Composition and method for planarizing surfaces
    1.
    发明授权
    Composition and method for planarizing surfaces 有权
    平面化表面的组成和方法

    公开(公告)号:US07955519B2

    公开(公告)日:2011-06-07

    申请号:US11241137

    申请日:2005-09-30

    CPC classification number: H01L21/3212 C09G1/02

    Abstract: The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 80% of the α-alumina particles have a diameter of about 500 nm or less, an organic acid, a corrosion inhibitor, and water. Another composition comprises α-alumina particles, an organic acid, dual corrosion inhibitors of triazole and benzotriazole, wherein the wt. % ratio of the triazole to benzotriazole is about 0.1 to about 4.8, and water.

    Abstract translation: 本发明提供了用于平坦化或抛光表面的组合物和方法。 一种组合物包含约0.01重量% %至约20wt。 %的α-氧化铝颗粒,其中α-氧化铝颗粒的平均直径为200nm以下,80%的α-氧化铝颗粒的直径为约500nm以下,有机酸,缓蚀剂,和 水。 另一组合物包含α-氧化铝颗粒,有机酸,三唑和苯并三唑的双重腐蚀抑制剂,其中wt- 三唑与苯并三唑的%比为约0.1至约4.8,和水。

    Compositions and methods for CMP of low-k-dielectric materials
    3.
    发明授权
    Compositions and methods for CMP of low-k-dielectric materials 有权
    低k电介质材料CMP的组成和方法

    公开(公告)号:US07456107B2

    公开(公告)日:2008-11-25

    申请号:US11595536

    申请日:2006-11-09

    CPC classification number: C09K3/1463 C09G1/02 H01L21/31053

    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.

    Abstract translation: 本发明提供适用于抛光低k电介质材料的化学机械抛光(CMP)组合物。 所述组合物包含颗粒磨料,至少一种含有亲水部分和亲油部分的无硅氧烷非离子表面活性剂,至少一种含有亲水部分和亲油部分的含硅氧烷的非离子表面活性剂及其水性载体。 还公开了利用该组合物来研磨低k电介质表面的CMP方法。

    Composition and method for planarizing surfaces
    4.
    发明申请
    Composition and method for planarizing surfaces 有权
    平面化表面的组成和方法

    公开(公告)号:US20070075040A1

    公开(公告)日:2007-04-05

    申请号:US11241137

    申请日:2005-09-30

    CPC classification number: H01L21/3212 C09G1/02

    Abstract: The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 80% of the α-alumina particles have a diameter of about 500 nm or less, an organic acid, a corrosion inhibitor, and water. Another composition comprises α-alumina particles, an organic acid, dual corrosion inhibitors of triazole and benzotriazole, wherein the wt. % ratio of the triazole to benzotriazole is about 0.1 to about 4.8, and water.

    Abstract translation: 本发明提供了用于平坦化或抛光表面的组合物和方法。 一种组合物包含约0.01重量% %至约20wt。 %的α-氧化铝颗粒,其中α-氧化铝颗粒的平均直径为200nm或更小,并且80%的α-氧化铝颗粒具有约500nm或更小的直径,有机酸,腐蚀抑制剂和 水。 另一种组合物包含α-氧化铝颗粒,有机酸,三唑和苯并三唑的双重腐蚀抑制剂,其中wt- 三唑与苯并三唑的%比为约0.1至约4.8,和水。

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