Abstract:
Systems and methods automatically modify a laser-based system for processing target specimens such as semiconductor wafers. In one embodiment, the laser-based system detects a trigger associated with a processing model. The processing model corresponds to a set of wafers. In response to the trigger, the system automatically adjusts one or more system parameters based on the processing model. The system then uses the modified system parameters to selectively irradiate structures on or within at least one wafer in the set of wafers. In one embodiment, the trigger includes variations in a thermal state related to a motion stage. In response to the variations in the thermal state, the system operates the motion stage in a series of movements until a thermal equilibrium threshold is reached. The sequence of movements may, for example, simulate movements used to process a particular wafer.
Abstract:
Provided is a laser processing apparatus which can easily and surely perform steps from double face scribing to double face breaking. The laser processing apparatus is provided with a first beam scanning optical system (22a), which shapes a beam into a first beam composed of a parallel luminous flux and guides the first beam to a substrate front surface for scanning; a second beam scanning optical system (22b), which shapes a beam into a second beam composed of a parallel luminous flux and guides the second beam to a substrate rear surface for scanning; and a table having a substrate placing surface (41) divided by a groove (49) to be an optical path for guiding the second beam to the substrate rear surface. On the substrate placing surface, floating mechanisms (41, 47) are formed of a porous member for floating the substrate by blowing a gas to the substrate. An abutting section (54) is arranged for limiting movement of the substrate in the horizontal direction by abutting to the side surface of the floated substrate. Double face scribing is performed to the substrate in a state where the substrate is placed on the substrate placing surface, and the substrate is broken from each surface in the floated state.
Abstract:
PURPOSE: A laser processing apparatus and method are provided to cut an accurate hole on a substrate by correcting a position error of the hole. CONSTITUTION: A laser processing apparatus comprises a stage(110), a laser oscillator(120), a scanner(130), and a camera(140). The stage on which a substrate(100) is placed is electrically connected to a stage driving unit(112). The laser oscillator projects a laser beam(L) which propagates to the substrate and forms a hole on the substrate. The scanner comprising a first and a second optical section(132,136) and a laser scanner(134) is located on the optical path of the laser beam from the laser oscillator. The camera comprises a first pickup camera(142).
Abstract:
The invention relates in general level to radiation transference techniques as applied for utilisation of material handling. The invention relates to a radiation source arrangement comprising a path of radiation transference, or an improved path of radiation transference, which path comprises a scanner or an improved scanner. The invention also concerns a target material suitable for vaporization and/or ablation. The invention concerns an improved scanner. The invention concerns also to a vacuum vaporization/ablation arrangement that has a radiation source arrangement according to invention. The invention concerns also a target material unit, to be used in coating and/or manufacturing target material.
Abstract:
본 발명은, 결정 입자 지름이 작고, 등간격으로 격자 모양으로 정렬한 결정 입자를 가지는 반도체 박막, 박막 트랜지스터, 그것들의 제조 방법 및 반도체 박막의 제조 장치를 얻는 것을 목적으로 한다. 본 발명에 따른 반도체 박막은, 비정질의 반도체 박막에 레이저광(12)을 조사함으로써 다결정화된 것이다. 그리고, 본 발명에 따른 반도체 박막은, 결정 입자(6)가 격자 모양으로 정렬하고 있다. 또한 결정 입자(6)의 크기는, 레이저광(12)의 발진 파장의 대략 절반이 되고 있다.
Abstract:
A method and system for laser processing targets of different types on a workpiece are provided. The method includes setting a laser pulse width of one or more laser pulses to selectively provide one or more laser output pulses having one or more set pulse widths based on a first type of target to be processed. The method further includes setting a pulse shape of the one or more output pulses to selectively provide the one or more output pulses having the set pulse shape based on the types of targets to be processed. The method still further includes delivering the one or more output pulses having the one or more set pulse widths and the set pulse shape to at least one target of the first type. The method finally includes resetting the laser pulse width of one or more laser pulses to selectively provide one or more laser output pulses having one or more reset pulse widths based on a second type of target to be processed. ® KIPO & WIPO 2009
Abstract:
A multi-laser system is provided to reduce a processing time and to enhance productivity by performing all processing works with only one system. A first laser oscillator(110) outputs a first laser beam. A second laser oscillator(120) outputs a second laser beam. A first scanner couple(131) receives the first laser beam from the first laser oscillator and deflects the first laser beam to a desired position on a substrate. A second scanner couple(132) receives the second laser beam from the second laser oscillator and deflects the second laser beam to a desired position on the substrate. A shuttle unit(150) is arranged between the first laser oscillator and the first scanner couple and between the second laser oscillator and the second scanner couple in order to transmit or shield incident laser beams. A scan lens(140) receives the laser beams through the scanner couples in order to concentrate the laser beams on a spot of a predetermined diameter and to irradiate the concentrated laser beams onto the substrate.
Abstract:
A laser beam irradiation apparatus and a laser beam machining apparatus are provided to perform high accuracy machining by maintaining an acousto-optical device comprising an acousto-optical deflection unit in a temperature predetermined range. A laser beam irradiation apparatus(52) comprises: a laser beam oscillation unit(6) including a pulsed laser beam oscillator(61) for oscillating a pulsed laser beam, and a repetition frequency setting unit(62) for setting a repetition frequency of the pulsed laser beam oscillated from the pulsed laser beam oscillator; an acousto-optical deflection unit(7) including an acousto-optical device(71) for deflecting an optical axis of the pulsed laser beam oscillated from the laser beam oscillation unit, an RF oscillator(72) for applying RF to the acousto-optical device, a deflection angle adjusting unit(74) for adjusting the frequency of the RF outputted from the RF oscillator, and an output adjusting unit(75) for adjusting the amplitude of the RF generated from the RF oscillator; a control unit(8) for controlling the acousto-optical deflection unit and the output adjusting unit; and a condenser(9) for condensing the laser beam deflected by the acousto-optical deflection unit, wherein the control unit, based on a repetition frequency setting signal from the repetition frequency setting unit, outputs to the deflection angle adjusting unit a first driving pulse signal with a predetermined time width comprising the pulse width of the pulsed laser beam oscillated by the pulsed laser beam oscillator, outputs a second driving pulse signal to the output adjusting unit, and outputs to the RF oscillator a correction pulse signal between driving pulses consisting of the first driving pulse signal and the second driving pulse signal.
Abstract:
A system and a method for processing a semiconductor material and an apparatus are provided to realize the characterization of a semiconductor substrate, a monitoring, and a control process by using a focused laser beam. A laser beam of a selected wavelength and a selected peak power is provided(810). The laser beam is modulated so that a pulse having a discontinuous pulse width is provided(820). The laser beam is focused on a surface of a semiconductor material(830). Total energy in each laser pulse is controlled by a selected value(840). The laser beam in a pattern programmed on a surface of the semiconductor material is scanned(850). The semiconductor material is changed. The selected wavelength is between about 140 nm and 3 mum. The discontinuous pulse width is between 10 fm second and 100 mm second. The total energy at every selected pulse is between about 1 micro joule and 1 joule.
Abstract:
A method for removing and modifying a protrusion by using a short pulse laser is provided for modifying a color filter. In a color filter modifying method, a transparent substrate (2) is scanned with a beam in a parallel direction, while irradiating a protrusion (8) generated on the color filters (3-1, 3-2, 3-3) formed on a transparent substrate (2) with a beam collected by a high NA condensing lens (18), and the protrusion (8) is removed or modified.