레지스트 조성물 및 레지스트 패턴의 제조 방법
    1.
    发明公开
    레지스트 조성물 및 레지스트 패턴의 제조 방법 审中-实审
    耐蚀组合物及其制造方法

    公开(公告)号:KR1020120098480A

    公开(公告)日:2012-09-05

    申请号:KR1020120018904

    申请日:2012-02-24

    IPC分类号: G03F7/038 G03F7/26

    摘要: PURPOSE: A resist composition and a method for manufacturing resist patterns using the same are provided to reduce the defects of the resist patterns and to improve the line edge roughness of the resist patterns. CONSTITUTION: A resist composition includes a resin with a structural unit represented by chemical formula I, a resin which is insoluble or hardly soluble in an alkali aqueous solution by the action of acid; an acid generator, and a compound represented by chemical formula II. In chemical formula I, R1 is a hydrogen atom or a methyl group; A1 is a C1-6 alkandiyl group; and R2 is a C1-10 hydrocarbon group with a fluorine atom. In chemical formula II, R3 and R4 are respectively C1-12 hydrocarbon groups, C1-6 alkoxy groups, C2-7 acyl groups, C2-7 acyloxy groups, C2-7 alkoxycarbonyl groups, nitro groups, or halogen atoms; m' and n' are respectively the integer of 0 to 4; if m' is 2 or more, a plurality of R3s are identical or different; and If n'2 is 2 or more, a plurality of R4s are identical or different.

    摘要翻译: 目的:提供抗蚀剂组合物和使用其制造抗蚀剂图案的方法,以减少抗蚀剂图案的缺陷并改善抗蚀剂图案的线边缘粗糙度。 构成:抗蚀剂组合物包括具有由化学式I表示的结构单元的树脂,其是通过酸作用而不溶于或难溶于碱性水溶液的树脂; 酸产生剂和由化学式II表示的化合物。 在化学式I中,R 1是氢原子或甲基; A1是C1-6烷撑基; R2是具有氟原子的C1-10烃基。 在化学式II中,R3和R4分别为C1-12烃基,C1-6烷氧基,C2-7酰基,C2-7酰氧基,C2-7烷氧基羰基,硝基或卤素原子; m'和n'分别为0〜4的整数; 如果m'为2以上,则多个R3相同或不同; 如果n'2为2以上,则多个R4相同或不同。

    레지스트 조성물 및 레지스트 패턴의 제조 방법

    公开(公告)号:KR101855526B1

    公开(公告)日:2018-06-08

    申请号:KR1020120018893

    申请日:2012-02-24

    IPC分类号: G03F7/004 G03F7/26

    摘要: 레지스트조성물은 (A) 화학식 (I)로표시되는구조단위를갖는수지, (B) 산발생제, 및 (D) 화학식 (II)로표시되는화합물을함유한다.(식중, R은수소원자, 할로겐원자또는하나이상의할로겐원자를가질수도있는 C내지 C의알킬기를나타내고; 환 X은 C내지 C의헤테로시클릭기를나타내며, 상기헤테로시클릭기중 함유된하나이상의수소원자는할로겐원자, 히드록시기, C내지 C의탄화수소, C내지 C의알콕시기, C내지 C의아실기또는 C내지 C의아실옥시기로치환될수 있고; R및 R는각 경우독립적으로 C내지 C의탄화수소기, C내지 C의알콕시기, C내지 C의아실기, C내지 C의아실옥시기, C내지 C의알콕시카르보닐기, 니트로기또는할로겐원자를나타내고; m 및 n은독립적으로 0 내지 4의정수를나타냄)

    레지스트 조성물 및 레지스트 패턴의 제조 방법
    6.
    发明公开
    레지스트 조성물 및 레지스트 패턴의 제조 방법 审中-实审
    耐蚀组合物及其制造方法

    公开(公告)号:KR1020120098473A

    公开(公告)日:2012-09-05

    申请号:KR1020120018893

    申请日:2012-02-24

    IPC分类号: G03F7/004 G03F7/26

    摘要: PURPOSE: A resist composition and a method for manufacturing resist patterns using the same are provided to sufficiently widen the focus margin of the resist patterns. CONSTITUTION: A resist composition includes a resin with a structural unit represented by chemical formula I, an acid generator, and a compound represented by chemical formula II. In chemical formula I, R1 is a hydrogen atom, a halogen atom, or a C1-6 alkyl group with/without one or more halogen atoms; X1 is a C2-36 heterocyclic group, and one or more hydrogen atoms in the heterocyclic group is substitutable with a halogen atom, a hydroxyl group, a C1-24 hydrocarbon group, a C1-C12 alkoxy group, a C2-4 acyl group, or a C2-4 acyloxy group. In chemical formula II, R3 and R4 are respectively C1-12 hydrocarbon groups, C1-6 alkoxy groups, C2-7 acyl groups, C2-7 acyloxy groups, C2-7 alkoxycarbonyl groups, nitro groups, or halogen atoms; and m and n are respectively the integer of 0 to 4.

    摘要翻译: 目的:提供抗蚀剂组合物和使用其制造抗蚀剂图案的方法,以充分加宽抗蚀剂图案的聚焦边缘。 构成:抗蚀剂组合物包括具有由化学式I表示的结构单元的树脂,酸产生剂和由化学式II表示的化合物。 在化学式I中,R 1为氢原子,卤素原子或具有或不具有一个或多个卤素原子的C 1-6烷基; X1是C2-36杂环基,杂环基中的一个或多个氢原子可以与卤素原子,羟基,C1-24烃基,C1-C12烷氧基,C2-4酰基取代 ,或C 2-4的酰氧基。 在化学式II中,R3和R4分别为C1-12烃基,C1-6烷氧基,C2-7酰基,C2-7酰氧基,C2-7烷氧基羰基,硝基或卤素原子; m和n分别为0〜4的整数。

    레지스트 조성물 및 레지스트 패턴의 제조 방법
    8.
    发明授权
    레지스트 조성물 및 레지스트 패턴의 제조 방법 有权
    抗蚀剂组合物和用于产生抗蚀剂图案的方法

    公开(公告)号:KR101837203B1

    公开(公告)日:2018-03-09

    申请号:KR1020120035935

    申请日:2012-04-06

    IPC分类号: G03F7/038 G03F7/004

    摘要: 레지스트조성물은 (A) 알칼리수용액에불용성또는난용성이지만산의작용에의해알칼리수용액에가용성이되는수지, (B) 알칼리현상제의작용에의해절단되는구조를갖는산발생제, 및 (C) 화학식 (I)로표시되는화합물을포함한다.(식중, R및 R는각 경우독립적으로 C내지 C의탄화수소기, C내지 C의알콕시기, C내지 C의아실기, C내지 C의아실옥시기, C내지 C의알콕시카르보닐기, 니트로기또는할로겐원자를나타내고; m 및 n은독립적으로 0 내지 4의정수를나타냄)

    摘要翻译: (A)在碱性水溶液中不溶或难溶但通过酸的作用可溶于碱性水溶液的树脂,(B)具有在碱性显影剂作用下裂解的结构的酸产生剂,和(C) (I)的化合物,其中R和R独立地为C至C的烃基,C至C的烷氧基,C至C的酰基,C至C的酰氧基, C,烷氧基羰基,硝基或卤素原子; m和n独立地表示0至4的数)

    레지스트 조성물 및 레지스트 패턴의 제조 방법
    9.
    发明公开
    레지스트 조성물 및 레지스트 패턴의 제조 방법 审中-实审
    耐蚀组合物及其制造方法

    公开(公告)号:KR1020120115136A

    公开(公告)日:2012-10-17

    申请号:KR1020120035935

    申请日:2012-04-06

    IPC分类号: G03F7/038 G03F7/004

    摘要: PURPOSE: A resist composition and a resist pattern manufacturing method using the same are provided to include a structure which is cut by the action of an alkali developer in the acid generator. CONSTITUTION: A resist composition includes a resin, an acid generator, and a compound represented by chemical formula I. The resin is insoluble or hardly soluble to an alkali aqueous solution and becomes soluble to the alkali aqueous solution by the action of acid. The acid generator has a structure which is cut by the action of an alkali developer. In chemical formula I, R1 and R2 are respectively C1 t C12 hydrocarbon groups, C1 to C6 alkoxy groups, C2 to C7 acyl groups, C2 to C7 acyoxy groups, C2 to C7 alkoxycarbonyl groups, nitro groups, or halogen atoms; and m and n are respectively the integers of 0 to 4. The structure is a group represented by chemical formula Ba or Bb. In chemical formulas Ba and Bb, R3 is a C1 to C6 alkyl group with fluorine atoms; and R5 and R6 are respectively hydrogen atoms or fluorine atoms.

    摘要翻译: 目的:提供一种抗蚀剂组合物和使用其的抗蚀剂图案制造方法,其包括通过酸产生剂中的碱性显影剂的作用而切割的结构。 构成:抗蚀剂组合物包括树脂,酸产生剂和由化学式I表示的化合物。该树脂不溶于或几乎不溶于碱性水溶液,并通过酸作用而溶于碱性水溶液中。 酸产生剂具有通过碱显影剂的作用而被切割的结构。 在化学式I中,R 1和R 2分别为C 1 -C 12烃基,C 1至C 6烷氧基,C 2至C 7酰基,C 2至C 7酰氧基,C 2至C 7烷氧基羰基,硝基或卤素原子; m和n分别为0〜4的整数。该结构是由化学式Ba或Bb表示的基团。 在化学式Ba和Bb中,R3是具有氟原子的C1-C6烷基; R5和R6分别是氢原子或氟原子。