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45 条记录 (耗时 0.019 秒)

    Image processing method for boundary resolution enhancement
    1.
    发明授权
    Image processing method for boundary resolution enhancement 有权
    边界分辨率增强的图像处理方法

    公开(公告)号：US08335394B2

    公开(公告)日：2012-12-18

    申请号：US12748058

    申请日：2010-03-26

    申请人： Lihua Zhu ,  Haihua Wu ,  Chung-Tao Chu ,  Richard Hua

    发明人： Lihua Zhu ,  Haihua Wu ,  Chung-Tao Chu ,  Richard Hua

    IPC分类号： G06K9/40

    CPC分类号： G06T5/003

    摘要： An image processing method for boundary resolution enhancement is disclosed. Firstly, an image is transferred into an image layer. Noise of the image layer is removed by a bilateral filter and crisp edges are retained at the same time. Moreover, the image layer is interpolated by an interpolation filter for resolution enhancement. The image processing method of the present invention can lower the image blur degree substantially, enhance the image resolution and be widely implemented in all sorts of image/video processing hardware devices.

    摘要翻译： 公开了一种用于边界分辨率增强的图像处理方法。 首先，图像被转移到图像层中。 图像层的噪声被双边滤波器去除，同时保留了清晰的边缘。 此外，通过用于分辨率增强的内插滤波器来内插图像层。 本发明的图像处理方法可以显着降低图像模糊度，提高图像分辨率，并且可以广泛地实现各种图像/视频处理硬件设备。

    CHARGE APPARATUS
    2.
    发明申请
    CHARGE APPARATUS 有权
    充电装置

    公开(公告)号：US20110140540A1

    公开(公告)日：2011-06-16

    申请号：US12833218

    申请日：2010-07-09

    申请人： Mu-Tao Chu ,  Yu-Chen Yu ,  Wen-Yung Yeh ,  Wen-Yih Liao ,  Jui-Ying Lin ,  Ming-Hsien Wu

    发明人： Mu-Tao Chu ,  Yu-Chen Yu ,  Wen-Yung Yeh ,  Wen-Yih Liao ,  Jui-Ying Lin ,  Ming-Hsien Wu

    IPC分类号： H02J17/00

    CPC分类号： H02J50/00 ,  H02J7/025 ,  H02J7/34 ,  H02J7/35 ,  H02J17/00 ,  H02J50/40 ,  H02J50/80 ,  H02J50/90 ,  Y02E10/766

    摘要： A charge apparatus including a natural energy conversion module, an energy converter, an energy transmitter, and an energy receiver is provided. The natural energy conversion module receives a natural energy and converts the natural energy into a first electric energy. The energy converter is electrically connected to the natural energy conversion module and converts the first electric energy into a wireless energy. The energy transmitter is electrically connected to the energy converter and transmits the wireless energy in a wireless manner. The energy receiver receives the wireless energy in a wireless manner and converts the wireless energy into a second electric energy.

    摘要翻译： 提供了包括自然能量转换模块，能量转换器，能量发射器和能量接收器的充电装置。 天然能量转换模块接收天然能量并将天然能量转换为第一电能。 能量转换器电连接到自然能量转换模块，并将第一电能转换为无线能量。 能量发射器电连接到能量转换器并且以无线方式传输无线能量。 能量接收器以无线方式接收无线能量，并将无线能量转换为第二电能。

    Photoresist removal from alignment marks through wafer edge exposure
    6.
    发明授权
    Photoresist removal from alignment marks through wafer edge exposure 失效
    通过晶片边缘曝光从对准标记去除光致抗蚀剂

    公开(公告)号：US06743735B2

    公开(公告)日：2004-06-01

    申请号：US10102288

    申请日：2002-03-19

    申请人： Po-Tao Chu ,  Hsin-Yuan Chen ,  Chung-Jen Chen ,  Tai-Ming Yang ,  Cheng-Ming Wu

    发明人： Po-Tao Chu ,  Hsin-Yuan Chen ,  Chung-Jen Chen ,  Tai-Ming Yang ,  Cheng-Ming Wu

    IPC分类号： H01L21302

    CPC分类号： G03F7/2026 ,  G03F7/2028 ,  H01L23/544 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/906 ,  H01L2924/00

    摘要： Removing photoresist from alignment marks on a semiconductor wafer using a wafer edge exposure process is disclosed. The alignment marks on the wafer are covered by photoresist used in conjunction with semiconductor processing of one or more layers deposited on the semiconductor wafer. One or more parts of the edge of the wafer are exposed to remove the photoresist from these parts and thus reveal alignment marks on the wafer. The exposure of the one or more parts of the wafer is accomplished without performing a photolithographic clear out process. Rather, a wafer edge exposure (WEE) process is inventively utilized. Once the WEE process is performed, subsequent layers may be deposited by aligning them using the revealed alignment marks.

    摘要翻译： 公开了使用晶片边缘曝光工艺从半导体晶片上的对准标记去除光致抗蚀剂。 晶片上的对准标记由与沉积在半导体晶片上的一个或多个层的半导体处理结合使用的光致抗蚀剂覆盖。 暴露晶片边缘的一个或多个部分以从这些部分去除光致抗蚀剂，从而在晶片上露出对准标记。 晶片的一个或多个部分的曝光是在不执行光刻清除工艺的情况下实现的。 相反，本发明利用晶片边缘曝光（WEE）工艺。 一旦执行了WEE过程，可以使用所显示的对准标记对准它们来沉积后续层。

    Partial reflective laser output device
    7.
    发明授权
    Partial reflective laser output device 有权
    部分反射激光输出装置

    公开(公告)号：US06483864B1

    公开(公告)日：2002-11-19

    申请号：US09556901

    申请日：2000-04-20

    申请人： Rong-Heng Yuang ,  Chia-Ming Tsai ,  Ding-Wei Huang ,  Mu-Tao Chu

    发明人： Rong-Heng Yuang ,  Chia-Ming Tsai ,  Ding-Wei Huang ,  Mu-Tao Chu

    IPC分类号： H01S500

    CPC分类号： H01S5/02284 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/0683

    摘要： A partial reflective laser output device comprising a partial reflective unit mounted on a laser output device (such as a vertical cavity emitting laser), the partial reflective unit allowing the laser beam emitted from the laser output device to be partially reflected while the rest penetrating through. On one hand, this device decreases the intensity of output laser light so as to comply with the eye safety standard; the reflected light is absorbed by a photodiode (PD) to perform auto power control on the laser output device on the other. In addition, by adjusting the tilting angle of the partial reflective unit or making a curvature thereon, the reflected light can have no destructive interference with the output light and can even be focused onto the PD so that there would be no relative intensity noise problem and the size of the PD can be made smaller to lower the cost.

    摘要翻译： 部分反射激光输出装置，其包括安装在激光输出装置（例如垂直腔发射激光器）上的部分反射单元，允许从激光输出装置发射的激光束被部分地反射的部分反射单元，而其余部分穿透 。 一方面，该装置降低输出激光的强度，以符合眼睛安全标准; 反射光被光电二极管（PD）吸收，从而对激光输出装置进行自动功率控制。 此外，通过调整部分反射单元的倾斜角度或在其上形成曲率，反射光可以不与输出光产生相互干涉，甚至可以聚焦到PD上，从而不存在相对强度的噪声问题， 可以使PD的尺寸更小以降低成本。

    Volcano defect-free tungsten plug
    8.
    发明授权
    Volcano defect-free tungsten plug 失效
    火山无缺陷钨塞

    公开(公告)号：US5672543A

    公开(公告)日：1997-09-30

    申请号：US639677

    申请日：1996-04-29

    申请人： Chaur Rong Chang ,  Po-Tao Chu ,  Tzu-Min Peng ,  Kuang-Hui Chang

    发明人： Chaur Rong Chang ,  Po-Tao Chu ,  Tzu-Min Peng ,  Kuang-Hui Chang

    IPC分类号： H01L21/768 ,  H01L21/28

    CPC分类号： H01L21/76843 ,  H01L21/76877 ,  Y10S438/937

    摘要： A new method of metallization using a tungsten plug is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer covers the semiconductor device structures wherein a contact opening is made through the insulating layer to the semiconductor substrate. A barrier layer is deposited conformally over the surface of the insulating layer and within the contact opening. A stress buffer layer is deposited overlying the barrier layer wherein the stress buffer layer prevents volcano defects. A tungsten plug is formed within the contact opening to complete the formation of the tungsten plug metallization without volcano defects in the fabrication of an integrated circuit device.

    摘要翻译： 描述了使用钨丝塞的新的金属化方法。 半导体器件结构设置在半导体衬底中和半导体衬底上。 绝缘层覆盖其中通过绝缘层到半导体衬底的接触开口的半导体器件结构。 保护层在绝缘层的表面和接触开口内共形沉积。 沉积在阻挡层上的应力缓冲层，其中应力缓冲层防止火山缺陷。 在接触开口中形成钨插塞，以在集成电路器件的制造中完成钨插塞金属化的形成而没有火山缺陷。

    Particle monitoring method for plasma reactors with moving gas distribution housings
    9.
    发明授权
    Particle monitoring method for plasma reactors with moving gas distribution housings 失效
    具有移动气体分配壳体的等离子体反应器的粒子监测方法

    公开(公告)号：US5604134A

    公开(公告)日：1997-02-18

    申请号：US597493

    申请日：1996-02-02

    申请人： Kuan-Hui Chang ,  Tzu-Min Peng ,  Po-Tao Chu ,  Shin-Kuei Yen

    发明人： Kuan-Hui Chang ,  Tzu-Min Peng ,  Po-Tao Chu ,  Shin-Kuei Yen

    IPC分类号： H01L21/66 ,  G01R31/26

    CPC分类号： H01L22/12

    摘要： Plasma reactors are used extensively in the manufacture of integrated circuits for the deposition and etching of thin films at low temperatures. Their range of operating temperatures and gas pressures make them highly susceptible to build-up of deposits on the inner surfaces of the reaction chamber which subsequently become dislodged by vibrations, stresses, and other aggravations and are dispersed within the system as particulates. The monitoring of particulate accumulation on wafers is conventionally done by subjecting a test wafer to a simulated operation within the tool under gas flow alone. Some types of plasma reactors incorporate oscillating gas dispersion housings in order to improve homogeneity of the gas mixture. The motion of these housings can induce significant particle displacement within the chamber. The correct monitoring procedure for these tools must therefore include the motion of the distribution housing in addition to the conventional procedures.

    摘要翻译： 等离子体反应器广泛用于制造用于低温沉积和蚀刻薄膜的集成电路。 它们的工作温度和气体压力范围使得它们非常容易在反应室的内表面上积累，随后由于振动，应力和其它恶化而被移除，并作为颗粒分散在系统内。 通常，通过在单独的气体流下使试验晶片在工具内进行模拟操作来进行对晶片上的颗粒积聚的监测。 一些类型的等离子体反应器包括振荡气体分散壳体，以改善气体混合物的均匀性。 这些壳体的运动可以在室内引起显着的颗粒位移。 因此，这些工具的正确监控程序除了常规程序外，还必须包括配电箱的运动。

    In situ hot bake treatment that prevents precipitate formation after a contact layer etch back step
    10.
    发明授权
    In situ hot bake treatment that prevents precipitate formation after a contact layer etch back step 失效
    在接触层回蚀步骤之后防止沉淀物形成的原位热烘烤处理

    公开(公告)号：US5554563A

    公开(公告)日：1996-09-10

    申请号：US416163

    申请日：1995-04-04

    申请人： Po-Tao Chu ,  Kuang-Hui Chang ,  Yuan-Chang Huang

    发明人： Po-Tao Chu ,  Kuang-Hui Chang ,  Yuan-Chang Huang

    IPC分类号： H01L21/321 ,  H01L21/768 ,  H01L21/28

    CPC分类号： H01L21/321 ,  H01L21/76838

    摘要： A process for preventing the formation of precipitates on a substrate surface containing titanium after a contact layer (e.g., tungsten layer) etch back. The process involves removing the precursor chemicals of the precipitate. With the invention, the precursor are removed by baking the substrate at a temperature of approximately 120.degree. C. for approximately 80 seconds. Preferably, the baking process is performed in situ by a halogen lamp mounted on the exit loading dock of the etcher thereby not impacting the wafer throughput of the etcher.

    摘要翻译： 在接触层（例如钨层）回蚀后，在含有钛的基板表面上防止析出物形成的方法。 该方法包括去除沉淀物的前体化学物质。 利用本发明，通过在大约120℃的温度下烘烤基底来除去前体约80秒。 优选地，通过安装在蚀刻器的出口加载基座上的卤素灯在原位进行烘焙处理，从而不影响蚀刻器的晶片生产量。