公开(公告)号：JP2007026870A

公开(公告)日：2007-02-01

申请号：JP2005207014

申请日：2005-07-15

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： TAKEUCHI HIROAKI ,  NAKANISHI TAKESHI ,  MAKITA NAOKI

IPC: H01J37/248 ,  H01J37/305 ,  H01J37/317 ,  H05H5/02

Abstract: PROBLEM TO BE SOLVED: To stably control quantity of thermion emitted from a filament in high precision.
SOLUTION: A filament controller 10 comprises a resistance measuring means 1 to measure resistance value of a filament 5, an average resistance value computing unit 2 to compute the average resistance value Rave in a first period, a current target value computing unit 3 to compute the current target value Iref to be supplied to the filament 5 based on the average resistance value Rave and power target value Wref, a constant current power source 4 to control the current value flowing through the filament 5 so that it may match the current target value Iref in a second period after the first period, and a timing control circuit 6 to control timing of the first period and the second period.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：以高精度稳定地控制从灯丝发出的热离子的量。 解决方案：灯丝控制器10包括用于测量灯丝5的电阻值的电阻测量装置1，计算第一时段中的平均电阻值Rave的平均电阻值计算单元2，当前目标值计算单元3 基于平均电阻值Rave和功率目标值Wref来计算要提供给灯丝5的当前目标值Iref，恒定电流源4用于控制流过细丝5的电流值，使得其可以匹配电流 在第一周期之后的第二周期中的目标值Iref;以及定时控制电路6，用于控制第一周期和第二周期的定时。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004207298A

公开(公告)日：2004-07-22

申请号：JP2002371422

申请日：2002-12-24

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MAKITA NAOKI

IPC: G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/12 ,  H01L27/1285 ,  H01L29/06 ,  H01L29/42384

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability by preventing a phenomenon that leakage current increases at a TFT off operation time and to provide a method for manufacturing the same. SOLUTION: The semiconductor device includes a channel region 110, a semiconductor layer including a source region 115 and a drain region 115, a gate insulating film 107 provided on the semiconductor layer, and a thin film transistor 118 having a gate electrode 108 for controlling the conductivity of the channel region. The surface of the semiconductor layer has fine protrusions. The inclining angle of the side face of the gate electrode 108 is larger than that of the protrusion of the semiconductor layer. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003037064A

公开(公告)日：2003-02-07

申请号：JP2002142264

申请日：2002-05-17

Applicant: Semiconductor Energy Lab Co Ltd ,  Sharp Corp ,  シャープ株式会社 ,  株式会社半導体エネルギー研究所

Inventor： NAKAJIMA SETSUO ,  SHIGA AIKO ,  MAKITA NAOKI ,  MATSUO TAKUYA

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a technology for manufacturing a TFT in which variation of electrical characteristics is suppressed. SOLUTION: Contamination of a semiconductor film is suppressed by performing oxidation having an effect of removing organic matters following to removal of a native oxide formed on the surface of the semiconductor film, thereby forming a clean oxide film and then performing laser annealing. A TFT in which variation of electrical characteristics is suppressed can be obtained when a semiconductor film thus obtained is employed in the active layer of the TFT and the electrical characteristics can be enhanced. Furthermore, productivity can be enhanced while minimizing lowering of throughput by employing an apparatus in this invention for manufacturing a semiconductor device.

Abstract translation: 要解决的问题：提供一种抑制电特性变化的TFT的制造技术。 解决方案：通过在除去形成在半导体膜表面上的自然氧化物之后进行具有去除有机物质的效果的氧化来抑制半导体膜的污染，从而形成干净的氧化膜，然后进行激光退火。 如果在TFT的有源层中使用由此获得的半导体膜，则可以获得抑制电特性变化的TFT，并且可以提高电特性。 此外，通过采用本发明的用于制造半导体器件的装置，可以最大限度地提高生产率，同时最小化吞吐量降低。

公开(公告)号：JP2007335893A

公开(公告)日：2007-12-27

申请号：JP2007216103

申请日：2007-08-22

Applicant: Semiconductor Energy Lab Co Ltd ,  Sharp Corp ,  シャープ株式会社 ,  株式会社半導体エネルギー研究所

Inventor： HIROSUE MISAKO ,  HAMAYA TOSHIJI ,  MAKITA NAOKI

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To improve the significant unevenness of an additional amount of catalyst element in a substrate when a large substrate with diagonal line of 500 mm or longer is used, because the unevenness of the additional amount of catalyst element in the substrate may affect the variation of crystallinity in a crystalline semiconductor film after crystallized and may also badly affect the electrical characteristics of a TFT finally formed of the crystalline semiconductor film. SOLUTION: A spin rotation acceleration in a transition period between the "catalyst element solution dropping" treatment and "high speed spin drying" treatment is lowered to improve the unevenness of the additional amount of catalyst element in the substrate, because catalyst elements are added to the central section and end of an insulative substrate so as to allow the concentration ratio of the catalyst elements to be less than twice in the two regions in a catalyst element spin addition step. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了在使用对角线为500mm以上的大型基板时，为了提高基板中附加量的催化剂元素的显着不均匀性，由于催化剂元素附加量的不均匀性 衬底可能会影响结晶后晶体半导体膜中结晶度的变化，也可能严重影响由结晶半导体膜最终形成的TFT的电特性。 解决方案：在“催化剂元素溶液滴下”处理和“高速旋转干燥”处理之间的过渡时段中的旋转旋转加速度降低，以改善基板中附加量的催化剂元素的不均匀性，因为催化剂元素 添加到绝缘性基板的中央部和端部，以使催化剂元素自旋添加工序中的两个区域的催化剂成分的浓度比不足2倍。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007042300A

公开(公告)日：2007-02-15

申请号：JP2005221965

申请日：2005-07-29

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： TAKEUCHI HIROAKI ,  YAMAMOTO TATSUSHI ,  NAKANISHI TAKESHI ,  MAKITA NAOKI

IPC: H01J49/30 ,  H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To perform a mass separation of high accuracy even for an ion beam of large area. SOLUTION: The mass separation device 10 is provided with a nearly folding fan-shaped deflection case 1; hollow-core solenoid-shaped current passages 2 composed of an inlet part conductor 22, an outlet part conductor 2d, an outer diameter side conductor 2a, and an inner diameter side conductor 2b; inlet part magnetic shielding 7c arranged so as to face the inlet part conductor 2c; and outlet part magnetic shielding 7d arranged so as to face the outlet part conductor 2d. A uniform magnetic field is formed inside the current passage 2 composed of the inlet part conductor, the outlet part conductor, the outer diameter side conductor, and the inner diameter side conductor, and leakage of magnetic field toward outside of the current passage 2 is prevented by the inlet part magnetic shielding 7c and the outlet part magnetic shielding 7d. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使对于大面积的离子束也执行高精度的质量分离。 解决方案：质量分离装置10设置有几乎折叠的扇形偏转壳体1; 由入口部导体22，出口部导体2d，外径侧导体2a和内径侧导体2b构成的中空螺线管形电流通路2; 入口部磁屏蔽7c，其配置成与入口部导体2c相对; 和排出部分磁屏蔽7d，以便面对出口部分导体2d。 在由入口部导体，出口部导体，外径侧导体和内径侧导体构成的电流通路2的内部形成均匀的磁场，并且防止磁场向电流通路2的外部泄漏 通过入口部分磁屏蔽7c和出口部分磁屏蔽7d。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006128469A

公开(公告)日：2006-05-18

申请号：JP2004316248

申请日：2004-10-29

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MAKITA NAOKI

IPC: H01L29/786 ,  H01L21/20 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor and a method of manufacturing the same, wherein catalytic elements contained in the active region of its crystalline semiconductor layer can be fully reduced in concentration, and the device or the thin-film transistor can be manufactured at a low cost, without increasing the number of processes. SOLUTION: The thin film transistor 10 is equipped with a channel region 7, a semiconductor layer 13 provided with crystalline regions containing source/drain regions 9, a gate insulating film 3, formed at least on the channel region 7 and source/drain regions 9 of the semiconductor layer 13, and a gate electrode 5 formed confronting the channel region 7 through the intermediary of the gate insulating film 3. The semiconductor layer 13 is, furthermore, provided with a gettering region 11 that contains catalytic elements that are higher in concentration than that of the source/drain regions 9, and a part of the gate insulating film 3 above the gettering region 11 is set thinner than, at least another part of the gate insulating film 3 between the gate electrode 5 and the semiconductor layer 13. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种薄膜晶体管及其制造方法，其中包含在其结晶半导体层的有源区中的催化元素的浓度可以完全降低，并且该器件或薄膜晶体管， 可以以低成本制造薄膜晶体管，而不增加工艺数量。 解决方案：薄膜晶体管10配备有沟道区域7，具有含有源极/漏极区域9的结晶区域的半导体层13，至少形成在沟道区域7上的栅极绝缘膜3和源极/ 半导体层13的漏极区9以及通过栅极绝缘膜3介于沟道区7之间形成的栅电极5.此外，半导体层13还具有吸收区11，其包含催化元素， 浓度高于源极/漏极区域9，并且在吸气区域11上方的栅极绝缘膜3的一部分被设定为比栅极电极5和半导体之间的栅极绝缘膜3的至少另一部分更薄 第13层。版权所有（C）2006年，JPO＆NCIPI

公开(公告)号：JP2005259780A

公开(公告)日：2005-09-22

申请号：JP2004065639

申请日：2004-03-09

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KUMAGAI KOICHI ,  MAKITA NAOKI

IPC: H01L27/08 ,  H01L21/20 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device that has TFTs having different characteristics. SOLUTION: The semiconductor device is provided with a plurality of thin film transistors 224 and 225 each having a semiconductor layer 204 containing a channel forming region 220, a source region 214, a drain region 214, a gate insulating film 215 provided on the semiconductor layer 204, and gate electrodes 216/211 which are provided on the gate insulating film 215 to control the electrical conductivity of the channel forming region 220. The thin film transistors 224 and 225 are divided into a plurality of groups having different threshold voltages by setting the channel lengths specified by the lengths of the gate electrodes 216/211. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有不同特性的TFT的半导体器件。 解决方案：半导体器件设置有多个薄膜晶体管224和225，每个薄膜晶体管224和225各自具有包含沟道形成区域220，源极区域214，漏极区域214，栅极绝缘膜215的半导体层204 半导体层204和栅电极216/211，其设置在栅极绝缘膜215上以控制沟道形成区域220的导电性。薄膜晶体管224和225被划分成具有不同阈值电压的多个组 通过设定由栅电极216/211的长度指定的沟道长度。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004327677A

公开(公告)日：2004-11-18

申请号：JP2003119621

申请日：2003-04-24

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MAKITA NAOKI

IPC: H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystalline semiconductor film having high reliability with sufficiently reduced content of catalytic elements. SOLUTION: The method for manufacturing a semiconductor film comprises steps of preparing a first semiconductor film 104b containing the catalytic elements for accelerating crystallization of an amorphous semiconductor film 104, providing a second semiconductor film 107 to be in contact with an upper part of the first semiconductor film 104b, transferring the catalytic elements present in the first semiconductor film 104b to the second semiconductor film 107 by giving a first heat treatment to the first semiconductor film 104b, oxidizing the second semiconductor film 107, and removing an oxidized second semiconductor film 109. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004179501A

公开(公告)日：2004-06-24

申请号：JP2002345807

申请日：2002-11-28

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MAKITA NAOKI ,  IWAI MICHINORI

IPC: H01L21/205 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a superior crystalline semiconductor film and its manufacturing method. SOLUTION: The manufacturing method comprises processes of forming an amorphous semiconductor layer containing rare gas elements on an insulating surface, crystallizing the amorphous semiconductor layer into a crystalline semiconductor layer by making the amorphous semiconductor layer undergo a first thermal treatment after a catalytic element for promoting crystallization is given to it, and forming a low catalytic region which is lower in catalyst content than the other region in the crystalline semiconductor layer by moving at least some of the catalyst left in the crystalline semiconductor layer. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004179330A

公开(公告)日：2004-06-24

申请号：JP2002342851

申请日：2002-11-26

Applicant: Semiconductor Energy Lab Co Ltd ,  Sharp Corp ,  シャープ株式会社 ,  株式会社半導体エネルギー研究所

Inventor： MAKITA NAOKI ,  NAKAZAWA MISAKO ,  ONUMA HIDETO

IPC: H01L27/08 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To reduce the disused catalytic metal content of a crystalline semiconductor film after the film is crystallized when the semiconductor film is manufactured by the use of a catalytic metal element.
SOLUTION: The catalytic metal element is moved up to the upper part of the crystalline semiconductor film, so that the upper part of the crystalline semiconductor film gets higher in catalytic metal element content than the lower part of the crystalline semiconductor film. The catalytic metal element and the semiconductor compound of the catalytic metal element on the surface of the crystalline semiconductor film are selectively removed, so that the crystalline silicon film can be reduced in catalytic metal element content.
COPYRIGHT: (C)2004,JPO