Abstract:
PROBLEM TO BE SOLVED: To provide an ion implantation device in which deterioration of characteristics of an element can be prevented. SOLUTION: The ion implantation device is provided with a sample board 22 at which a sample 21 having a main face is installed; an ion generating means 11 for generating a plurality of ions, which contains a container in which ion source gas is supplied, and a filament installed in the container and emitting thermions; injection means 13 to 19 for injecting an ion beam containing the plurality of ions into the main face of the sample 21; and controlling means 23 to 25 to control the position of the sample 21 so that the eccentric direction of the center of gravity of the ion beam coincides with a direction of normal line of the main face. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To simplify determination of emission characteristics of a field emission source.SOLUTION: The state of an emitter can be determined by measurements of how the current changes with the extraction voltage. A field factor β function is determined by a series of relatively simple measurements of charged particles emitted at different conditions. The β function can then be used to determine derived characteristics of the emission that, in the prior art, were difficult to determine without removing a source from a focusing column and mounting it in a specialized apparatus. The relations are determined by the source configuration and have been found to be independent of the emitter shape, and thus the emission characteristics can be determined even when the emitter shape changes over time, without having to determine the emitter shape and without having to redefine a relation between the β function and the series of relatively simple measurements and relations between the β function and other emission parameters.