公开(公告)号：KR1020070095211A

公开(公告)日：2007-09-28

申请号：KR1020070026433

申请日：2007-03-19

Applicant: 도쿄엘렉트론가부시키가이샤 ,  도카로 가부시키가이샤

Inventor： 고바야시요시유끼 ,  무라까미다까히로 ,  하라다요시오 ,  다께우찌쥰이찌 ,  야마사끼료오 ,  고바야시게이고

IPC: C23C28/00

CPC classification number: C23C28/042 ,  C23C4/02 ,  C23C4/11 ,  C23C4/18 ,  C23C26/00

Abstract: A ceramic coating member used as a member or a part disposed in a semiconductor processing container to perform a plasma etching process in a corrosive gas atmosphere, and a member which has an excellent durability to plasma erosion in a corrosive gas atmosphere, can suppress the formation of contaminants(particles) and lessens a load for maintaining an apparatus are provided. A ceramic coating member for a semiconductor processing apparatus comprises: a substrate; a porous layer coated on a surface of the substrate and formed of an oxide of an element in Group IIIa of the periodic table of the elements; and a secondary recrystallized layer of the oxide formed on the porous layer. The ceramic coating member comprises an undercoat is disposed between the substrate and the porous layer. The substrate is (1) aluminum and an alloy thereof, titanium and an alloy thereof, stainless steel and other special steels, Ni-based alloy, and other metals and alloys thereof, (2) a ceramic of quartz, glass or an oxide or a carbide, a boride, a silicide, a nitride or a mixture thereof, (3) a cermet of the ceramic and the metal or alloy, (4) plastics, and (5) a metal plating(electroplating, fusion plating, chemical plating) or a metal deposition film formed on surfaces of the materials (1) to (4). The porous layer is an oxide layer of Sc, Y or a lanthanide of atom number 57 to 71(La, Ce, Pr, Nb, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu).

Abstract translation: 用作部件的陶瓷涂层构件或设置在半导体处理容器中以在腐蚀性气体气氛中进行等离子体蚀刻工艺的部件以及在腐蚀性气体气氛中对等离子体侵蚀具有优异耐久性的部件可以抑制形成 的污染物（颗粒）并且减轻用于维持设备的负载。 一种用于半导体处理装置的陶瓷涂层构件包括：基板; 由该元件的周期表第IIIa族元素的氧化物形成在该表面上的多孔层， 和形成在多孔层上的氧化物的二次再结晶层。 陶瓷涂层构件包括在基底和多孔层之间设置底涂层。 基材是（1）铝及其合金，钛及其合金，不锈钢等特殊钢，镍基合金等金属及其合金，（2）石英，玻璃或氧化物的陶瓷， 碳化物，硼化物，硅化物，氮化物或其混合物，（3）陶瓷的金属陶瓷和金属或合金，（4）塑料，（5）金属电镀（电镀，电镀，化学镀 ）或形成在材料（1）至（4）的表面上的金属沉积膜。 多孔层是原子数为57〜71（La，Ce，Pr，Nb，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu）的Sc，Y或镧系元素的氧化物层 ）。

公开(公告)号：KR100939403B1

公开(公告)日：2010-01-28

申请号：KR1020070026433

申请日：2007-03-19

Applicant: 도쿄엘렉트론가부시키가이샤 ,  도카로 가부시키가이샤

Inventor： 고바야시요시유끼 ,  무라까미다까히로 ,  하라다요시오 ,  다께우찌쥰이찌 ,  야마사끼료오 ,  고바야시게이고

IPC: C23C28/00

CPC classification number: C23C28/042 ,  C23C4/02 ,  C23C4/11 ,  C23C4/18 ,  C23C26/00

Abstract: 본 발명은 강한 부식성 환경 하에서 플라즈마 에칭 가공이 행해지는 반도체 가공용 장치 등의 용기 내 배치 부재의 내구성의 향상을 도모하는 것이다.
금속제 또는 비금속제 기재의 표면에 직접 또는 하부 코트층을 거쳐서, 주기율표 IIIa족 산화물의 용사 피막으로 이루어지는 다공질층을 갖고, 그 층 상에는 전자 빔 고에너지를 조사 처리에 의해 형성되는 2차 재결정층이 형성되어 이루어지는 세라믹 피복 부재이다.
기재, 다공질층, 입자계면, 관통 기공, 하부 코트, 2차 재결정층

公开(公告)号：KR1020090035676A

公开(公告)日：2009-04-10

申请号：KR1020090024410

申请日：2009-03-23

Applicant: 도쿄엘렉트론가부시키가이샤 ,  도카로 가부시키가이샤

Inventor： 고바야시요시유끼 ,  무라까미다까히로 ,  하라다요시오 ,  다께우찌쥰이찌 ,  야마사끼료오 ,  고바야시게이고

IPC: C23C4/10 ,  C23C4/18 ,  H01L21/304

CPC classification number: C23C28/042 ,  C23C4/02 ,  C23C4/11 ,  C23C4/18 ,  C23C26/00

Abstract: A ceramics coated member for a semiconductor processing device is provided to suppress the generation of contaminant and to improve the durability. A ceramics coated member for a semiconductor processing device comprises: a substrate; and a porous layer consisting of the oxide of the IIIa group element of the periodic table coated onto the surface of the materials. A base coat is formed between the materials and the porous layer. The porous layer is made of sc or Y. The porous layer has the layer thickness of about 50~2000mum. The porosity layer is made of the sprayed coating which is about 5 through 20%.

Abstract translation: 提供了一种用于半导体处理装置的陶瓷涂覆部件，以抑制污染物的产生并提高耐久性。 一种用于半导体处理装置的陶瓷涂覆部件，包括：基板; 以及由周期表的IIIa族元素的氧化物涂覆在材料表面上的多孔层。 在材料和多孔层之间形成底涂层。 多孔层由sc或Y制成。多孔层的厚度约为50〜2000μm。 孔隙层由约5至20％的喷涂涂层制成。