公开(公告)号：US20240363566A1

公开(公告)日：2024-10-31

申请号：US18139896

申请日：2023-04-26

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Wang Gu Lee ,  Ju Hong Shin ,  Ji Hun Lee

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L24/08 ,  H01L21/4857 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/05 ,  H01L24/80 ,  H01L23/49894 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03845 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05562 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/80013 ,  H01L2224/80203 ,  H01L2224/80357 ,  H01L2224/80379 ,  H01L2224/80815 ,  H01L2224/80896 ,  H01L2224/80905 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0504 ,  H01L2924/05442 ,  H01L2924/059

摘要： In one example, an electronic device, comprises a first component comprising a first component inner side and a first component backside, a first component inner terminal, a first component dielectric at the first component inner side, and a first component interconnect coupled with the first component inner terminal. The electronic device comprises a second component over the first component and comprising a second component inner side facing the first component inner side, and a second component backside, a second component inner terminal, a second component dielectric at the second component inner side, and a second component interconnect coupled with the second component inner terminal. The first component dielectric and the second component dielectric comprise an inorganic material, the first component dielectric is coupled with the second component dielectric, and the first component interconnect is coupled with the second component interconnect. Other examples and related methods are also disclosed herein.

公开(公告)号：US20240347487A1

公开(公告)日：2024-10-17

申请号：US18368640

申请日：2023-09-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaeean Lee ,  Dahee Kim ,  Taehoon Lee ,  Gyujin Choi

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L24/05 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49833 ,  H01L24/06 ,  H01L24/08 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/03462 ,  H01L2224/05548 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0601 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48225 ,  H01L2224/73265 ,  H01L2924/1815

摘要： An upper redistribution wiring layer of a semiconductor package includes a protective layer provided on at least one upper insulating layer and having an opening that exposes at least a portion of an uppermost redistribution wiring among second redistribution wirings, and a bonding pad provided on the uppermost redistribution wiring through the opening. The bonding pad includes a first plating pattern formed on the uppermost redistribution wiring, the first plating pattern including a via pattern provided in the opening and a pad pattern formed on the via pattern to be exposed from the opening, a second plating pattern on the second plating pattern, and a third plating pattern on the second plating pattern.

公开(公告)号：US12113039B2

公开(公告)日：2024-10-08

申请号：US17245397

申请日：2021-04-30

申请人： ALPHA ASSEMBLY SOLUTIONS INC.

发明人： Shamik Ghoshal ,  Nirmalya Kumar Chaki ,  Poulami Sengupta Roy ,  Siuli Sarkar ,  Anubhav Rustogi

IPC分类号： H01L23/00 ,  B22F1/052 ,  B22F1/102 ,  B22F1/107 ,  B22F1/17 ,  B22F7/04 ,  B23K1/00 ,  B23K35/02 ,  B23K35/30 ,  B23K35/36 ,  B23K35/365 ,  B23K101/40 ,  B23K103/00 ,  H01B1/22 ,  H01L25/00 ,  H05K3/32 ,  H10K50/842

CPC分类号： H01L24/29 ,  B22F1/052 ,  B22F1/102 ,  B22F1/107 ,  B22F1/17 ,  B22F7/04 ,  B23K1/0016 ,  B23K35/025 ,  B23K35/3006 ,  B23K35/3601 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/365 ,  H01B1/22 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  B22F2007/047 ,  B22F2301/255 ,  B22F2302/45 ,  B23K2101/40 ,  B23K2103/56 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/11003 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/131 ,  H01L2224/13339 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13387 ,  H01L2224/1339 ,  H01L2224/13439 ,  H01L2224/1349 ,  H01L2224/13499 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27332 ,  H01L2224/27436 ,  H01L2224/27505 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/32146 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/81075 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8184 ,  H01L2224/81948 ,  H01L2224/83075 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8321 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/83948 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/206 ,  H01L2924/2064 ,  H05K3/321 ,  H10K50/8426 ,  H01L2224/83203 ,  H01L2924/00012 ,  H01L2224/94 ,  H01L2224/83 ,  H01L2224/29339 ,  H01L2924/0105 ,  H01L2224/29339 ,  H01L2924/01046 ,  H01L2224/29339 ,  H01L2924/01047 ,  H01L2224/29339 ,  H01L2924/01029 ,  H01L2224/29339 ,  H01L2924/01028 ,  H01L2224/29439 ,  H01L2924/00014 ,  H01L2224/29355 ,  H01L2924/00014 ,  H01L2224/29347 ,  H01L2924/01028 ,  H01L2224/29347 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2224/29387 ,  H01L2924/0493 ,  H01L2924/01004 ,  H01L2224/2949 ,  H01L2924/00012 ,  H01L2224/2939 ,  H01L2924/0665 ,  H01L2224/271 ,  H01L2924/00014 ,  H01L2224/27436 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/27 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/83439 ,  H01L2924/00014 ,  H01L2224/83447 ,  H01L2924/01074 ,  H01L2224/8321 ,  H01L2924/00014 ,  H01L2224/81203 ,  H01L2924/00012 ,  H01L2224/94 ,  H01L2224/81 ,  H01L2224/13339 ,  H01L2924/0105 ,  H01L2224/13339 ,  H01L2924/01046 ,  H01L2224/13339 ,  H01L2924/01047 ,  H01L2224/13339 ,  H01L2924/01029 ,  H01L2224/13339 ,  H01L2924/01028 ,  H01L2224/13439 ,  H01L2924/00014 ,  H01L2224/13355 ,  H01L2924/00014 ,  H01L2224/13347 ,  H01L2924/01028 ,  H01L2224/13347 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2224/13387 ,  H01L2924/0493 ,  H01L2924/01004 ,  H01L2224/1349 ,  H01L2924/00012 ,  H01L2224/1339 ,  H01L2924/0665 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2224/11436 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/8121 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/1132 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/92247 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/92247 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00

摘要： A sintering powder comprising:



a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.

公开(公告)号：US12094801B2

公开(公告)日：2024-09-17

申请号：US16917542

申请日：2020-06-30

申请人： NXP USA, Inc.

发明人： Lakshminarayan Viswanathan ,  Jaynal A Molla

IPC分类号： H01L23/48 ,  H01L23/367 ,  H01L23/373 ,  H01L23/00

CPC分类号： H01L23/3736 ,  H01L23/367 ,  H01L23/3735 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83439 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L2224/29144 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/29139 ,  H01L2924/00014 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/8385 ,  H01L2924/00014

摘要： A semiconductor device and a method of manufacturing the same include a die and a planar thermal layer, and a thick-silver layer disposed directly onto a first planar side of the planar thermal layer, as well as a metallurgical die-attach disposed between the thick-silver layer and the die, the metallurgical die-attach directly contacting the thick-silver layer.

公开(公告)号：US20240304648A1

公开(公告)日：2024-09-12

申请号：US18546631

申请日：2022-01-25

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： NAOKI YAMASHITA

IPC分类号： H01L27/146 ,  H01L23/00

CPC分类号： H01L27/14636 ,  H01L24/03 ,  H01L24/05 ,  H01L24/94 ,  H01L27/14687 ,  H01L27/14634 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05561 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/94

摘要： A device size is further reduced. A solid-state imaging device includes: a substrate including an imaging element configured to generate an electric signal obtained by photoelectrically converting light incident on a first surface; and a conductor disposed on at least one of a second surface opposite to the first surface of the substrate or a side surface continuous with the second surface of the substrate and electrically connected to the imaging element.

公开(公告)号：US12074127B2

公开(公告)日：2024-08-27

申请号：US18059148

申请日：2022-11-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chung-Shi Liu ,  Chen-Hua Yu

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/482 ,  H01L23/485 ,  H01L23/498 ,  H01L23/52 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L23/48 ,  H01L23/481 ,  H01L23/482 ,  H01L23/4824 ,  H01L23/485 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/52 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L24/10 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/26 ,  H01L24/28 ,  H01L24/29 ,  H01L23/53228 ,  H01L2224/0225 ,  H01L2224/0226 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13018 ,  H01L2224/13026 ,  H01L2224/13082 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/19041 ,  H01L2924/35121 ,  H01L2224/13 ,  H01L2924/00 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05171 ,  H01L2924/00014 ,  H01L2224/05184 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2224/05147 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2224/05171 ,  H01L2924/01029 ,  H01L2924/013

摘要： A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

公开(公告)号：US12062631B2

公开(公告)日：2024-08-13

申请号：US17025181

申请日：2020-09-18

申请人： Intel Corporation

发明人： Adel A Elsherbini ,  Krishna Bharath ,  Kevin P. O'Brien ,  Kimin Jun ,  Han Wui Then ,  Mohammad Enamul Kabir ,  Gerald S. Pasdast ,  Feras Eid ,  Aleksandar Aleksov ,  Johanna M. Swan ,  Shawna M. Liff

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L49/02

CPC分类号： H01L24/08 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0801 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/09055 ,  H01L2224/09505 ,  H01L2224/29186 ,  H01L2224/32145

摘要： Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.

公开(公告)号：US20240234373A9

公开(公告)日：2024-07-11

申请号：US18364127

申请日：2023-08-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： AENEE JANG ,  SEUNGDUK BAEK

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H10B80/00

CPC分类号： H01L25/0657 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/50 ,  H10B80/00 ,  H01L24/80 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06051 ,  H01L2224/06132 ,  H01L2224/06505 ,  H01L2224/08145 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/80357 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2224/9212 ,  H01L2224/9222 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2924/0554 ,  H01L2924/0665 ,  H01L2924/1436

摘要： A semiconductor package includes a package substrate including a first pad; a first memory device arranged on the package substrate and including first and second semiconductor chips stacked in a vertical direction; and a first chip connecting member electrically connecting the first semiconductor chip to the package substrate. The first semiconductor chip includes a first cell structure; a first peripheral circuit structure; a first bonding pad; and a first input/output pad electrically connected to the first pad of the package substrate through the first chip connection member. The second semiconductor chip includes a second cell structure; and a second bonding pad connected to the first bonding pad. A part of the first peripheral circuit structure protrudes from a sidewall of the second semiconductor chip so as not to overlap the second semiconductor chip.

公开(公告)号：US20240203913A1

公开(公告)日：2024-06-20

申请号：US18532793

申请日：2023-12-07

申请人： PAC TECH - PACKAGING TECHNOLOGIES GMBH

发明人： Matthias Fettke

IPC分类号： H01L23/00

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03312 ,  H01L2224/03318 ,  H01L2224/03505 ,  H01L2224/05124 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647

摘要： A chip comprising a non-conductive substrate layer and at least one conductor path disposed on the substrate layer, the solder contact surface being at least partially formed on the conductor path, and a method for producing the solder contact surface on the chip including the steps of: applying a sinter paste to a contact location at least partially located on the conductor path, the sinter paste comprising particles of at least one soft-solderable and conductive material and at least one solvent; and evaporating the solvent.

公开(公告)号：US20240194623A1

公开(公告)日：2024-06-13

申请号：US18554923

申请日：2022-03-08

申请人： TDK ELECTRONICS AG

发明人： Mehrdad Shayganpoor ,  Guenter Aflenzer ,  Davor Tomassevic ,  Thomas Feichtinger

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L21/784 ,  H01L23/31

CPC分类号： H01L24/05 ,  H01L21/561 ,  H01L23/3171 ,  H01L24/02 ,  H01L24/03 ,  H01L24/06 ,  H01L24/95 ,  H01L21/784 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/03002 ,  H01L2224/03422 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/0529 ,  H01L2224/05339 ,  H01L2224/05347 ,  H01L2224/05548 ,  H01L2224/05583 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/95001 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1203

摘要： A semiconductor die and a method for manufacturing a semiconductor die are disclosed. In an embodiment a semiconductor die includes a base body having a semiconductor material and a surface with two contact areas having contact pads at which the semiconductor die is electrically contactable and two metal caps arranged directly at the contact pads.