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公开(公告)号：JPH08298185A
公开(公告)日：1996-11-12
申请号：JP10384695
申请日：1995-04-27
申请人： NIPPON DENSO CO
发明人： KATO AKIRA , KATAYAMA MASAYUKI , ITO NOBUE , HATTORI TADASHI
摘要： PURPOSE: To decrease dispersing an emission center element so as to highly stabilizer concentration, by using a sintered unit of adding to a material substance of II-IIIb-VIb group compound this IIIb group element and the emission center element, and forming an emitting layer by sputtering. CONSTITUTION: An emitting layer is layered with two electrodes and two insulating layers on a glass substrate, to form an EL element. To a material substance of II-IIIb-VIb group compound, an emission center element and a simple substance or compound of IIIb group element in the material substance are added, to manufacture a sintered unit of density 75% or more monocrystal density of the material substance. This unit is used as a sputtering target to form the emitting layer by sputtering. Selection is respectively made from Ca, Sr, Ba, Zn as a II group element, from Al, Ga, In as a IIIb group element and from S, Se as a VIb group element. Preferably, the material substance is a composition of II-IIIb2 -VIb4 , to use Ga2 S3 or Ga2 O3 as the added IIIb group element compound, and an addition amount thereof is set to 2 to 12mol%.
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公开(公告)号：JPH0878165A
公开(公告)日：1996-03-22
申请号：JP21265394
申请日：1994-09-06
申请人： NIPPON DENSO CO
发明人： INOKUCHI KAZUHIRO , UCHIDA TOMOYA , ITO NOBUE , HATTORI TADASHI
摘要： PURPOSE: To ensure the contrast of a display even when an external light is incident to an indicator in a head up type transparent thin film EL indicator to be mounted on an automobile dashboard, and visually confirm the background through the indicator. CONSTITUTION: A transparent thin film EL indicator is formed by airtightly sealing an EL element 20 in a cavity part 17 enclosed by a front base 11, a spacer 13 and a back plate 15 with silicon oil. Particularly, a colored transparent film 30 is formed on the inner surface of the back plate 15. This colored transparent film 30 limits the transmittance of the light incident from the back surface side of the indicator to 5%-70%, more preferably, 15%-65%. By limiting the transmittance of the light within the above range, the contrast of a display is never lost even when the morning sun or evening sun is incident, and the forward visual confirmability through the indicator is neither lost.
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公开(公告)号：JPH0817575A
公开(公告)日：1996-01-19
申请号：JP2844895
申请日：1995-02-16
申请人： NIPPON DENSO CO
发明人： MIZUTANI KOJI , KATAYAMA MASAYUKI , ITO NOBUE , HATTORI TADASHI
摘要： PURPOSE:To manufacture an electroluminescent (EL) element having a high quality luminescent layer capable of generating blue light emission of high brightness. CONSTITUTION:The first electrode 12, the first insulation layer 13, a luminescent layer14, the second insulation layer 15 and the second electrode 16 are stacked in order on a glass substrate 11, while the materials thereof at least at the side for taking out light being formed to be optically transparent. Regarding the luminescent layer 14, gases of a group II element material, a VI group element material and a luminescence center material as luminescent layer base materials are fed to a reaction furnace, and the vapor phase growth method for causing the reaction of the gases in the furnace is used to form a film. In this case, each material gas is introduced to the furnace via a separate gas feed pipe. The pipe arrangement is such that a pipe for the group II element material gas is positioned at a center, surrounded by a pipe for luminescent center material gas and, then, a pipe for the group VI element material gas at the outermost position.
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公开(公告)号：JPH088062A
公开(公告)日：1996-01-12
申请号：JP16642294
申请日：1994-06-24
申请人： NIPPON DENSO CO
发明人： MIZUTANI KOJI , KATAYAMA MASAYUKI , ITO NOBUE , HATTORI TADASHI
摘要： PURPOSE:To provide a method and a device whereby an electroluminescent element can be manufactured in a short time. CONSTITUTION:When an emitting layer made from elements such as those in Groups II, III and VI with addition of a luminescence center element is being formed using vapor-phase growth method, moisture contained in a transporting gas used to transport gasified organic metals to a reaction furnace 24 is removed by a dehydrating filter 28 to prevent decomposition of raw materials due to moisture, thereby enabling the raw materials to be stably supplied. The removal of moisture from within the transporting gas enables the raw materials to be stably supplied even if a temperature assumed to be the point at which the raw materials start to decompose is reached, and the emitting layer can be formed into a practical film thickness in a shorter period. Since the film can be formed at high speed, the rate at which impurities mix in the film is reduced and the performance of the emitting layer formed is enhanced, with brightness three times or more stronger than that of conventional layers.
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公开(公告)号：JPH06151539A
公开(公告)日：1994-05-31
申请号：JP32257392
申请日：1992-11-05
申请人： NIPPON DENSO CO , YAO TAKAFUMI
发明人： OSHIMA HISAZUMI , HATTORI TADASHI , YAO TAKAFUMI
摘要： PURPOSE:To make it possible to accurately measure an ultra-fine altered state in surface. CONSTITUTION:Electron and hole pairs are generated on the surface of a semiconductor device, and evaluation for a surface state of the semiconductor is carried out through photoluminescence caused by recombination of the pair of the electron and the hole. A semiconductor sample 105 is mounted on a container 102 filled with a gas atmosphere, in which the sample 105 can be chemically altered by exposing to a given gas atmosphere. A laser beam from a laser-beam source 101 as an exciting source is cast to the semiconductor sample 105, and the intensity of photoluminescence through an optical band pass filter 107 is measured with a photodetector 108 like a photomultiplier and the data is recorded and indicated with a recorder 109. When a sample is made of silicon, a photodetector 108 with good sensitivity around 1100nm is necessary.
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公开(公告)号：JPH0687690A
公开(公告)日：1994-03-29
申请号：JP26079492
申请日：1992-09-03
申请人： NIPPON DENSO CO
发明人： NAKAMURA SATOSHI , YAMAMOTO MINORU , ITO NOBUE , HATTORI TADASHI
IPC分类号： C23C16/26 , C23C16/27 , C30B29/04 , H01L21/205
摘要： PURPOSE:To form a high-purity diamond film on a large area at a high synthesis rate. CONSTITUTION:A raw gas consisting of an inert gas, a gaseous etchant and a carbon-source gas is injected from a plasma injection port 18 as a plasma jet gas, and the plasma jet gas is blown against a substrate 4 to deposit and form a diamond film. The ratio (C/E) of the carbon-source gas amt. C to the gaseous etchant amt. E is made lower at the peripheral part of the plasma jet gas arriving on the substrate than at its center. For example, the plasma jet gas having a lower C/E is introduced to the peripheral part of the plasma jet gas.
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公开(公告)号：JPH0613185A
公开(公告)日：1994-01-21
申请号：JP19313692
申请日：1992-06-26
发明人： MIZUKI SHINYA , ITO NOBUE , HATTORI TADASHI
摘要： PURPOSE:To provide a thin film EL display element by which high brightness emission becomes possible by low voltage impression. CONSTITUTION:A thin film EL display element 100 is formed by laminating a transparent electrode 12, the first emission layer 13, the first and the second insulating layers 14a and 14b, the second emission layer 15 and a back plate 16 in order on a glass substrate 11. In the thin film EL display element 100, The insulating layers are formed substantially as a single layer of the first and the second insulating layers 14a and 14b, so that a voltage drop can be reduced in the insulating layers. That is, since an electric field applied to the thin film EL display element 100 is impressed effectively on the first and the second emission layers 13 and 15, partial pressure of impressed voltage to the emission layers is increased, so that emission brightness to the impressed voltage can be heightened.
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公开(公告)号：JPH05290974A
公开(公告)日：1993-11-05
申请号：JP12127692
申请日：1992-04-14
发明人： ARAI MASUMI , HATTORI TAMOTSU , MIZUTANI KOJI , ITO NOBUE , HATTORI TADASHI
摘要： PURPOSE:To provide a thin film EL display element having high brightness and efficiency stably with high reproducibility. CONSTITUTION:A thin film EL display element 10 is formed with a lower electrode 2, a lower insulation layer 3, a luminous layer 4, an upper insulation layer 5 and an upper electrode, respectively stacked on a glass substrate 1 in sequence. The luminous layer 4 is made of zinc sulfide (ZnS) as a base material and a terbium as a luminous center material. A film formation condition or the like is so controlled that the luminous center element of the center luminous material in the layer 4 is in four-coordination state. As a result, the crystalline quality of the base material nearest the luminous center element smaller than a conventional ion radius in the luminous layer 4 is improved. Also, the occurrence of separated bonds is reduced. Consequently, the element 10 becomes free from a defect in the vicinity of the luminous center, and the energy loss of colliding thermions is reduced, thereby stably providing high brightness and efficiency with good reproducibility.
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公开(公告)号：JPH05226075A
公开(公告)日：1993-09-03
申请号：JP26973192
申请日：1992-09-10
发明人： MIZUKI SHINYA , ITO NOBUE , HATTORI TADASHI
摘要： PURPOSE:To inhibit degradation of a transparent oxide conductive film, and in particular, to prevent the film from becoming highly resistive. CONSTITUTION:A transparent electrode 12 consisting of an ITO conductive film transparent to visible light beam, is formed on a glass substrate 11 of a thin film EL display element 100. A transparent anti-oxygen-diffusion layer 13 consisting of silicon nitride expressed as SiNx, a first insulating layer 14 consisting of a mixture of Ta2O5 and Al2O3, an emission layer 15 consisting of ZnS, to which Tb, O, F are added, a second insulating layer 16 consisting of SiNx, a second insulating layer 16 consisting of a mixture of Ta2O5 and Al2O3, and a back electrode 19 consisting of Al are formed in this order on the substrate. Since the anti-oxide-diffusion layer 13 is formed between the transparent electrode 12 and the first insulating layer 14, diffusion of oxygen in the first insulating layer 14 into the transparent electrode 12 is inhibited by the anti-oxigen-diffusion layer 13, while the transparent electrode 12 is prevented from becoming highly resistive, and insulating destruction or uneven brightness will no be generated.
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公开(公告)号：JPH05102801A
公开(公告)日：1993-04-23
申请号：JP25803991
申请日：1991-10-04
申请人： NIPPON DENSO CO
摘要： PURPOSE:To provide the frequency variable oscillator controlled digitally. CONSTITUTION:Odd numbers (65) of NAND and inverter circuits INV are connected in a ring and switching circuits SW1, SW2 are used to select the connection stage number into two-stage units in a range of 33-65. Moreover, the switching circuits SW1, SW2 are subject to ON/OFF control by a decoder 20 converting 5-bit digital data CDL inputted externally into switching signals DC0-DC16 whose specific signal only goes to a low level. As a result, a pulse signal is circulated in a ring comprising the NAND and inverter circuits INV and number of stages of the connection of the inverting circuits at circulation and number of times of circulation are controlled to obtain an oscillation signal with a desired frequency.
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