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    THIN FILM TRANSISTOR MATRIX DEVICE AND METHOD FOR FABRICATING THE SAME
    1.
    发明申请
    THIN FILM TRANSISTOR MATRIX DEVICE AND METHOD FOR FABRICATING THE SAME 失效
    薄膜晶体管矩阵器件及其制造方法

    公开(公告)号：US20130015451A1

    公开(公告)日：2013-01-17

    申请号：US13552882

    申请日：2012-07-19

    申请人： Hidaki Takizawa ,  Shougo Hayashi ,  Takeshi Kinjo ,  Makoto Tachibanaki ,  Kenji Okamoto

    发明人： Hidaki Takizawa ,  Shougo Hayashi ,  Takeshi Kinjo ,  Makoto Tachibanaki ,  Kenji Okamoto

    IPC分类号： H01L29/04

    CPC分类号： G02F1/1345 ,  G02F1/13454 ,  G02F1/136204 ,  G02F2001/136254 ,  H01L27/124 ,  H01L27/1244

    摘要： A thin film transistor matrix device including an insulating substrate; a plurality of lines arranged on the substrate, with the lines being defined as odd-number-th lines alternating with even-number-th lines; a first connection line extending in a direction transverse to the plurality of lines, where the first connection line and the odd-number-th lines are configured and arranged to be electrically connected/disconnected to/from each other; and a second connection line extending in a direction transverse to the plurality of lines, where the second connection line and the ven-number-th lines are configured and arranged to be electrically connected/disconnected to/from each other.

    摘要翻译： 一种薄膜晶体管阵列器件，包括绝缘衬底; 布置在基板上的多条线，其中线被定义为与第二行交替的奇数行; 所述第一连接线在横向于所述多个线的方向上延伸，其中所述第一连接线和所述奇数行被配置和布置成彼此电连接/断开; 以及第二连接线，其在与所述多条线横向的方向上延伸，其中所述第二连接线和所述第三线被配置和布置成彼此电连接/断开。

    Thin film transistor matrix device including first and second connection lines
    2.
    发明授权
    Thin film transistor matrix device including first and second connection lines 有权
    薄膜晶体管矩阵器件包括第一和第二连接线

    公开(公告)号：US08258513B2

    公开(公告)日：2012-09-04

    申请号：US12770155

    申请日：2010-04-29

    申请人： Hidaki Takizawa ,  Shougo Hayashi ,  Takeshi Kinjo ,  Makoto Tachibanaki ,  Kenji Okamoto

    发明人： Hidaki Takizawa ,  Shougo Hayashi ,  Takeshi Kinjo ,  Makoto Tachibanaki ,  Kenji Okamoto

    IPC分类号： H01L29/04

    CPC分类号： G02F1/1345 ,  G02F1/13454 ,  G02F1/136204 ,  G02F2001/136254 ,  H01L27/124 ,  H01L27/1244

    摘要： A thin film transistor matrix device including an insulating substrate and a plurality of lines arranged on the substrate. The lines are defined as odd-number-th lines alternating with even-number-th lines. A first connection line extends in a direction transverse to the plurality of lines. The first connection line and the odd-number-th lines are configured and arranged to be electrically connected to each other. A second connection line extends in a direction transverse to the plurality of lines. The second connection line and the even-number-th lines are configured and arranged to be electrically connected to each other. The first connection line and the second connection line are both formed on the same side of an image display region, when considered in plan view.

    摘要翻译： 一种薄膜晶体管矩阵器件，包括绝缘衬底和布置在衬底上的多条线。 行被定义为与第二行交替的奇数行。 第一连接线在横向于多条线的方向上延伸。 第一连接线和奇数行被配置和布置成彼此电连接。 第二连接线在横向于多根线的方向上延伸。 第二连接线和偶数线被配置和布置成彼此电连接。 当在平面图中考虑时，第一连接线和第二连接线都形成在图像显示区域的同一侧上。

    THIN FILM TRANSISTOR MATRIX DEVICE AND METHOD FOR FABRICATING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR MATRIX DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    薄膜晶体管矩阵器件及其制造方法

    公开(公告)号：US20090256153A1

    公开(公告)日：2009-10-15

    申请号：US12489292

    申请日：2009-06-22

    申请人： Hidaki Takizawa ,  Shougo Hayashi ,  Takeshi Kinjo ,  Makoto Tachibanaki ,  Kenji Okamoto

    发明人： Hidaki Takizawa ,  Shougo Hayashi ,  Takeshi Kinjo ,  Makoto Tachibanaki ,  Kenji Okamoto

    IPC分类号： H01L29/04 ,  H01L33/00 ,  H01L21/82

    CPC分类号： G02F1/1345 ,  G02F1/13454 ,  G02F1/136204 ,  G02F2001/136254 ,  H01L27/124 ,  H01L27/1244

    摘要： A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix, arranging a plurality of picture element electrodes on the substrate in a matrix and connecting the picture element electrodes to sources of the thin film transistors. The method also includes forming a plurality of bus lines for commonly connecting gates or drains of the thin film transistors, forming a plurality of bus line terminals on the ends of the bus lines, respectively, with each bus line terminal being provided for each bus line, and forming one connection line on the substrate in a region outer of plurality of the bus line terminals and commonly connecting the plurality of bus lines. The method further includes the step of electrically disconnecting the bus lines from the connection line by laser melting.

    摘要翻译： 一种制造薄膜晶体管矩阵器件的方法，包括形成透明绝缘衬底，在矩阵中在衬底上布置多个薄膜晶体管，将矩阵中的多个像素电极布置在衬底上，并将像素 电极到薄膜晶体管的源极。 该方法还包括形成用于共同连接薄膜晶体管的栅极或漏极的多条总线，在总线端部分别形成多条总线端子，每条总线线路端口被提供给每条总线 并且在多个总线端子外部的区域中的基板上形成一条连接线，并且共同连接多条总线。 该方法还包括通过激光熔化将总线与连接线电断开的步骤。

    Method for fabricating a thin film transistor matrix device
    10.
    发明授权
    Method for fabricating a thin film transistor matrix device 失效
    制造薄膜晶体管矩阵器件的方法

    公开(公告)号：US07575960B2

    公开(公告)日：2009-08-18

    申请号：US11377754

    申请日：2006-03-16

    申请人： Hidaki Takizawa ,  Shougo Hayashi ,  Takeshi Kinjo ,  Makoto Tachibanaki ,  Kenji Okamoto

    发明人： Hidaki Takizawa ,  Shougo Hayashi ,  Takeshi Kinjo ,  Makoto Tachibanaki ,  Kenji Okamoto

    IPC分类号： H01L21/00

    CPC分类号： G02F1/1345 ,  G02F1/13454 ,  G02F1/136204 ,  G02F2001/136254 ,  H01L27/124 ,  H01L27/1244

    摘要： A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix, arranging a plurality of picture element electrodes on the substrate in a matrix and connecting the picture element electrodes to sources of the thin film transistors. The method also includes forming a plurality of bus lines for commonly connecting gates or drains of the thin film transistors, forming a plurality of bus line terminals on the ends of the bus lines, respectively, with each bus line terminal being provided for each bus line, and forming one connection line on the substrate in a region outer of plurality of the bus line terminals and commonly connecting the plurality of bus lines. The method further includes the step of electrically disconnecting the bus lines from the connection line by laser melting.

    摘要翻译： 一种制造薄膜晶体管矩阵器件的方法，包括形成透明绝缘衬底，在矩阵中在衬底上布置多个薄膜晶体管，将矩阵中的多个像素电极布置在衬底上，并将像素 电极到薄膜晶体管的源极。 该方法还包括形成用于共同连接薄膜晶体管的栅极或漏极的多条总线，在总线端部分别形成多条总线端子，每条总线线路端口被提供给每条总线 并且在多个总线端子外部的区域中的基板上形成一条连接线，并且共同连接多条总线。 该方法还包括通过激光熔化将总线与连接线电断开的步骤。