公开(公告)号：US06291354B1

公开(公告)日：2001-09-18

申请号：US09315799

申请日：1999-05-21

Applicant: Hsi-Mao Hsiao ,  Chun-Lung Chen ,  H. C. Yu ,  Hsi-Chin Lin

Inventor： Hsi-Mao Hsiao ,  Chun-Lung Chen ,  H. C. Yu ,  Hsi-Chin Lin

IPC: H01L21302

CPC classification number: H01L29/66507 ,  H01L21/31116 ,  H01L29/665 ,  H01L29/6656

Abstract: A method of fabricating a semiconductor device is described in which an insulation layer is formed over the gate electrode and the substrate. This insulation layer is anisotropically etched away except for a portion surrounding the sidewall of the gate electrode to form a spacer. The tip of the spacer is at the same height as the upper surface of the liner layer and is lower than the upper surface of the gate electrode, therefore, resulting in an increase of the exposed area of the gate electrode surface.

Abstract translation: 描述了制造半导体器件的方法，其中在栅电极和衬底上形成绝缘层。 除了围绕栅电极的侧壁的部分以形成间隔物之外，该绝缘层被各向异性地蚀刻掉。 间隔件的顶端与衬垫层的上表面的高度相同，并且低于栅电极的上表面，因此导致栅电极表面的暴露面积的增加。

公开(公告)号：US06245626B1

公开(公告)日：2001-06-12

申请号：US09348395

申请日：1999-07-07

Applicant: Chun-Lung Chen ,  Hsi-Mao Hsiao ,  Hsi-Chin Lin ,  Wen-Hua Cheng

Inventor： Chun-Lung Chen ,  Hsi-Mao Hsiao ,  Hsi-Chin Lin ,  Wen-Hua Cheng

IPC: H01L21336

CPC classification number: H01L29/6653 ,  H01L21/28052 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method of fabricating a MOS transistor. A substrate has a gate formed thereon and a LDD is formed in the substrate beside the gate. A spacer is formed on the sidewall of the gate. A sacrificial layer is formed over the substrate to cover the gate and the spacer. A portion of the sacrificial layer is removed to expose a portion of the spacer. The exposed spacer is removed, such that a portion of the gate sidewall is exposed. The sacrificial layer is removed. A source/drain region is then formed in the substrate beside the spacer.

Abstract translation: 一种制造MOS晶体管的方法。 衬底具有形成在其上的栅极，并且在栅极旁边的衬底中形成LDD。 在门的侧壁上形成间隔物。 牺牲层形成在衬底上以覆盖栅极和间隔物。 去除牺牲层的一部分以露出间隔物的一部分。 去除暴露的间隔物，使得露出侧壁的一部分。 牺牲层被去除。 然后在衬垫旁边的衬底上形成源/漏区。

公开(公告)号：US06200886B1

公开(公告)日：2001-03-13

申请号：US09428353

申请日：1999-10-28

Applicant: Hong-Chen Yu ,  Hsi-Mao Hsiao ,  Hsi-Chin Lin ,  Chun-Lung Chen

Inventor： Hong-Chen Yu ,  Hsi-Mao Hsiao ,  Hsi-Chin Lin ,  Chun-Lung Chen

IPC: H01L214763

CPC classification number: H01L21/28247 ,  H01L29/66545

Abstract: A fabrication process for a polysilicon gate is described in which a silicon dioxide layer of various thicknesses is formed on the substrate and on the polysilicon gate with an overlying anti-reflection layer. The silicon dioxide layer is removed with enough silicon dioxide layer remaining to cover the sidewalls of the polysilicon gate and the silicon substrate before the removal of the anti-reflection layer. The sidewalls of the polysilicon gate and the silicon substrate are thus simultaneously protected during the removal of the anti-reflection layer.

Abstract translation: 描述了一种用于多晶硅栅极的制造工艺，其中在衬底上和多晶硅栅极上形成了具有上覆抗反射层的各种厚度的二氧化硅层。 在除去抗反射层之前，剩下足够的二氧化硅层以覆盖多晶硅栅极和硅衬底的侧壁，去除二氧化硅层。 因此，在去除抗反射层期间同时保护多晶硅栅极和硅衬底的侧壁。

公开(公告)号：US06194279B1

公开(公告)日：2001-02-27

申请号：US09340929

申请日：1999-06-28

Applicant: Chun-Lung Chen ,  Hsi-Chin Lin ,  Hsi-Mao Hsiao ,  Wen-Hua Cheng

Inventor： Chun-Lung Chen ,  Hsi-Chin Lin ,  Hsi-Mao Hsiao ,  Wen-Hua Cheng

IPC: H01L21336

CPC classification number: H01L29/6659 ,  H01L21/28247 ,  H01L29/665

Abstract: A fabrication method for a gate spacer. The method comprises provision of a substrate with a gate formed thereon, after which a SiNx spacer is formed on the gate sidewall. The substrate is then covered with a SiOx layer. A part of the SiOx layer is removed until the surface of the SiOx layer is lower than the top surface of the gate. A portion of the SiNx layer is removed to expose the top edge of the gate spacer and to increase the exposed area of the gate. The SiOx layer is consequently removed.

Abstract translation: 栅极间隔物的制造方法。 该方法包括提供其上形成有栅极的衬底，之后在栅极侧壁上形成SiNx间隔物。 然后用SiOx层覆盖衬底。 除去SiOx层的一部分直到SiOx层的表面低于栅极的顶表面。 去除SiNx层的一部分以露出栅极间隔物的顶部边缘并增加栅极的暴露面积。 因此，SiO x层被去除。