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    석영 튜브 세정액 조성물 및 이를 이용한 세정 방법
    9.
    发明公开
    석영 튜브 세정액 조성물 및 이를 이용한 세정 방법 有权
    QUARTZ管清洁溶液和使用其清洁的方法

    公开(公告)号：KR1020100050227A

    公开(公告)日：2010-05-13

    申请号：KR1020080109419

    申请日：2008-11-05

    申请人： 에스케이하이닉스 주식회사 ,  영창케미칼 주식회사

    发明人： 이근수 ,  길명군 ,  박동수 ,  기영종 ,  이병국 ,  신동국 ,  이승훈

    IPC分类号： C11D7/10 ,  C11D11/00 ,  C11D7/50 ,  C11D7/08 ,  C11D1/66 ,  C11D1/72

    CPC分类号： C11D7/10 ,  C11D1/72 ,  C11D7/08 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0041 ,  C11D11/0052 ,  C11D11/0064

    摘要： PURPOSE: A cleaning solution for a quartz tube and a cleaning method using thereof are provided to minimize the surface damage of the quartz tube while uniformly cleaning polysilicon, and to reduce the manufacturing cost of a semiconductor device including thereof. CONSTITUTION: A cleaning solution for a quartz tube contains a halide ammonium salt compound and acid. The halide ammonium salt compound is either NH_4X or NH_4HX_2. X refers to a halogen element. 1~50wt% of halide ammonium salt compound is contained in the cleaning solution. The acid is selected form the group consisting of inorganic acid including nitric acid and phosphoric acid, or an organic acid including acetic acid. A cleaning method using the cleaning solution comprises a step of cleaning the quartz tube with the solution and washing the tube with distilled water.

    摘要翻译： 目的：提供一种用于石英管的清洁溶液及其使用的清洁方法，以在均匀清洁多晶硅的同时最小化石英管的表面损伤，并降低包括其的半导体器件的制造成本。 构成：用于石英管的清洁溶液含有卤化铵盐化合物和酸。 卤化铵盐化合物是NH_4X或NH_4HX_2。 X是指卤素元素。 1〜50重量％的卤化铵盐化合物被包含在清洁溶液中。 酸选自包括硝酸和磷酸的无机酸或包括乙酸的有机酸组成的组。 使用清洁溶液的清洗方法包括用溶液清洗石英管并用蒸馏水洗涤管的步骤。

    반도체 소자의 패턴 형성 방법
    10.
    发明公开
    반도체 소자의 패턴 형성 방법 有权
    形成半导体器件图案的方法

    公开(公告)号：KR1020090082675A

    公开(公告)日：2009-07-31

    申请号：KR1020080008578

    申请日：2008-01-28

    申请人： 에스케이하이닉스 주식회사 ,  영창케미칼 주식회사

    发明人： 이근수 ,  이승훈

    IPC分类号： H01L21/027 ,  H01L21/302

    CPC分类号： H01L21/0274 ,  G03F1/80 ,  H01L21/0337 ,  H01L21/302

    摘要： A pattern formation method of a semiconductor device for implementing pattern having the size which is smaller than a lithography is provided to reduce a size between patterns without using additional hard mask. A pattern formation method of a semiconductor device is as follows. A photo-resist pattern(14) is formed at the upper part of the etched layer on a semiconductor substrate(10). A water soluble polymer layer(16) in which the photo-resist pattern comparison etch rate is fast is formed over the photo-resist pattern height on the upper part of the etched layer including the photo-resist pattern. The first etching process is performed in the water soluble polymer layer. The etched layer pattern is formed. The photo-resist pattern and the water soluble polymer layer remaining in the etched layer pattern upper are removed.

    摘要翻译： 提供用于实现尺寸小于光刻的图案的半导体器件的图案形成方法，以减少图案之间的尺寸，而不使用额外的硬掩模。 半导体器件的图案形成方法如下。 在半导体衬底（10）上的蚀刻层的上部形成光刻胶图形（14）。 在包含光致抗蚀剂图案的蚀刻层的上部的光致抗蚀剂图案高度上形成光致抗蚀剂图案比较蚀刻速率快的水溶性聚合物层（16）。 第一蚀刻工艺在水溶性聚合物层中进行。 形成蚀刻层图案。 去除残留在蚀刻层图案上的光致抗蚀剂图案和水溶性聚合物层。