Abstract:
A sputtering target or ion-plating tablet with which high-rate and nodule-less deposition can be realized; an oxide sinter optimal for obtaining the target or tablet; a process for producing the sinter; and a low-resistivity transparent conductive film obtained from the target or tablet and reduced in blue-light absorption. The oxide sinter comprises indium and gallium in the form of oxides, and is characterized in that it includes an InOphase of a bixbite structure as the main crystal phase and that either a GaInOphase of a β-GaOtype structure or a combination of a GaInOphase and a (Ga,In)Ophase is finely dispersed in the main crystal phase as crystal grains having an average grain diameter of 5 μm or smaller. The oxide sinter is further characterized by having a gallium content of 10-35 at.%, excluding 35 at.%, in terms of Ga/(In+Ga) atom number ratio.
Abstract:
An oxide sinter which comprises zinc oxide as the main component and further contains magnesium; a target obtained by processing the sinter; a transparent conductive film obtained from the target by direct-current sputtering or ion plating which has excellent chemical resistance and a low resistance; and a transparent conductive base. The oxide sinter comprises zinc oxide and magnesium and has a magnesium content of 0.02-0.30 in terms of Mg/(Zn+Mg) atom number ratio. Also provided is the oxide sinter which further contains gallium and/or aluminum in such an amount that the content of these is 0-0.08, excluding 0, in terms of (Ga+Al)/(Zn+Ga+Al) atom number ratio and the content of magnesium is 0.02-0.30 in terms of Mg/(Zn+Ga+Al+Mg) atom number ratio. The target is obtained by processing any of these oxide sinters. The transparent conductive film is formed from this target on a substrate by sputtering or ion plating.
Abstract translation:一种氧化物烧结体,其包含氧化锌作为主要成分并且还含有镁; 通过处理烧结体获得的靶; 通过直接溅射或离子镀从靶获得的透明导电膜具有优异的耐化学性和低电阻; 和透明导电基底。 氧化物烧结体包含氧化锌和镁,按Mg /(Zn + Mg)原子数比计,镁含量为0.02-0.30。 还提供氧化物烧结体,其还包含镓和/或铝,其含量按照(Ga + Al)/(Zn + Ga + Al)原子数比例计,其含量为0-0.08(不包括0) 以Mg /(Zn + Ga + Al + Mg)原子数比表示,镁的含量为0.02〜0.30。 通过处理任何这些氧化物烧结体获得靶。 通过溅射或离子电镀在该基板上由该靶形成透明导电膜。
Abstract:
PURPOSE: A capacitive touch panel, a manufacturing method thereof and a liquid crystal display apparatus provided with the capacitive touch panel are provided to enable high quality display without a problem of position detection, even in the case where a production process with lower cost and higher heat load is adopted by application of a transparent conductive film with high heat resistance. CONSTITUTION: A resistive touch panel(10) is provided with an upper part transparent substrate(11), an upper part transparent conductive film(12) formed on a surface of the upper part transparent substrate, a lower part transparent substrate(14), and a lower part transparent conductive film(15) formed onto the surface of the lower part transparent substrate and arranged facing to the upper part transparent conductive film. At the outer circumference part of the upper part transparent substrate and the lower part transparent substrate, a pressure sensitive adhesive double coated tape is adhered to specify distance between the upper part transparent conductive film and the lower part transparent conductive film, and fix the upper part transparent substrate and the lower part transparent substrate, and in this way an air layer(16) is formed. In addition, the liquid crystal display apparatus is configured by mounting the resistive touch panel onto a liquid crystal display apparatus main body(50). The transparent conductive films are required to have high heat resistance, and in order to attain this, it must be an oxide having indium oxide as a main component and containing gallium and tin. It is preferable that composition of the transparent conductive films is indium oxide as a main component, and gallium content of the transparent conductive film is 0.03 to 0.10 as atomic ratio of Ga/(In+Ga+Sn), and tin content is 0.05 to 0.12 as atomic ratio of Sn/(In+Ga+Sn).
Abstract:
주성분으로 산화아연을 가지고 마그네슘을 더 포함하는 산화물 소결체, 이를 가공하여 제조되는 타겟, 이를 사용한 직류 스퍼터링 법 또는 이온 플레이팅 법에 의해 제조되는 우수한 내약품성과 낮은 저항을 가지는 투명 도전막과 투명 도전성 기재를 제공한다. 산화아연과 마그네슘을 포함하고, 상기 마그네슘의 함유량은 Mg/(Zn+Mg) 원자수비(atomic number ratio)가 0.02 내지 0.30인 산화물 소결체; 산화아연, 마그네슘, 갈륨 및/또는 알루미늄을 포함하며, 상기 갈륨 및/또는 알루미늄의 함유량은 (Ga+Al)/(Zn+Ga+Al) 원자수비로 0 초과 내지 0.09 이하이며, 상기 마그네슘의 함유량은 Mg/(Zn+Ga+Al+Mg) 원자수비로 0.02 내지 0.30인 산화물 소결체; 이 산화물 소결체들을 가공하여 제조된 타겟; 및 이 타겟을 사용하고, 스퍼터링 법 또는 이온 플레이팅 법으로 기판 위에 형성되는 투명 도전막을 제공한다.