公开(公告)号：US6159775A

公开(公告)日：2000-12-12

申请号：US315011

申请日：1999-05-20

申请人： Akagi Kazuto ,  Yasushi Umeda ,  Mitsuyuki Kakimoto

发明人： Akagi Kazuto ,  Yasushi Umeda ,  Mitsuyuki Kakimoto

IPC分类号： H01L23/495 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/49582 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

摘要： An object of this invention is to effectively prevent a progress of corrosion due to a local cell produced between a copper raw material (30) of a lead frame and a plating layer (29) on the surface, secure an anchor effect necessary for a chip loading surface without providing a palladium or palladium alloy film (29) with an excessive thickness and improve the reliability of a semiconductor device while achieving a reduction of production cost of a semiconductor device.Ground plating layers (27), (28) of multilayer structure of nickel are formed entirely on the surface of the raw material and then the palladium or palladium alloy plating layer (29) is formed on the surface thereof. A first ground plating layer (27) is formed so as to have an elaborate quality by supplying a DC current of a predetermined current value thereto as a plating current. A second ground plating layer (28) is formed so as to have a precedence in growth of crystal in the vertical direction by supplying a current such as a pulse current, in which its current value changes as a plating current.

摘要翻译： 本发明的目的是有效地防止在引线框架的铜原料（30）和表面上的镀层（29）之间产生的局部电池的腐蚀进程，确保芯片所需的锚固效果 不提供过厚度的钯或钯合金膜（29），并提高半导体器件的可靠性，同时实现半导体器件的生产成本的降低。 镍的多层结构的接地电镀层（27），（28）完全形成在原料的表面上，然后在其表面上形成钯或钯合金镀层（29）。 通过向其提供预定电流值的直流电流作为电镀电流，形成第一接地电镀层（27）以具有精细的质量。 形成第二接地电镀层（28），以通过提供其电流值作为电镀电流而变化的诸如脉冲电流的电流在垂直方向上具有优先的晶体生长。