公开(公告)号：US07884914B2

公开(公告)日：2011-02-08

申请号：US11268843

申请日：2005-11-08

Applicant: Kun-Hong Chen ,  Chang-Cheng Lo ,  Tzu-Wei Ho

Inventor： Kun-Hong Chen ,  Chang-Cheng Lo ,  Tzu-Wei Ho

IPC: G02F1/1339

CPC classification number: H01L51/525 ,  H01L51/5246 ,  Y10S277/904 ,  Y10T156/1082 ,  Y10T428/1086 ,  Y10T428/1095 ,  Y10T428/24331 ,  Y10T428/24339

Abstract: A structure for encapsulating a liquid crystal display device is disclosed. Openings are formed in a second material layer on a first substrate, exposing an underlying first material layer. The openings are substantially distributed over the perimeter of the first substrate. A sealant is placed in the openings, forming a sealant region for attachment of a second substrate to the first substrate. The sealant region is substantially perpendicular to a direction of length of the openings. In addition, the sealant contacts the first material layer and the second material layer through the openings.

Abstract translation: 公开了一种用于封装液晶显示装置的结构。 开口形成在第一衬底上的第二材料层中，暴露下面的第一材料层。 开口基本上分布在第一基底的周边上。 密封剂被放置在开口中，形成用于将第二基底附接到第一基底的密封剂区域。 密封剂区域基本上垂直于开口的长度方向。 此外，密封剂通过开口接触第一材料层和第二材料层。

公开(公告)号：US07612837B2

公开(公告)日：2009-11-03

申请号：US11599267

申请日：2006-11-15

Applicant: Chang-Cheng Lo ,  Hong-Jye Hong

Inventor： Chang-Cheng Lo ,  Hong-Jye Hong

IPC: G02F1/1333

CPC classification number: G02F1/136204

Abstract: A protecting structure for ESD is formed on a substrate of a TFT-LCD. A display area of the TFT-LCD is formed by a pixel array comprising lots of pixel units, scan lines and data lines. The protecting structure comprises a first rake metal and an α-Si layer. The first rake metal is formed outside the display area and each short end of the first rake metal faces the data line by a spacing. Further, all tips of the short end and the data lines are sharp in shape so as to accumulate electrostatic charges. The α-Si layer is formed directly under the predetermined short end of first rake metal and the corresponding data line. The α-Si layer is used to serve as a discharging path for performing through breakdown to the α-Si layer so as to eliminate electrostatic charges.

Abstract translation: 在TFT-LCD的基板上形成用于ESD的保护结构。 TFT-LCD的显示区域由包括许多像素单元，扫描线和数据线的像素阵列形成。 保护结构包括第一耙式金属和α-Si层。 第一耙子金属形成在显示区域的外部，并且第一耙式金属的每个短端面向数据线一个间隔。 此外，短端和数据线的所有尖端的形状都是尖锐的，以便累积静电电荷。 α-Si层直接形成在第一耙金属的预定短端和相应的数据线之下。 α-Si层用作用于通过击穿到α-Si层的放电路径，以消除静电电荷。

公开(公告)号：US07158194B2

公开(公告)日：2007-01-02

申请号：US10900104

申请日：2004-07-28

Applicant: Chang-Cheng Lo ,  Hong-Jye Hong

Inventor： Chang-Cheng Lo ,  Hong-Jye Hong

IPC: G02F1/1333

CPC classification number: G02F1/136204

Abstract: A protecting structure for ESD is formed on a substrate of a TFT-LCD. A display area of the TFT-LCD is formed by a pixel array comprising lots of pixel units, scan lines and data lines. The protecting structure comprises a first rake metal and an α-Si layer. The first rake metal is formed outside the display area and each short end of the first rake metal faces the data line by a spacing. Further, all tips of the short end and the data lines are sharp in shape so as to accumulate electrostatic charges. The α-Si layer is formed directly under the predetermined short end of first rake metal and the corresponding data line. The α-Si layer is used to serve as a discharging path for performing through breakdown to the α-Si layer so as to eliminate electrostatic charges.

公开(公告)号：US20050178498A1

公开(公告)日：2005-08-18

申请号：US10782259

申请日：2004-02-18

Applicant: Kun-Hong Chen ,  Chang-Cheng Lo ,  Tzu-Wei Ho

Inventor： Kun-Hong Chen ,  Chang-Cheng Lo ,  Tzu-Wei Ho

IPC: G02F1/1339 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1341 ,  G09F9/00 ,  H01L23/28 ,  H01L51/52 ,  B32B31/00

CPC classification number: H01L51/525 ,  H01L51/5246 ,  Y10S277/904 ,  Y10T156/1082 ,  Y10T428/1086 ,  Y10T428/1095 ,  Y10T428/24331 ,  Y10T428/24339

Abstract: A method is disclosed for encapsulating at least one display device. A plurality of parallel openings are formed in a first material layer on a first substrate to expose a second material layer underneath. A predetermined sealant is placed thereon to form a sealant region perpendicular to the openings for attaching a second substrate, wherein the sealant contacts the first material layer and the second material layer through the openings for encapsulating the display device between the first and second substrates.

Abstract translation: 公开了一种用于封装至少一个显示装置的方法。 在第一基板上的第一材料层中形成多个平行的开口，以露出下面的第二材料层。 将预定的密封剂放置在其上以形成垂直于用于附接第二基板的开口的密封剂区域，其中密封剂通过开口接触第一材料层和第二材料层，以将显示装置封装在第一和第二基板之间。

公开(公告)号：US20070058098A1

公开(公告)日：2007-03-15

申请号：US11599267

申请日：2006-11-15

Applicant: Chang-Cheng Lo ,  Hong-Jye Hong

Inventor： Chang-Cheng Lo ,  Hong-Jye Hong

IPC: G02F1/1333

CPC classification number: G02F1/136204

Abstract: A protecting structure for ESD is formed on a substrate of a TFT-LCD. A display area of the TFT-LCD is formed by a pixel array comprising lots of pixel units, scan lines and data lines. The protecting structure comprises a first rake metal and an α-Si layer. The first rake metal is formed outside the display area and each short end of the first rake metal faces the data line by a spacing. Further, all tips of the short end and the data lines are sharp in shape so as to accumulate electrostatic charges. The α-Si layer is formed directly under the predetermined short end of first rake metal and the corresponding data line. The α-Si layer is used to serve as a discharging path for performing through breakdown to the α-Si layer so as to eliminate electrostatic charges.

Abstract translation: 在TFT-LCD的基板上形成用于ESD的保护结构。 TFT-LCD的显示区域由包括许多像素单元，扫描线和数据线的像素阵列形成。 保护结构包括第一耙式金属和α-Si层。 第一耙子金属形成在显示区域的外部，并且第一耙式金属的每个短端面向数据线一个间隔。 此外，短端和数据线的所有尖端的形状都是尖锐的，以便累积静电电荷。 α-Si层直接形成在第一耙金属的预定短端和相应的数据线之下。 α-Si层用作用于通过击穿到α-Si层的放电路径，以消除静电电荷。

公开(公告)号：US20060119753A1

公开(公告)日：2006-06-08

申请号：US11004389

申请日：2004-12-03

Applicant: Fang-Chen Luo ,  Chang-Cheng Lo

Inventor： Fang-Chen Luo ,  Chang-Cheng Lo

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  H01L27/12

Abstract: A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.

Abstract translation: 一种用于TFT-LCD的每个像素的堆叠存储电容器结构，其中第一存储电容器由第一金属层，栅极绝缘体层和第二金属层形成。 第二电容器由第二金属层，钝化绝缘体层和ITO层形成。 第一金属层和ITO层通过在通过栅极绝缘体和钝化绝缘体层的整个制造工艺中的一个绝缘体蚀刻步骤中被蚀刻的通孔而接合在一起。 这样，两个电容器以堆叠的方式并联连接。 利用堆叠的存储电容器结构，电荷存储容量增加而不显着影响像素的开口率。 ITO和像素电极可以是沉积在钝化绝缘体层上的铟氧化物层的不同部分。

公开(公告)号：US20060057334A1

公开(公告)日：2006-03-16

申请号：US11268843

申请日：2005-11-08

Applicant: Kun-Hong Chen ,  Chang-Cheng Lo ,  Tzu-Wei Ho

Inventor： Kun-Hong Chen ,  Chang-Cheng Lo ,  Tzu-Wei Ho

IPC: B32B3/10

CPC classification number: H01L51/525 ,  H01L51/5246 ,  Y10S277/904 ,  Y10T156/1082 ,  Y10T428/1086 ,  Y10T428/1095 ,  Y10T428/24331 ,  Y10T428/24339

Abstract: A structure for encapsulating a liquid crystal display device is disclosed. Openings are formed in a second material layer on a first substrate, exposing an underlying first material layer. The openings are substantially distributed over the perimeter of the first substrate. A sealant is placed in the openings, forming a sealant region for attachment of a second substrate to the first substrate. The sealant region is substantially perpendicular to a direction of length of the openings. In addition, the sealant contacts the first material layer and the second material layer through the openings.

Abstract translation: 公开了一种用于封装液晶显示装置的结构。 开口形成在第一衬底上的第二材料层中，暴露下面的第一材料层。 开口基本上分布在第一基底的周边上。 密封剂被放置在开口中，形成用于将第二基底附接到第一基底的密封剂区域。 密封剂区域基本上垂直于开口的长度方向。 此外，密封剂通过开口接触第一材料层和第二材料层。

公开(公告)号：US20050078232A1

公开(公告)日：2005-04-14

申请号：US10900104

申请日：2004-07-28

Applicant: Chang-Cheng Lo ,  Hong-Jye Hong

Inventor： Chang-Cheng Lo ,  Hong-Jye Hong

IPC: G02F1/1362 ,  G02F1/1333

CPC classification number: G02F1/136204

Abstract: A protecting structure for ESD is formed on a substrate of a TFT-LCD. A display area of the TFT-LCD is formed by a pixel array comprising lots of pixel units, scan lines and data lines. The protecting structure comprises a first rake metal and an α-Si layer. The first rake metal is formed outside the display area and each short end of the first rake metal faces the data line by a spacing. Further, all tips of the short end and the data lines are sharp in shape so as to accumulate electrostatic charges. The α-Si layer is formed directly under the predetermined short end of first rake metal and the corresponding data line. The α-Si layer is used to serve as a discharging path for performing through breakdown to the α-Si layer so as to eliminate electrostatic charges.

Abstract translation: 在TFT-LCD的基板上形成用于ESD的保护结构。 TFT-LCD的显示区域由包括许多像素单元，扫描线和数据线的像素阵列形成。 保护结构包括第一耙式金属和α-Si层。 第一耙子金属形成在显示区域的外部，并且第一耙式金属的每个短端面向数据线一个间隔。 此外，短端和数据线的所有尖端的形状都是尖锐的，以便累积静电电荷。 α-Si层直接形成在第一耙金属的预定短端和相应的数据线之下。 α-Si层用作用于通过击穿到α-Si层的放电路径，以消除静电电荷。

公开(公告)号：US08184219B2

公开(公告)日：2012-05-22

申请号：US12150132

申请日：2008-04-24

Applicant: Fang-Chen Luo ,  Chang-Cheng Lo

Inventor： Fang-Chen Luo ,  Chang-Cheng Lo

IPC: G02F1/1343 ,  G02F1/1333

CPC classification number: G02F1/136213 ,  H01L27/12

Abstract: A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.

Abstract translation: 一种用于TFT-LCD的每个像素的堆叠存储电容器结构，其中第一存储电容器由第一金属层，栅极绝缘体层和第二金属层形成。 第二电容器由第二金属层，钝化绝缘体层和ITO层形成。 第一金属层和ITO层通过在通过栅极绝缘体和钝化绝缘体层的整个制造工艺中的一个绝缘体蚀刻步骤中被蚀刻的通孔而接合在一起。 这样，两个电容器以堆叠的方式并联连接。 利用堆叠的存储电容器结构，电荷存储容量增加而不显着影响像素的开口率。 ITO和像素电极可以是沉积在钝化绝缘体层上的铟氧化物层的不同部分。

公开(公告)号：US07675582B2

公开(公告)日：2010-03-09

申请号：US11004389

申请日：2004-12-03

Applicant: Fang-Chen Luo ,  Chang-Cheng Lo

Inventor： Fang-Chen Luo ,  Chang-Cheng Lo

IPC: G02F1/1343 ,  G02F1/13

CPC classification number: G02F1/136213 ,  H01L27/12

Abstract: A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.

Abstract translation: 一种用于TFT-LCD的每个像素的堆叠存储电容器结构，其中第一存储电容器由第一金属层，栅极绝缘体层和第二金属层形成。 第二电容器由第二金属层，钝化绝缘体层和ITO层形成。 第一金属层和ITO层通过在通过栅极绝缘体和钝化绝缘体层的整个制造工艺中的一个绝缘体蚀刻步骤中被蚀刻的通孔而接合在一起。 这样，两个电容器以堆叠的方式并联连接。 利用堆叠的存储电容器结构，电荷存储容量增加而不显着影响像素的开口率。 ITO和像素电极可以是沉积在钝化绝缘体层上的铟氧化物层的不同部分。