公开(公告)号：KR1020090079178A

公开(公告)日：2009-07-21

申请号：KR1020090003647

申请日：2009-01-16

Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼

Inventor： 시모무라아키히사 ,  쯔카모토나오키

IPC: H01L21/324 ,  H01L27/12 ,  H01L21/20 ,  H01L21/00

CPC classification number: H01L21/268 ,  B23K26/08 ,  B23K26/123 ,  B23K26/14 ,  B23K26/702 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/84 ,  H01L29/66772 ,  H01L29/78621

Abstract: A laser processing apparatus and a method for manufacturing a semiconductor substrate are provided to obtain a sufficient surface flatness and to improve productivity by reducing the number of shots. A laser processing apparatus includes a laser beam irradiation unit, a nitrogen gas injection unit, and a microwave irradiation unit. The laser beam irradiation unit irradiates a laser beam onto a single crystalline semiconductor layer(1406) which is fixed on a first surface of a supporting substrate by a buffer layer. The nitrogen gas injection unit injects a heated nitrogen gas(307) onto a laser beam irradiation region of the single crystalline semiconductor layer. The microwave irradiation unit irradiates a microwave from a second surface opposing the first surface of the supporting substrate to the single crystalline semiconductor layer.

Abstract translation: 提供一种激光加工装置和半导体基板的制造方法以获得足够的表面平坦度并通过减少拍摄张数提高生产率。 激光加工装置包括激光束照射单元，氮气注入单元和微波照射单元。 激光束照射单元将激光束照射到通过缓冲层固定在支撑基板的第一表面上的单晶半导体层（1406）上。 氮气注入单元将加热的氮气（307）注入到单晶半导体层的激光束照射区域上。 微波照射单元将微波从与支撑基板的第一表面相对的第二表面照射到单晶半导体层。

公开(公告)号：KR101563136B1

公开(公告)日：2015-10-26

申请号：KR1020090003647

申请日：2009-01-16

Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼

Inventor： 시모무라아키히사 ,  쯔카모토나오키

IPC: H01L21/324 ,  H01L27/12 ,  H01L21/20 ,  H01L21/00

CPC classification number: H01L21/268 ,  B23K26/08 ,  B23K26/123 ,  B23K26/14 ,  B23K26/702 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/84 ,  H01L29/66772 ,  H01L29/78621

Abstract: 본발명은, 표면의평탄성이높은단결정반도체층을가지는 SOI 기판을제작한다. 반도체기판에수소를도핑함으로써수소를다량으로포함한손상영역을형성한다. 단결정반도체기판과지지기판을접합시킨후, 반도체기판을가열하고손상영역에서단결정반도체기판을분리한다. 단결정반도체기판으로부터분리된단결정반도체층의박리면에가열한고순도(高純度)의질소가스를분사하고, 마이크로파를조사하면서레이저빔을조사한다. 레이저빔의조사에의하여단결정반도체층을용융시킴으로써, 단결정반도체층의표면의평탄성을향상시키고, 또재단결정화시킨다. 또한질소가스와마이크로파를조사에의하여용융시간을길게하고, 재단결정화를보다효과적으로행한다.