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公开(公告)号:KR1019900003087B1
公开(公告)日:1990-05-07
申请号:KR1019880002777
申请日:1988-03-16
申请人: 시나가와 시로렝가 가부시키가이샤
CPC分类号: C04B35/622 , C04B33/32 , C04B35/64 , F27D1/0006 , F27D3/12 , F27D5/00 , Y10T428/24372 , Y10T428/24413 , Y10T428/24421 , Y10T428/2443
摘要: A two-layered refractory plate is produced by the stages of partially embedding grains of magnesia, spinel, zirconia, alumina, silica, chromium oxide, SiC, Sinitride, C or picrochromite on a substrate of at least one of magnesia, spinel, mullite, zirconia, zircon, alumina, chamotte, cordierite, silicon carbide and silicon nitride, sintering it at 1000-1800 deg C.
摘要翻译: 通过将氧化镁,尖晶石,氧化锆,氧化铝,二氧化硅,氧化铬,碳化硅,中氮化物,碳化铬或微晶碳酸盐的颗粒部分地包埋在氧化镁,尖晶石,莫来石中的至少一种的基体上, 氧化锆,锆石,氧化铝,氯化钠,堇青石,碳化硅和氮化硅,在1000-1800℃烧结
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