公开(公告)号：US20160351663A1

公开(公告)日：2016-12-01

申请号：US15051056

申请日：2016-02-23

申请人： BYUNGJAE PARK ,  MYEONGCHEOL KIM ,  HAGJU CHO

发明人： BYUNGJAE PARK ,  MYEONGCHEOL KIM ,  HAGJU CHO

IPC分类号： H01L29/08 ,  H01L29/78 ,  H01L27/088

CPC分类号： H01L29/0847 ,  H01L27/0886 ,  H01L29/41791 ,  H01L29/6681 ,  H01L29/7854 ,  H01L29/7856

摘要： A semiconductor device includes a multi-fin active region having a plurality of sub-fins sequentially arranged on a substrate. A gate electrode crosses the multi-fin active region. Source/drain regions are disposed on the sub-fins except a first sub-fin and a last sub-fin. A contact plug is disposed on the source/drain regions.

摘要翻译： 半导体器件包括具有顺序地布置在衬底上的多个子散热片的多鳍片有源区域。 栅极电极穿过多鳍片有源区域。 源极/漏极区域设置在除了第一子鳍片和最后一个子鳍片之外的子鳍片上。 接触插头设置在源极/漏极区域上。

公开(公告)号：US09728643B2

公开(公告)日：2017-08-08

申请号：US14974018

申请日：2015-12-18

申请人： Byungjae Park ,  Heonjong Shin ,  Hagju Cho ,  Kyounghwan Yeo

发明人： Byungjae Park ,  Heonjong Shin ,  Hagju Cho ,  Kyounghwan Yeo

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66545

摘要： A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.

公开(公告)号：US20160293749A1

公开(公告)日：2016-10-06

申请号：US14974018

申请日：2015-12-18

申请人： Byungjae PARK ,  Heonjong SHIN ,  Hagju CHO ,  Kyounghwan YEO

发明人： Byungjae PARK ,  Heonjong SHIN ,  Hagju CHO ,  Kyounghwan YEO

IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/06

CPC分类号： H01L29/785 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66545

摘要： A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.

摘要翻译： 一种半导体器件，包括从衬底突出的翅片有源区和限定鳍有源区的隔离区，与鳍有源区和隔离区相交的栅极图案，以及形成在栅极图案的侧表面上并延伸到 提供了隔离区域的表面。