公开(公告)号：JP2004163710A

公开(公告)日：2004-06-10

申请号：JP2002330351

申请日：2002-11-14

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： NAGAI TAKAFUMI ,  SAWAI MASAYUKI ,  ISHIDA TOSHINAO ,  KIDA YASUSHI ,  KOREMATSU KAZUYA ,  NISHIKAWA TORU ,  KOJIMA YOSHIMI

IPC: G03G9/08 ,  G03G9/097

CPC classification number: G03G9/097 ,  G03G9/0821

Abstract: PROBLEM TO BE SOLVED: To provide a nonmagnetic monocomponent toner giving stable image quality in a long-term use. SOLUTION: In the nonmagnetic monocomponent toner consisting of colored particles comprising at least a binder resin, a colorant and a wax and at least one external additive, an external additive having an average particle diameter, the relation of which with the Vickers hardness of the colored particles is within a prescribed range, is used. COPYRIGHT: (C)2004,JPO

公开(公告)号：JPS6167222A

公开(公告)日：1986-04-07

申请号：JP18854484

申请日：1984-09-07

Applicant: Sharp Corp

Inventor： EBARA NOBORU ,  MATSUYAMA TOSHIRO ,  KOJIMA YOSHIMI

IPC: H01L21/20 ,  H01L21/205

CPC classification number: C23C16/54

Abstract: PURPOSE:To offer a thin film manufacturing device having merits of an in-line method and a batch method and suitable for mass production by composing a film forming vacuum vessel and an external auxiliary device in order to move relatively serially and to proceed a forming film. CONSTITUTION:When a substrate 2 is set at a position (a) and an exhaustion is done from an exhaust port 4 with closing a gas introducing port 7, the substrate 2 is heated by a heater 3. When the substrate 2 is heated to a specified balancing temperature, a vacuum thin film formation is done with such as the plasma CVD, the spatter method, the ion plating method and the ICB method after the film forming vacuum vessel 8 is moved to a position (b). The film forming vacuum vessel 8 is moved to a position (c) by a proper disassembling or replacement of a gas introducing system 7', an exhaust system 4' and a power unit 6 after the process, and the substrate 2 forming a thin film is taken off a valve 1 after a proper time.

Abstract translation: 目的：提供一种薄膜制造装置，其具有在线方法和分批方法的优点，并且适于通过组合成膜真空容器和外部辅助装置进行批量生产，以便相对连续地移动并进行成膜 。 构成：当基板2被设置在位置（a）并且通过关闭气体引入口7从排气口4进行排气时，基板2被加热器3加热。当基板2被加热到 在成膜真空容器8移动到位置（b）之后，通过等离子体CVD，溅射法，离子镀法和ICB法等进行真空薄膜形成。 成膜真空容器8通过在处理之后适当地拆卸或更换气体导入系统7'，排气系统4'和动力单元6而移动到位置（c），并且基板2形成薄膜 在适当的时间之后从阀门1上取下。

公开(公告)号：JPS58185428A

公开(公告)日：1983-10-29

申请号：JP6647782

申请日：1982-04-20

Applicant: Sharp Corp

Inventor： EBARA NOBORU ,  KOJIMA YOSHIMI ,  IMADA EIJI ,  MATSUYAMA TOSHIROU

IPC: C01B33/02 ,  C23C16/02 ,  C23C16/24 ,  C23C16/30 ,  C23C16/34 ,  C23C16/50 ,  H01L21/318

CPC classification number: C23C16/029

Abstract: PURPOSE:The titled stable protecting film, being prepared easily, not reducing electrical properties such as photosensitivity, etc., obtained by forming a BN layer on the surface layer of an amorphous silicon layer to which B is added. CONSTITUTION:In the last stage of a process wherein B2H4 gas as a B source is added to SiH4 gas and the gases are decomposed by plasma discharge using GD-CVD device, to form a B-containing amorphous silicon layer on a substrate, a ratio of the B2H6 gas to be added to the SiH4 gas is increased and simultaneously N2 gas is introduced to the device, so that a BN film having preferably 50-several hundred Angstrom film thickness is formed on the surface of the amorphous silicon layer. The BN film can be formed by the same process easily in a short time without changing conditions of the formation of the amorphous silicon film and form extremely physically stable protecting film because B and BN in the layer are continuous.

Abstract translation: 目的：通过在添加了B的非晶硅层的表面层上形成BN层而获得的，容易制备的标题稳定的保护膜不会降低诸如光敏性等的电性能。 构成：在使用GD-CVD装置将作为B源的B2H4气体添加到SiH 4气体并且通过等离子体放电分解气体的方法的最后阶段中，在基板上形成含B的非晶硅层， 的添加到SiH 4气体中的B 2 H 6气体的浓度增加，并且同时将N2气引入到该装置中，使得在非晶硅层的表面上形成优选为50几百埃厚膜的BN膜。 BN膜可以在短时间内容易地通过相同的工艺形成，而不会改变非晶硅膜的形成条件，并且由于层中的B和BN是连续的而形成非常物理上稳定的保护膜。

公开(公告)号：JPS6199148A

公开(公告)日：1986-05-17

申请号：JP22357984

申请日：1984-10-22

Applicant: Sharp Corp

Inventor： HAYAKAWA HISASHI ,  NOJIMA HIDEO ,  IMADA EIJI ,  KOJIMA YOSHIMI ,  NARUKAWA SHIRO ,  MATSUYAMA TOSHIRO ,  EBARA NOBORU

IPC: G03G5/08 ,  G03G5/14

CPC classification number: G03G5/08

Abstract: PURPOSE:To prevent peeling of a photoconductive layer by laminating on a conductive substrate the first interlayer, the photoconductive layer composed essentially of an amorphous silicon, the second interlayer, and a surface layer made of a specified amorphous material. CONSTITUTION:The electrophotographic sensitive body is formed by successively laminating on the conductive substrate 1 the first interlayer 2 composed essentially of amorphous silicon (a-Si) for preventing injection of charge from the substrate 1, the photoconductive layer 3 composed essentially of a-Si, the second interlayer 4 made of a-Si for executing electrical and mechanical matching, and the surface layer 5 made of an amorphous material having a wide optical band gap. The a-Si for forming the photoconductive layer etc., as the essential component, is prepared by the plasma CVD method in which gaseous monosilane is decomposed by the glow discharge.

Abstract translation: 目的：为了防止光导电层在导体基板上层叠第一中间层，光电导层基本上由非晶硅，第二中间层和由特定无定形材料制成的表面层组成。 构成：电子照相感光体通过在导电基板1上依次层叠形成基本上由非晶硅（a-Si）构成的第一中间层2，以防止从基板1注入电荷，光电导层3基本上由a-Si ，由用于执行电气和机械匹配的a-Si制成的第二中间层4和由具有宽的光学带隙的非晶材料制成的表面层5。 用于形成光电导层等的a-Si作为必要组分，通过等离子体CVD方法制备，其中气态单硅烷被辉光放电分解。

公开(公告)号：JPS6163852A

公开(公告)日：1986-04-02

申请号：JP18614984

申请日：1984-09-04

Applicant: Sharp Corp

Inventor： NOJIMA HIDEO ,  EBARA NOBORU ,  MATSUYAMA TOSHIRO ,  IMADA EIJI ,  KOJIMA YOSHIMI ,  HAYAKAWA HISASHI ,  NARUKAWA SHIRO

IPC: G03G5/08 ,  G03G5/14

CPC classification number: G03G5/08

Abstract: PURPOSE:To stabilize the surface of a photosensitive body and to improve the reliability thereof by providing a surface layer of a-SiNx added with fluorine on an a-Si photoconductive layer. CONSTITUTION:The photosensitive body is constituted of the photoconductive layer 3 consisting essentially of a-Si and the surface layer 4 which consists of the a-SiNx added fluorine, has a large optical energy band gap and is formed on said layer. The optical energy band gap of the a-SiNx of the layer 4 is made 2.0eV and the film thickness thereof is made in a 0.01-0.1mum range or 0.1-0.3mum. The a-SiNx used for such layer 4 is thermally stable dielectric break down electric field is high and has water repellency, thus having the effect of preventing the deterioration in the characteristics owing to adsorption of water, etc. A blocking layer 2 is preferably provided on the substrate 1 prior to the formation of the layer 3 to block carrier implantataion and to maintain electrostatic charge. The surface of the photosensitive body is thus stabilized by providing the a-SiNx surface layer 4, by which the reliability thereof is improved.

Abstract translation: 目的：为了稳定感光体的表面，并通过在a-Si光电导层上提供添加氟的a-SiNx的表面层来提高其可靠性。 构成：感光体由基本上由a-Si组成的光电导层3和由a-SiNx添加的氟组成的表面层4构成，具有大的光能带隙并形成在所述层上。 层4的a-SiNx的光能带隙为2.0eV，膜厚为0.01-0.1μm或0.1-0.3μm。 用于这种层4的a-SiNx是热稳定的介电分解电场高且具有防水性，因此具有防止由于吸附水等导致的特性劣化的效果。优选提供阻挡层2 在形成层3之前的衬底1上，以阻止载体植入并维持静电电荷。 因此，通过设置a-SiNx表面层4来稳定感光体的表面，提高了可靠性。

公开(公告)号：JPS5948769A

公开(公告)日：1984-03-21

申请号：JP16046882

申请日：1982-09-13

Applicant: Sharp Corp

Inventor： EBARA NOU ,  IMADA EIJI ,  MATSUYAMA TOSHIROU ,  KOJIMA YOSHIMI ,  HAYAKAWA HISASHI

IPC: G03G5/08

CPC classification number: G03G5/08

Abstract: PURPOSE:To obtain a receptor ensuring blocking action, by doping a photoconductive semiconductor layer with an impurity in the vicinity of the boundary of the semiconductor layer contacting an electrically blocking insulating layer interposed between an electric conductor and the semiconductor layer. CONSTITUTION:A film of an insulating material such as Si3N4, SiO2 or BN is deposited as a blocking layer on the surface of a metal as an electric conductor for a substrate, and an amorphous silicon layer with high resistance contg. carriers compensated sufficiently with boron or the like is formed on the insulating film. The amorphous silicon layer is doped with an impurity in the vicinity of the interface between the silicon layer and the blocking layer to increase the effect of hindering carriers from being injected from the metal of the substrate and to facilitate the outflow of carriers into the metal of the substrate. When the resulting receptor is negatively charged, an impurity for converting amorphous silicon into p type amorphous silicon is used in the formation of the amorphous silicon layer. When the receptor is positively charged, an impurity for converting amorphous silicon into n type amorphous silicon is used.

Abstract translation: 目的：为了获得确保阻塞作用的受体，通过在半导体层的与导电体和半导体层之间的电阻绝缘层接触的边界附近掺杂有杂质的光电导半导体层。 构成：作为基板用电导体的金属表面，作为阻挡层，淀积Si 3 N 4，SiO 2，BN等绝缘材料的膜，以及具有高电阻的非晶硅层。 在绝缘膜上形成用硼等充分补偿的载流子。 非晶硅层在硅层和阻挡层之间的界面附近掺杂有杂质，以增加阻碍载体从衬底的金属注入的作用，并促进载流子流入金属的金属 底物。 当所得到的受体带负电时，用于将非晶硅转化为p型非晶硅的杂质用于形成非晶硅层。 当受体带正电时，使用用于将非晶硅转换为n型非晶硅的杂质。

公开(公告)号：JPS61110768A

公开(公告)日：1986-05-29

申请号：JP23465284

申请日：1984-11-05

Applicant: Sharp Corp

Inventor： MATSUYAMA TOSHIRO ,  KOJIMA YOSHIMI ,  EBARA NOBORU

IPC: C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  G03G5/08 ,  G03G5/082 ,  H01L31/20

CPC classification number: C23C16/24 ,  C23C16/5093 ,  C23C16/54 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: PURPOSE:To increase a film forming speed, and to manufacture a uniform and homogeneous aSi photosensitive body by providing inside and outside cylindrical electrodes of a concentric circle shape in a reaction tank, providing a photosensitive base body of a cylindrical electric conductor between both the electrodes, and also leading in a raw material gas from plural parts. CONSTITUTION:A cylindrical outside electrode 21 is formed on the inside peripheral surface of an outside peripheral wall 11 of a reaction tank 10 of a plasma CVD device, and a cylindrical inside electrode 22 is provided on the concentric circle of said electrode. Plural photosensitive base bodies 30 consisting of a cylindrical electric conductor are provided at equal intervals between both the electrodes 21, 22, and they are rotated and revolved on the periphery by a rotating and revolving mechanism 60. Also, plural leading-in ports 40 of a raw material gas to the inside of the reaction tank 10 are provided at equal intervals on the outside peripheral wall 11, and an exhaust port 50 is provided on the center shaft through the inside electrode 22. According to this mechanism, before many gases pass through the periphery of plural base bodies and are exhausted, the utilization efficiency of the raw material gas is improved.

Abstract translation: 目的：为了提高成膜速度，通过在反应槽内设置同心圆形的内外圆柱形电极，制造均匀均匀的aSi感光体，在两电极之间提供圆柱形电导体的光敏基体 并且还引导来自多个部件的原料气体。 构成：在等离子体CVD装置的反应槽10的外周壁11的内周面上形成有圆筒状的外部电极21，在该电极的同心圆上设置有圆筒状的内部电极22。 由圆柱形电导体组成的多个感光基体30在两个电极21,22之间以相等的间隔设置，并且它们通过旋转和旋转机构60在周边旋转旋转。而且，多个导入口40 在反应罐10的内部的原料气体以等间隔设置在外周壁11上，并且通过内部电极22在中心轴上设置排气口50.根据该机构，在许多气体通过之前 通过多个基体的周边排出，提高原料气体的利用效率。

公开(公告)号：JPS60191269A

公开(公告)日：1985-09-28

申请号：JP4836884

申请日：1984-03-13

Applicant: Sharp Corp

Inventor： MATSUYAMA TOSHIROU ,  HAYAKAWA HISASHI ,  KOJIMA YOSHIMI ,  NARUKAWA SHIROU ,  EBARA NOBORU

IPC: C23C16/50 ,  C23C16/509 ,  G03G5/08 ,  G03G5/082 ,  H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/5093 ,  G03G5/082 ,  H01J37/32733 ,  H01J2237/3321

Abstract: PURPOSE: To reduce the size of a vacuum tank by connecting the high frequency terminal of a matching box to a photosensitive body base while grounding the vacuum tank, and applying a high frequency potential and generating plasma.
CONSTITUTION: A drum 10 as the photosensitive body base is set in the center in the vacuum tank 11, which is grounded. The drum 10 is connected to the RF terminal of the matching box 12, which is composed of a tank circuit which supplies high frequency electric power from an RF power source to the drum 10 by capacitive coupling. A capacitor 13 connected to the RF terminal side adjusts the frequency of the tank circuit. The RF potential is applied between the drum 10 and vacuum tank 11 from the box 12 through the capacitor 13 to generate a high frequency electric field and the reaction gas in the vacuum tank 11 is ionized to generate plasma, so that a photosensitive film is grown on the drum 10. Thus, the vacuum tank 11 is reduced in size.
COPYRIGHT: (C)1985,JPO&Japio

Abstract translation: 目的：通过将匹配箱的高频端子与感光体基座连接，同时将真空槽接地，并施加高频电位并产生等离子体，来减小真空槽的尺寸。 构成：作为感光体基座的鼓10被设置在接地的真空槽11的中心。 鼓10连接到匹配盒12的RF端子，该盒体由通过电容耦合从RF电源向鼓10提供高频电力的电路构成。 连接到RF端子侧的电容器13调节储能电路的频率。 RF电位通过电容器13从箱体12施加在鼓10和真空槽11之间，以产生高频电场，并将真空槽11中的反应气体离子化以产生等离子体，使得感光膜生长 因此，真空槽11的尺寸减小。

公开(公告)号：JPS59136741A

公开(公告)日：1984-08-06

申请号：JP1103683

申请日：1983-01-25

Applicant: Sharp Corp

Inventor： EBARA JIYOU ,  HAYAKAWA HISASHI ,  MATSUYAMA TOSHIROU ,  IMADA EIJI ,  KOJIMA YOSHIMI

IPC: G03G5/08

CPC classification number: G03G5/08

Abstract: PURPOSE:To obtain the titled body high in mechanical strength and superior in retentivity of surface acceptance potential by forming a semiconductor layer of a compd. of group II-VI, and a specified layer for generating photoelectrons on a conductive substrate. CONSTITUTION:A reaction chamber in which a conductive substrate 1 is evacuated and a heater 4 is energized to heat the substrate 1, a gas system 5 is opened to introduce a gaseous mixture of Ar and O2, switches 60, 81 are closed to supply power from a high frequency impressing circuit 9 to a target 6 of a compd. of group II-VI, a shutter 10 is opened, and thus, a semiconductor layer 2 of a compd. of group II-V is formed as a carrier transfer layer and blocking layer. Then, the heater 4 is controlled to keep the substrate 1 at a cold temp., a gaseous mixture of Ar, H2, and/or F, and a dopant is introduced, switches 70, 82 are closed to energize a multicrystal Si target 7, and thus, a photoelectron generating layer 3 consisting of amorphous silicon stabilized with H2 and/or F is formed by opening a shutter 11.

Abstract translation: 目的：通过形成化合物的半导体层，获得机械强度高，表面接受电位保持性优异的标准物质。 的II-VI族，以及在导电性基材上产生光电子的规定层。 构成：将导电基板1抽真空并加热器4通电以加热基板1的反应室，打开气体系统5以引入Ar和O2的气体混合物，开关60,81闭合以供电 从高频施加电路9到化合物的目标6。 在组II-VI中，打开快门10，因此，打开半导体层2。 形成II-V族作为载流子转移层和阻挡层。 然后，加热器4被控制以将基板1保持在低温，引入Ar，H2和/或F的气体混合物和掺杂剂，开关70,82闭合以激励多晶Si靶7 因此，通过打开快门11来形成由用H2和/或F稳定的非晶硅组成的光电子产生层3。

公开(公告)号：JPS59111152A

公开(公告)日：1984-06-27

申请号：JP22164282

申请日：1982-12-16

Applicant: Sharp Corp

Inventor： EBARA SHIYOU ,  KOJIMA YOSHIMI ,  IMADA EIJI ,  HAYAKAWA HISASHI ,  MATSUYAMA TOSHIROU

IPC: G03G5/08 ,  G03G5/082

CPC classification number: G03G5/08214 ,  G03G5/08 ,  G03G5/08221

Abstract: PURPOSE: To obtain a titled photosensitive body having a high resistance photosensitive layer of which the characteristic is stable with no change in the lapse of time by forming specific amorphous silicon on a conductor.
CONSTITUTION: A conductor installed in a reaction vessel of a capacity coupled type GD-CVD device is heated with a heater to 250W300°C. Gaseous NH
3 as N source, SiH
4 as Si and SiF
4 as F are adjusted to 5W30% flow rate with NH
3 /(SiH
4 +SiF
4 ) and B
2 H
4 is added as B at 500W10,000ppm to such gaseous mixture which is then introduced into a reaction vessel and low voltage glow discharge is induced to generate plasma, thereby forming an amorphous silicon film consisting of a-Si
1-x N
x added with B on the conductor. A dark resistance characteristic which is stable for a long period of time is thus provided to a photosensitive body utilizing the holding characteristic of the electrostatic charge.
COPYRIGHT: (C)1984,JPO&Japio

Abstract translation: 目的：通过在导体上形成特定的非晶硅，获得具有稳定性的高电阻感光层的标题感光体，不会随时间变化。 构成：安装在容量耦合型GD-CVD装置的反应容器中的导体用加热器加热至250-300℃。 作为N源的气体NH 3，作为Si的SiH 4和作为F的SiF 4被调节为具有NH 3 /（SiH 4 + SiF 4）的5-30％的流速，并且将B2H4作为B添加到500-10,000ppm的气态混合物中，然后将其引入 诱导反应容器和低电压辉光放电以产生等离子体，从而在导体上形成由添加有B的a-Si1-xNx组成的非晶硅膜。 因此，利用静电电荷的保持特性，将感光体提供长时间稳定的暗电阻特性。