반도체 장치
    1.
    发明授权

    公开(公告)号:KR102255106B1

    公开(公告)日:2021-05-21

    申请号:KR1020140020116

    申请日:2014-02-21

    Abstract: 본발명은대전력용파워디바이스에사용할수 있는, 산화물반도체를포함한반도체장치를제공한다. 전류의주된경로(채널형성영역)로서, n형영역을포함한산화물반도체층을사용하고이 n형영역을포함한산화물반도체층과소스전극층사이에 i형영역을포함한산화물반도체층을제공함으로써, 온전류가크고온 동작과오프동작이확실한트랜지스터를제공한다. 또한, n형영역을포함한산화물반도체층의위 및아래에산화물반도체층의구성원소중 1종류를함유한산화물층을적층시킴으로써, 이적층구조의두께방향의에너지밴드다이어그램에서이중우물구조가형성된다.

    SOI 기판의 제조 방법
    2.
    发明授权
    SOI 기판의 제조 방법 有权
    SOI衬底的制造方法

    公开(公告)号:KR101484490B1

    公开(公告)日:2015-01-20

    申请号:KR1020080099861

    申请日:2008-10-10

    Abstract: 본 발명은 유리기판 등 내열온도가 낮은 기판을 사용한 경우에도, 실용에 견딜 수 있는 단결정 반도체 층을 구비한 반도체 기판의 제조 방법을 제공한다.
    소스 가스를 여기하여 플라즈마를 생성하여, 플라즈마에 포함되는 이온종을 단결정 반도체 기판의 한쪽의 면으로부터 첨가하여, 손상 영역을 형성하고, 단결정 반도체 기판의 한쪽의 면 위에 절연층을 형성하고, 절연층을 사이에 두고 단결정 반도체 기판과 마주 보도록 지지기판을 밀착시켜, 단결정 반도체 기판을 가열함으로써, 손상 영역에서 분리하고, 단결정 반도체 층이 접합된 지지기판과 단결정 반도체 기판과 분리하여, 지지기판에 접합된 단결정 반도체 층의 표면에 대하여, 드라이 에칭을 하고, 단결정 반도체 층에 대하여 레이저 빔을 조사하여, 단결정 반도체 층의 적어도 일부를 용융하는 것으로, 단결정 반도체 층을 재단결정화시킨다.
    단결정 반도체 기판, 단결정 반도체 층, 손상 영역, 지지기판, 실리콘 온 인슐레이터

    반도체 장치
    3.
    发明公开
    반도체 장치 审中-实审
    半导体器件

    公开(公告)号:KR1020140107127A

    公开(公告)日:2014-09-04

    申请号:KR1020140020116

    申请日:2014-02-21

    Abstract: The present invention provides a semiconductor device which includes an oxide semiconductor to be used in a power device for high power. Provided is a transistor which has a large on current and performs the secured on and off operations by using an oxide semiconductor layer including an n-type region as a main path of a current (channel forming region) and providing the oxide semiconductor layer including an i-type region between a source electrode layer and the oxide semiconductor layer including the n-type region. Also, a dual well structure is formed in an energy band diagram in the thickness direction of a laminate structure by laminating an oxide layer including one kind of the component of the oxide semiconductor layer on the lower and upper sides of the oxide semiconductor layer including the n-type region.

    Abstract translation: 本发明提供一种半导体器件,其包括用于高功率的功率器件中的氧化物半导体。 提供一种具有大导通电流的晶体管,并且通过使用包括n型区域作为电流(沟道形成区域)的主要路径的氧化物半导体层来执行固定的开/关操作,并且提供包括 源极电极层和包含n型区域的氧化物半导体层之间的i型区域。 而且,通过在包括氧化物半导体层的氧化物半导体层的下侧和上侧层叠包括一种氧化物半导体层的组分的氧化物层,在层叠结构的厚度方向的能带图中形成双阱结构 n型区域。

    반도체 장치
    4.
    发明公开
    반도체 장치 审中-实审
    半导体器件

    公开(公告)号:KR1020140102151A

    公开(公告)日:2014-08-21

    申请号:KR1020140016162

    申请日:2014-02-12

    Abstract: [OBJECTIVE] Provided is a semiconductor device using an oxide semiconductor suitable for a power device. In other words, provided is a semiconductor device through which a heavy current can flow and that has a high reliability. [SOLUTION] The semiconductor device comprises an oxide-stacked layer where a first oxide layer, a second oxide semiconductor layer, a second oxide semiconductor layer, and a second oxide layer are formed. An electrode, functioning as a source electrode, overlaps with a region with an element that provides conductivity to the first oxide semiconductor layer. Also, an electrode functioning as a drain electrode does not overlap with the region.

    Abstract translation: [目的]提供一种使用适合于功率器件的氧化物半导体的半导体器件。 换句话说,提供了一种半导体器件,通过其可以流过大电流并且具有高可靠性。 [解决方案]半导体器件包括形成第一氧化物层,第二氧化物半导体层,第二氧化物半导体层和第二氧化物层的氧化物堆叠层。 用作源电极的电极与具有向第一氧化物半导体层提供导电性的元件的区域重叠。 此外,用作漏电极的电极不与该区域重叠。

    밀봉체의 제작 방법 및 발광 장치의 제작 방법
    6.
    发明公开
    밀봉체의 제작 방법 및 발광 장치의 제작 방법 审中-实审
    制造密封体的方法和制造发光装置的方法

    公开(公告)号:KR1020130060129A

    公开(公告)日:2013-06-07

    申请号:KR1020120133459

    申请日:2012-11-23

    CPC classification number: H01L33/0095 H01L51/5246

    Abstract: PURPOSE: A method for manufacturing a sealing body and a method for manufacturing a light emitting device are provided to prevent the generation of a crack of a substrate and a frit glass in the overlap region of the start point and the end point of a laser beam. CONSTITUTION: A frit glass layer(500a) is formed on a first substrate(301). A reflecting layer(140) is formed on a second substrate(302). A first area is formed in the reflecting layer. The reflectivity of the first area is lower than that of the second area. The first substrate and the second substrate are arranged to overlap the frit glass layer with the reflecting layer. A laser beam is irradiated to a frit glass layer(500c) to be bonded to the second substrate.

    Abstract translation: 目的:提供一种用于制造密封体的方法和用于制造发光器件的方法,以防止在激光束的起始点和终点的重叠区域中产生基底和熔结玻璃的裂纹 。 构成:在第一基板(301)上形成熔结玻璃层(500a)。 反射层(140)形成在第二基板(302)上。 第一区域形成在反射层中。 第一区的反射率低于第二区。 第一基板和第二基板布置成与玻璃料层与反射层重叠。 将激光束照射到与第二基板接合的熔结玻璃层(500c)上。

    분산 조성물의 가열 방법, 및 글라스 패턴의 형성 방법
    7.
    发明公开
    분산 조성물의 가열 방법, 및 글라스 패턴의 형성 방법 审中-实审
    加热分散组合物的方法和形成玻璃图案的方法

    公开(公告)号:KR1020130044169A

    公开(公告)日:2013-05-02

    申请号:KR1020120116476

    申请日:2012-10-19

    Abstract: PURPOSE: A method for heating a dispersion composition and a method for forming a glass pattern are provided to uniformly heat a bending part by moving a laser along a curved line of frit paste. CONSTITUTION: A laser(150) has a rectangular beam spot. The beam spot shape of the laser has a major axis and a minor axis vertical to the major axis. The angle between a laser scanning direction(103) and the minor axis is in a range of 0-60°. The laser is scanned along a curved line of frit paste(110). A glass frit in the frit paste is partially fused by irradiation of the laser.

    Abstract translation: 目的:提供一种加热分散组合物的方法和用于形成玻璃图案的方法,以通过沿着玻璃料糊的曲线移动激光来均匀加热弯曲部分。 构成:激光(150)具有矩形束斑。 激光束的光斑形状具有垂直于长轴的长轴和短轴。 激光扫描方向(103)与短轴之间的夹角在0-60°的范围内。 沿着玻璃料糊(110)的曲线扫描激光。 玻璃料糊中的玻璃料通过激光的照射被部分熔融。

    반도체 장치의 제조 방법
    8.
    发明公开
    반도체 장치의 제조 방법 有权
    半导体器件的制造方法

    公开(公告)号:KR1020100047849A

    公开(公告)日:2010-05-10

    申请号:KR1020107001685

    申请日:2008-06-18

    Abstract: A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first.

    Abstract translation: 可以使半导体器件的制造方法变小,其中半导体膜转移到多个位置之间的空间。 半导体膜从接合基板向基底基板的转印多次。 在第一次转移的半导体膜和稍后转移的半导体膜相邻地设置的情况下,使用其端部被部分去除的接合基板进行后一种转印。 与用于稍后转印的接合衬底的垂直方向上的宽度相对于被去除端部的接合衬底的区域的宽度大于首先转移的半导体膜的厚度。

    레이저 처리 장치 및 반도체 기판의 제작 방법
    10.
    发明公开
    레이저 처리 장치 및 반도체 기판의 제작 방법 有权
    激光加工装置及制造半导体基板的方法

    公开(公告)号:KR1020090079178A

    公开(公告)日:2009-07-21

    申请号:KR1020090003647

    申请日:2009-01-16

    Abstract: A laser processing apparatus and a method for manufacturing a semiconductor substrate are provided to obtain a sufficient surface flatness and to improve productivity by reducing the number of shots. A laser processing apparatus includes a laser beam irradiation unit, a nitrogen gas injection unit, and a microwave irradiation unit. The laser beam irradiation unit irradiates a laser beam onto a single crystalline semiconductor layer(1406) which is fixed on a first surface of a supporting substrate by a buffer layer. The nitrogen gas injection unit injects a heated nitrogen gas(307) onto a laser beam irradiation region of the single crystalline semiconductor layer. The microwave irradiation unit irradiates a microwave from a second surface opposing the first surface of the supporting substrate to the single crystalline semiconductor layer.

    Abstract translation: 提供一种激光加工装置和半导体基板的制造方法以获得足够的表面平坦度并通过减少拍摄张数提高生产率。 激光加工装置包括激光束照射单元,氮气注入单元和微波照射单元。 激光束照射单元将激光束照射到通过缓冲层固定在支撑基板的第一表面上的单晶半导体层(1406)上。 氮气注入单元将加热的氮气(307)注入到单晶半导体层的激光束照射区域上。 微波照射单元将微波从与支撑基板的第一表面相对的第二表面照射到单晶半导体层。

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