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1.发明授权Thin film transistor matrix device including first and second connection lines 失效薄膜晶体管矩阵器件包括第一和第二连接线公开(公告)号：US08592816B2
公开(公告)日：2013-11-26
申请号：US13552882
申请日：2012-07-19
IPC分类号： H01L29/04
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A thin film transistor matrix device including an insulating substrate with a plurality of lines arranged on the substrate, where the lines include first lines and second lines. The device also includes a first connection line extending in a direction transverse to the plurality of lines, where the first connection line and the first lines are configured and arranged to be electrically connected to each other, as well as a second connection line extending in a direction transverse to the plurality of lines, where the second connection line and the second lines are also configured and arranged to be electrically connected to each other. The first and second connection lines are both formed on the same side of an image display region, when considered in plan view. Finally, the plurality of lines are associated, respectively, with drain bus lines and/or gate bus lines.
摘要翻译： 一种薄膜晶体管矩阵器件，包括具有布置在衬底上的多条线的绝缘衬底，其中线包括第一线和第二线。 该装置还包括沿横向于多条线的方向延伸的第一连接线，其中第一连接线和第一线被配置和布置为彼此电连接，以及第二连接线， 横向于多个线的方向，其中第二连接线和第二线也被配置和布置成彼此电连接。 当在平面图中考虑时，第一和第二连接线都形成在图像显示区域的相同侧上。 最后，多条线路分别与漏极总线线路和/或栅极总线线路相关联。
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2.发明授权Thin film transistor matrix device including first and second conducting connections formed outside an image display region 有权薄膜晶体管矩阵器件包括形成在图像显示区域外的第一和第二导电连接公开(公告)号：US07947983B2
公开(公告)日：2011-05-24
申请号：US12688407
申请日：2010-01-15
IPC分类号： H01L29/04
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors (TFTs) on the insulating substrate, and a plurality of picture element electrodes on the insulating substrate in a matrix to define an image display region. A first conducting film is on the insulating substrate. A first insulating film is on the first conducting film. A second conducting film is on the first insulating film, and a second insulating film is over the first insulating film and the second conducting film. A first conducting connection is formed, outside the image display region, to pass through the first and second insulating films, and to electrically connect the first conducting film to a third conducting film. A second conducting connection is formed, outside the image display region, to pass through the second insulating film and to electrically connect the second conducting film to the third conducting film.
摘要翻译： 一种薄膜晶体管矩阵器件，包括绝缘衬底，绝缘衬底上的多个薄膜晶体管（TFT）和矩阵中的绝缘衬底上的多个像素电极，以限定图像显示区域。 第一导电膜位于绝缘基板上。 第一绝缘膜位于第一导电膜上。 第二导电膜位于第一绝缘膜上，第二绝缘膜位于第一绝缘膜和第二导电膜之上。 在图像显示区域外形成第一导电连接，以穿过第一和第二绝缘膜，并将第一导电膜电连接到第三导电膜。 在图像显示区域外部形成第二导电连接，以通过第二绝缘膜并将第二导电膜电连接到第三导电膜。
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3.发明授权Thin film transistor matrix device including a plurality of thin film transistors arranged on the substrate 有权薄膜晶体管矩阵器件包括布置在衬底上的多个薄膜晶体管公开(公告)号：US07947982B2
公开(公告)日：2011-05-24
申请号：US12489292
申请日：2009-06-22
IPC分类号： H01L29/04
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors (TFTs) on the insulating substrate, and a plurality of picture element electrodes (connected to the TFTs) on the insulating substrate in a matrix to define an image display region. A first conductor is on the insulating substrate. A first insulating film is on the first conductor, a second conductor is on the first insulating film, and a second insulating film is over the first insulating film and the second conductor. A first contact hole is formed in the first and second insulating films, a second contact hole is formed in the second insulating film, and a conducting connection is formed between the first and second contact holes. The first and second conductors are connected to the conducting connection via the first and second contact holes, respectively, which are both outside the image display region.
摘要翻译： 一种薄膜晶体管矩阵器件，包括绝缘衬底，绝缘衬底上的多个薄膜晶体管（TFT）和矩阵中的绝缘衬底上的多个像素电极（连接到TFT），以限定图像显示 地区。 第一导体位于绝缘基板上。 第一绝缘膜位于第一导体上，第二导体位于第一绝缘膜上，第二绝缘膜位于第一绝缘膜和第二导体之上。 在第一和第二绝缘膜中形成第一接触孔，在第二绝缘膜中形成第二接触孔，并且在第一和第二接触孔之间形成导电连接。 第一和第二导体分别经由位于图像显示区域外部的第一和第二接触孔连接到导电连接。
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公开(公告)号：US5742074A
公开(公告)日：1998-04-21
申请号：US669272
申请日：1996-05-29
IPC分类号： G02F1/136 , G02F1/1345 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L31/032
CPC分类号： G02F1/1345 , G02F1/136204 , H01L27/124 , H01L27/1244 , G02F1/13454 , G02F2001/136254
摘要： A TFT matrix-type liquid crystal display device is used in laptop personal coputers and wall TV's. On a transparent insulating substrate there are formed gate bus lines for commonly connecting the gates of thin film transistors, drain bus lines for commonly connecting the drains of the thin film transistors, and outside terminals and outside terminals opposed respectively to the ends of the gate bus lines and the drain bus lines, opposed respectively to the ends of the gate bus lines and the drain bus lines. Gate connection lines for commonly connecting the gate bus lines and drain connection lines for commonly connecting the drain bus lines are formed on the transparent insulating substrate in regions inner of the outside terminals. The thin film transistor matrix device can be fabricated without occurrence of short circuit defects, with little characteristic change and with high yields.
摘要翻译： TFT矩阵型液晶显示装置用于膝上型个人计算机和壁挂式电视机。 在透明绝缘基板上形成用于共同连接薄膜晶体管的栅极的栅极总线，用于共同连接薄膜晶体管的漏极的漏极总线以及分别与栅极总线相对的外部端子和外部端子 线路和漏极总线，分别与栅极总线和漏极总线的端部相对。 用于共同连接用于共同连接漏极总线的栅极总线和漏极连接线的栅极连接线在外部端子的内部的区域中形成在透明绝缘基板上。 可以制造薄膜晶体管矩阵器件而不发生短路缺陷，具有很小的特性变化和高产率。
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公开(公告)号：US20100117087A1
公开(公告)日：2010-05-13
申请号：US12688407
申请日：2010-01-15
IPC分类号： H01L33/00
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix, arranging a plurality of picture element electrodes on the substrate in a matrix and connecting the picture element electrodes to sources of the thin film transistors. The method also includes forming a plurality of bus lines for commonly connecting gates or drains of the thin film transistors, forming a plurality of bus line terminals on the ends of the bus lines, respectively, with each bus line terminal being provided for each bus line, and forming one connection line on the substrate in a region outer of plurality of the bus line terminals and commonly connecting the plurality of bus lines. The method further includes the step of electrically disconnecting the bus lines from the connection line by laser melting.
摘要翻译： 一种制造薄膜晶体管矩阵器件的方法，包括形成透明绝缘衬底，在矩阵中在衬底上布置多个薄膜晶体管，将矩阵中的多个像素电极布置在衬底上，并将像素 电极到薄膜晶体管的源极。 该方法还包括形成用于共同连接薄膜晶体管的栅极或漏极的多条总线，在总线端部分别形成多条总线端子，每条总线线路端子被提供给每条总线 并且在多个总线端子外部的区域中的基板上形成一条连接线，并且共同连接多条总线。 该方法还包括通过激光熔化将总线与连接线电断开的步骤。
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公开(公告)号：US20060163579A1
公开(公告)日：2006-07-27
申请号：US11377754
申请日：2006-03-16
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A TFT matrix-type liquid crystal display device is used in laptop personal computers and wall TVs. On a transparent insulating substrate 10 there are formed gate bus lines 14 for commonly connecting the gates of thin film transistors, drain bus lines 16 for commonly connecting the drains of the thin film transistors, and outside terminals 20 and outside terminals 30 opposed respectively to the ends of the gate bus lines and the drain bus lines 16. Gate connection lines 24 for commonly connecting the gate bus lines 14 and drain connection lines 34 for commonly connecting the drain bus lines are formed in regions inner of the outside terminals 20, 30. The thin film transistor matrix device can be fabricated without occurrence of short circuit defects, with little characteristic change and with high yields.
摘要翻译： TFT矩阵型液晶显示装置用于膝上型个人计算机和壁挂式电视机。 在透明绝缘基板10上形成有用于共同连接薄膜晶体管的栅极的栅极总线14，用于共同连接薄膜晶体管的漏极的漏极总线16以及分别对应于薄膜晶体管的漏极的外部端子20和外部端子30。 栅极总线和漏极总线16的端部。 用于共同连接栅极总线14和用于共同连接漏极总线的漏极连接线34的栅极连接线24形成在外部端子20,30内部的区域中。薄膜晶体管矩阵器件可以制造而不发生短路 电路缺陷，几乎没有特性变化和高产率。
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公开(公告)号：US06767754B2
公开(公告)日：2004-07-27
申请号：US10080108
申请日：2002-02-21
IPC分类号： H01L2100
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A TFT matrix-type liquid crystal display device is used in laptop personal computers and wall televisions. On a transparent insulating substrate there are formed gate bus lines for commonly connecting the gates of thin film transistors, drain bus lines for commonly connecting the drains of the thin film transistors, and outside terminals opposed respectively to the ends of the gate bus lines and the drain bus lines. Gate connection lines for commonly connecting the gate bus lines, and drain connection lines for commonly connecting the drain bus lines, are formed on the transparent insulating substrate in regions inner of the outside terminals. The thin film transistor matrix device can be fabricate without occurrence of short circuit defects, with little characteristic change, and with high yields.
摘要翻译： TFT矩阵型液晶显示装置用于膝上型个人计算机和墙壁电视机。 在透明绝缘基板上形成用于共同连接薄膜晶体管的栅极的栅极总线，用于共同连接薄膜晶体管的漏极的漏极总线和分别与栅极总线的端部相对的外部端子和 排水公交线路。 用于共同连接栅极总线的栅极连接线和用于共同连接漏极总线的漏极连接线在外部端子的内部的区域中形成在透明绝缘基板上。 薄膜晶体管矩阵器件可以制造而不发生短路缺陷，几乎没有特性变化，并且产量高。
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公开(公告)号：US20090256153A1
公开(公告)日：2009-10-15
申请号：US12489292
申请日：2009-06-22
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix, arranging a plurality of picture element electrodes on the substrate in a matrix and connecting the picture element electrodes to sources of the thin film transistors. The method also includes forming a plurality of bus lines for commonly connecting gates or drains of the thin film transistors, forming a plurality of bus line terminals on the ends of the bus lines, respectively, with each bus line terminal being provided for each bus line, and forming one connection line on the substrate in a region outer of plurality of the bus line terminals and commonly connecting the plurality of bus lines. The method further includes the step of electrically disconnecting the bus lines from the connection line by laser melting.
摘要翻译： 一种制造薄膜晶体管矩阵器件的方法，包括形成透明绝缘衬底，在矩阵中在衬底上布置多个薄膜晶体管，将矩阵中的多个像素电极布置在衬底上，并将像素 电极到薄膜晶体管的源极。 该方法还包括形成用于共同连接薄膜晶体管的栅极或漏极的多条总线，在总线端部分别形成多条总线端子，每条总线线路端口被提供给每条总线 并且在多个总线端子外部的区域中的基板上形成一条连接线，并且共同连接多条总线。 该方法还包括通过激光熔化将总线与连接线电断开的步骤。
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公开(公告)号：US07575960B2
公开(公告)日：2009-08-18
申请号：US11377754
申请日：2006-03-16
IPC分类号： H01L21/00
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix, arranging a plurality of picture element electrodes on the substrate in a matrix and connecting the picture element electrodes to sources of the thin film transistors. The method also includes forming a plurality of bus lines for commonly connecting gates or drains of the thin film transistors, forming a plurality of bus line terminals on the ends of the bus lines, respectively, with each bus line terminal being provided for each bus line, and forming one connection line on the substrate in a region outer of plurality of the bus line terminals and commonly connecting the plurality of bus lines. The method further includes the step of electrically disconnecting the bus lines from the connection line by laser melting.
摘要翻译： 一种制造薄膜晶体管矩阵器件的方法，包括形成透明绝缘衬底，在矩阵中在衬底上布置多个薄膜晶体管，将矩阵中的多个像素电极布置在衬底上，并将像素 电极到薄膜晶体管的源极。 该方法还包括形成用于共同连接薄膜晶体管的栅极或漏极的多条总线，在总线端部分别形成多条总线端子，每条总线线路端口被提供给每条总线 并且在多个总线端子外部的区域中的基板上形成一条连接线，并且共同连接多条总线。 该方法还包括通过激光熔化将总线与连接线电断开的步骤。
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公开(公告)号：US07075108B2
公开(公告)日：2006-07-11
申请号：US10660053
申请日：2003-09-11
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G02F1/1345 , G02F1/13454 , G02F1/136204 , G02F2001/136254 , H01L27/124 , H01L27/1244
摘要： A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors arranged on the insulating substrate, and a plurality of picture element electrodes arranged on the insulating substrate in a matrix and connected to the thin film transistors. The device also includes a plurality of bus lines made of a first conducting film, a first insulating film formed on the first conducting film, a second conducting film formed on the first insulating film, and a second insulating film formed on the first insulating film and the second conducting film. Additionally, first and second contact holes are formed outside an image display region in which the plurality of picture elements are formed. The first conducting film is connected to the third conducing film via the first contact hole, and the second conducting film is connected to the third conducting film via the second contact hole.
摘要翻译： 一种薄膜晶体管矩阵器件，包括绝缘衬底，布置在绝缘衬底上的多个薄膜晶体管，以及以矩阵形式布置在绝缘衬底上并连接到薄膜晶体管的多个像素电极。 该装置还包括由第一导电膜，形成在第一导电膜上的第一绝缘膜，形成在第一绝缘膜上的第二导电膜和形成在第一绝缘膜上的第二绝缘膜， 第二导电膜。 此外，第一和第二接触孔形成在其中形成有多个像素的图像显示区域的外部。 第一导电膜经由第一接触孔与第三导电膜连接，第二导电膜经由第二接触孔与第三导电膜连接。
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