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    수지, 레지스트 조성물 및 레지스트 패턴의 제조 방법
    2.
    发明公开
    수지, 레지스트 조성물 및 레지스트 패턴의 제조 방법 有权
    树脂，耐蚀组合物和生产耐火图案的方法

    公开(公告)号：KR1020110023839A

    公开(公告)日：2011-03-08

    申请号：KR1020100084571

    申请日：2010-08-31

    申请人： 스미또모 가가꾸 가부시키가이샤

    发明人： 이찌까와,고지 ,  가마부찌,아끼라 ,  무까이,유이찌

    IPC分类号： C08F20/52 ,  C08F22/40 ,  G03F7/004 ,  H01L21/027

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/30 ,  C08F220/60 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/20 ,  G03F7/2041 ,  C08F20/52 ,  C08F22/40 ,  G03F7/0047 ,  H01L21/027

    摘要： PURPOSE: A resin and a resist composition is provided to form patterns with excellent pattern form and wide focus margin(DOF). CONSTITUTION: A resin comprises a structural unit derived from a compound represented by the formula (I), wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that optionally has one or more halogen atoms; and X1 represents a C2 to C36 heterocyclic group, one or more hydrogen atoms contained in the heterocyclic group may be replaced by a halogen atom, a hydroxy group, a C1 to C24 hydrocarbon group, a C1 to C12 alkoxyl group, a C2 to C4 acyl group, or a C2 to C4 acyloxy group, and one or more -CH2- contained in the heterocyclic group may be replaced by -CO- or -O-.

    摘要翻译： 目的：提供树脂和抗蚀剂组合物以形成具有优异图案形式和宽焦距（DOF）的图案。 构成：树脂包含衍生自由式（I）表示的化合物的结构单元，其中R 1表示氢原子，卤素原子或任选具有一个或多个卤素原子的C 1至C 6烷基; X1表示C2〜C36杂环基，杂环基中含有的一个以上氢原子可以被卤素原子，羟基，C1〜C24烃基，C1〜C12烷氧基，C2〜C4 酰基或C2〜C4酰氧基，杂环基中所含的一个或多个-CH 2可以被-CO-或-O-代替。

    레지스트 조성물 및 레지스트 패턴의 제조 방법
    5.
    发明公开
    레지스트 조성물 및 레지스트 패턴의 제조 방법 审中-实审
    耐蚀组合物及其制造方法

    公开(公告)号：KR1020120115138A

    公开(公告)日：2012-10-17

    申请号：KR1020120035939

    申请日：2012-04-06

    申请人： 스미또모 가가꾸 가부시키가이샤

    发明人： 이찌까와,고지 ,  야스에,다까히로 ,  무까이,유이찌

    IPC分类号： G03F7/038 ,  G03F7/004

    CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/029 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/092 ,  G03F7/2041 ,  G03F7/004 ,  G03F7/038 ,  G03F7/0382

    摘要： PURPOSE: A resist composition and a resist pattern manufacturing method using the same are provided to implement fine operational processes for semiconductors. CONSTITUTION: A resist composition includes a resin, an acid generator represented by chemical formula II, and a compound represented by chemical formula I. The resin is insoluble or hardly soluble to an alkali aqueous solution and becomes soluble to the alkali aqueous solution by the action of acid. In chemical formula I, R1 and R2 are respectively C1-C12 hydrocarbon groups, C1-C6 alkoxy groups, C2-C7 acyl groups, C2-C7 acyloxy groups, C2-C7 alkoxycarbonyl groups, nitro groups, or halogen atoms; and m and n are the integer of 0 to 4, respectively. In chemical formula II, R3 and R4 are respectively fluorine atoms or C1-C6 perfluoroalkyl groups; X1 is C1-C17 divalent saturated hydrocarbon groups, and one or more hydrogen atoms in the divalent saturated hydrocarbon groups are substitutable with fluorine atoms and one or more -CH_2- in the divalent saturated hydrocarbon groups are substitutable with -O- or -CO-; R5 is a group including a cyclic ether structure; and Z+ is an organic cation.

    摘要翻译： 目的：提供一种抗蚀剂组合物和使用其的抗蚀剂图案制造方法，以实现半导体的精细操作过程。 构成：抗蚀剂组合物包括树脂，由化学式II表示的酸产生剂和由化学式I表示的化合物。该树脂不溶于或几乎不溶于碱性水溶液，并通过作用而溶于碱性水溶液 的酸。 在化学式I中，R1和R2分别为C1-C12烃基，C1-C6烷氧基，C2-C7酰基，C2-C7酰氧基，C2-C7烷氧基羰基，硝基或卤原子; m和n分别为0〜4的整数。 在化学式II中，R3和R4分别是氟原子或C1-C6全氟烷基; X1是C1-C17二价饱和烃基，二价饱和烃基中的一个或多个氢原子可与氟原子取代，二价饱和烃基中的一个或多个-CH 2 - 可以被-O-或-CO- ; R5是包含环醚结构的基团; Z +是有机阳离子。

    레지스트 조성물 및 레지스트 패턴의 제조 방법
    6.
    发明公开
    레지스트 조성물 및 레지스트 패턴의 제조 방법 审中-实审
    耐蚀组合物及其制造方法

    公开(公告)号：KR1020120098479A

    公开(公告)日：2012-09-05

    申请号：KR1020120018902

    申请日：2012-02-24

    申请人： 스미또모 가가꾸 가부시키가이샤

    发明人： 이찌까와,고지 ,  무까이,유이찌 ,  야마모또,사또시

    IPC分类号： G03F7/038 ,  G03F7/26

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/124 ,  Y10S430/126

    摘要： PURPOSE: A resist composition and a method for manufacturing resist patterns using the same are provided to reduce the defects of the resist patterns. CONSTITUTION: A resist composition includes a resin with a structural unit represented by chemical formula I, a resin which is insoluble or hardly soluble with respect to an alkali aqueous solution and is capable of being dissolved in the alkali aqueous solution by the action of acid; and an acid generator represented by chemical formula II. In chemical formula I, R1 is a hydrogen atom or a methyl group; A1 is a C1-6 alkandiyl group; and R2 is a C1-10 hydrocarbon group with a fluorine atom. In chemical formula II, R3 and R4 are respectively fluorine atoms or C1-6 perfluoroalkyl groups; X1 is a divalent C1-17 saturated hydrocarbon group, and hydrogen atoms in the divalent saturated hydrocarbon group are substitutable with fluorine atoms and -CH_2- in the divalent saturated hydrocarbon group is substitutable with -O- or -CO-; R5 is a group with a cyclic ether structure; and Z^1+ is an organic cation.

    摘要翻译： 目的：提供抗蚀剂组合物和使用其制造抗蚀剂图案的方法以减少抗蚀剂图案的缺陷。 构成：抗蚀剂组合物包括具有由化学式I表示的结构单元的树脂，相对于碱性水溶液不溶或难溶的树脂，能够通过酸的作用溶解在碱性水溶液中; 和由化学式II表示的酸发生剂。 在化学式I中，R 1是氢原子或甲基; A1是C1-6烷撑基; R2是具有氟原子的C1-10烃基。 在化学式II中，R3和R4分别是氟原子或C1-6全氟烷基; X1是二价C1-17饱和烃基，二价饱和烃基中的氢原子可以与氟原子取代，二价饱和烃基中的-CH 2 - 可以被-O-或-CO-取代; R5是具有环醚结构的基团; Z ^ 1 +是有机阳离子。

    레지스트 조성물 및 레지스트 패턴의 제조 방법
    10.
    发明公开
    레지스트 조성물 및 레지스트 패턴의 제조 방법 审中-实审
    耐蚀组合物及其制造方法

    公开(公告)号：KR1020130010859A

    公开(公告)日：2013-01-29

    申请号：KR1020120078206

    申请日：2012-07-18

    申请人： 스미또모 가가꾸 가부시키가이샤

    发明人： 이찌까와,고지 ,  무까이,유이찌 ,  야마모또,사또시

    IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/20

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/004 ,  G03F7/0382 ,  G03F7/2002 ,  G03F7/26

    摘要： PURPOSE: A resist composition and a manufacturing method of a resist pattern are provide to be used in a semiconductor micro processing by having less pattern collapse and defects. CONSTITUTION: A resist composition comprises a resin which has a structure unit indicated in chemical formula 1 and comprises an insoluble or poorly soluble into an alkali water solution but can be soluble into the alkali water solution by acid, and comprises a resin which does not comprises a resin indicated in chemical formula 1, and an acid-generator which is indicated in chemical formula 2. In chemical formula 1, R1 is hydrogen or a methyl group, A1 is a C1-C6 alkanediyl group, A13 is a C1-C18 divalent aliphatic hydrocarbon group which can have one or more halogen atoms. X12 is *-CO-O- or *-O-CO-, where * is a bond to A13, and A14 is a C1-C17 aliphatic hydrocarbon group which can have one or more halogen atoms. In chemical formula 2, each of R23 and R24 is independently a fluorine atom or a C1-C6 perfluoroalkyl, and X21 is a C1-C17 divalent saturated hydrocarbon group in which one or more hydrogen atom can be substituted by a fluorine atom and one or more -CH2- can be substituted by -O- or -CO-, and R25 is a group which has an ether structure ring.

    摘要翻译： 目的：抗蚀剂组合物和抗蚀剂图案的制造方法通过具有较少的图案塌陷和缺陷而被用于半导体微处理。 构成：抗蚀剂组合物包含具有化学式1所示结构单元的树脂，其包含不溶于或难溶于碱水溶液但可通过酸溶于碱水溶液中的树脂，并且包含不包含 化学式1表示的树脂和化学式2表示的酸发生剂。在化学式1中，R1是氢或甲基，A1是C1-C6烷二基，A13是C1-C18二价 可以具有一个或多个卤素原子的脂族烃基。 X12是* -CO-O-或* -O-CO-，其中*是与A13的键，A14是可以具有一个或多个卤素原子的C 1 -C 17脂族烃基。 在化学式2中，R 23和R 24各自独立地为氟原子或C 1 -C 6全氟烷基，X 21为C 1 -C 17二价饱和烃基，其中一个或多个氢原子可被氟原子取代， 更多的-CH 2 - 可以被-O-或-CO-取代，R 25是具有醚结构环的基团。