公开(公告)号：US20240304619A1

公开(公告)日：2024-09-12

申请号：US18181155

申请日：2023-03-09

Applicant: Guowei Xu ,  Chiao-Ti Huang ,  Robin Chao ,  Tao Chu ,  Feng Zhang ,  Yang Zhang ,  Biswajeet Guha ,  Oleg Golonzka

Inventor： Guowei Xu ,  Chiao-Ti Huang ,  Robin Chao ,  Tao Chu ,  Feng Zhang ,  Yang Zhang ,  Biswajeet Guha ,  Oleg Golonzka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/778 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/778 ,  H01L29/7851

Abstract: An IC device includes a backside FTI separating a first transistor from a second transistor. The FTI may be between a source region of the first transistor and a drain region of the second transistor. The source region of the first transistor and the drain region of the second transistor may be different portions of a semiconductor structure, e.g., a fin or nanoribbon. The IC device may also include a frontside metal layer. The semiconductor structure may have a first surface and a second surface opposing the first surface. The first surface of the semiconductor structure may be closer to the metal layer and larger than the second surface of the semiconductor structure. The FTI may have a first surface and a second surface opposing the first surface. The first surface of the FTI may be closer to the metal layer but smaller than the second surface of the FTI.