-
公开(公告)号：US4472259A
公开(公告)日：1984-09-18
申请号：US316433
申请日：1981-10-29
CPC分类号： H01J37/3405
摘要： A cathode assembly for use in a magnetron sputtering system, the system having a cathode assembly with parallel elongated target segments which are formed substantially of a material which is desired to be sputter-deposited onto a substrate. The elongated target segments are each provided with a material removal surface which is inclined toward the other segment with respect to the plane of the substrate. Such inclination permits the material which is removed from the target bars to be focused onto a relatively narrow area, thereby improving the efficiency of the sputtering operation and reducing machine down-time for cleaning and vacuum pumping. In other embodiments, end target segments are provided for improving the efficiency of film deposition near the ends of the elongated bars. The end target segments are provided with material removal surfaces which are also inclined, and connect with the elongated target segments to form a rectangular frame arrangement.
摘要翻译： 一种用于磁控溅射系统的阴极组件，该系统具有阴极组件，该阴极组件具有基本上由期望溅射沉积到衬底上的材料形成的平行细长靶区段。 细长的目标区段各自设置有相对于基板的平面朝向另一个段倾斜的材料去除表面。 这种倾斜允许将从目标棒移除的材料聚焦到相对较窄的区域上，从而提高溅射操作的效率并减少清洗和真空泵送的机器停机时间。 在其他实施例中，提供端部目标段用于提高细长杆端部附近的膜沉积的效率。 末端目标区段设置有也倾斜的材料去除表面，并且与细长目标区段连接以形成矩形框架布置。
-
公开(公告)号：US5174875A
公开(公告)日：1992-12-29
申请号：US814320
申请日：1991-12-23
CPC分类号： C23C14/345 , C23C14/35 , H01J37/3405
摘要： A plasma confining magnetic field is generated over the sputtering region of a sputtering target with a critical field line which determines the shape of the plasma. The critical field line is progressively flattened over the course of the life of the target as the target erodes. Preferably, the magnet is configured with poles spaced around the portion of the target below the sputtering region to provide a magnetic field that flattens as its strength decreases. A regulated power supply maintains a regulated power level that is increased as the target erodes to maintain a constant deposition rate. The voltage delivered by the power supply is maintained at or above a constant level by progressively decreasing the current to an electromagnet to progressively reduce the field strength and flatten the field. As a result of the invention, the erosion groove of the target is broadened and the number of wafers coated by the target during its life is increased.
摘要翻译： 在溅射靶的溅射区域上产生等离子体限制磁场，其中临界场线确定等离子体的形状。 当目标侵蚀时，临界场线在目标的生命过程中逐渐变平。 优选地，磁体配置有在溅射区域下方的靶的部分周围的磁极，以提供当其强度降低时变平的磁场。 稳定的电源保持稳定的功率电平，随着目标腐蚀而保持恒定的沉积速率增加。 电源输出的电压通过逐渐减小到电磁铁的电流而保持在恒定水平以上，以逐渐降低场强并使场平坦化。 作为本发明的结果，目标的侵蚀槽变宽，并且在其寿命期间由靶涂覆的晶片的数量增加。
-
公开(公告)号：US4994162A
公开(公告)日：1991-02-19
申请号：US415083
申请日：1989-09-29
IPC分类号： C23C14/04 , C23C14/54 , H01L21/768
CPC分类号： C23C14/541 , C23C14/046 , H01L21/7684 , H01L21/76877
摘要： A three step planarization method for planarizing aluminum or aluminum alloy in via and trench features of a wafer includes first, high rate deposition in the absence of heat, followed by low rate deposition in the presence of heat, and finally, high rate deposition with continued supply of heat to the wafer. Bias may be used. Deposition is preferably continuous and uninterrupted from the beginning of the first step until the end of the third step. The first step is limited in duration in order to produce a relatively thin layer which geometrically covers the inside surfaces of the feature. The duration of the second step is selectable, but is preferably based upon the temperature of the heat applied to the wafer and a characteristic size of the feature. The third step deposition completes the thickness of the film.
摘要翻译： 用于平坦化铝或铝合金的通孔和沟槽特征的三阶平面化方法包括在不存在热的情况下的第一高速沉积，然后在存在热的情况下低速沉积，最后，高速沉积 向晶片供应热量。 可以使用偏差。 从第一步骤开始到第三步骤结束，沉积优选是连续的和不间断的。 第一步是限制持续时间以产生几何地覆盖特征的内表面的相对薄的层。 第二步的持续时间是可选择的，但优选地基于施加到晶片的热的温度和特征的特征尺寸。 第三步沉积完成膜的厚度。
-
-
搜索结果
3 条记录 (耗时 0.011 秒)
