Process for producing storage-stable surfaces of polished silicon wafers
    1.
    发明授权
    Process for producing storage-stable surfaces of polished silicon wafers 失效
    抛光硅晶片的储存稳定表面的制造方法

    公开(公告)号:US5219613A

    公开(公告)日:1993-06-15

    申请号:US863394

    申请日:1992-04-03

    IPC分类号: H01L21/312 H01L21/316

    摘要: Silicon wafers are first subjected to an oxidative treatment and subsequey to exposure to organosilicon compounds which contain at least one radical in the molecule which is hydrolyzably bound to the silicon and at least one radical in the molecule having hydrophilic properties. Depending on the compound selected, more or less strongly hydrophilic or hydrophobic properties of the silicon surface can consequently be established under mild conditions. The wafers treated in such a manner have a high storage stability and retain their surface nature even under difficult climatic circumstances. The surface nature present after the oxidative treatment can then be restored particularly easily by hydrolysis.

    摘要翻译: 首先对硅晶片进行氧化处理,然后暴露于在分子中含有至少一个基团的有机硅化合物,其可水解地结合到硅和至少一个具有亲水性质的基团中。 取决于所选择的化合物,因此可以在温和的条件下建立硅表面的或多或少的强亲水性或疏水性。 以这种方式处理的晶片具有高的储存稳定性并且即使在困难的气候条件下也保持其表面性质。 然后在氧化处理后存在的表面性质可以通过水解特别容易地恢复。