件的评估。 版权所有（C）2011，JPO＆INPIT