公开(公告)号：US20120015490A1

公开(公告)日：2012-01-19

申请号：US13183630

申请日：2011-07-15

申请人： Kwan-Heum LEE ,  Soon-Wook JUNG ,  Jung-Hyun PARK ,  Wook-Je KIM ,  Jong-Sang BAN

发明人： Kwan-Heum LEE ,  Soon-Wook JUNG ,  Jung-Hyun PARK ,  Wook-Je KIM ,  Jong-Sang BAN

IPC分类号： H01L21/8238 ,  H01L21/336

CPC分类号： H01L21/823814 ,  H01L21/823864 ,  H01L29/7848

摘要： A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成栅极结构; 形成牺牲隔离物可以形成在栅极衬底的侧壁上; 通过使用栅极结构和牺牲隔离物作为离子注入掩模的第一离子注入工艺将第一杂质注入到衬底的部分中以形成源区和漏区; 去除牺牲隔离物; 以及通过使用所述栅极结构作为离子注入掩模的第二离子注入工艺将第二杂质和碳原子注入到所述衬底的部分中，以分别形成源极和漏极延伸区域和碳掺杂区域。

公开(公告)号：US08431462B2

公开(公告)日：2013-04-30

申请号：US13183630

申请日：2011-07-15

申请人： Kwan-Heum Lee ,  Soon-Wook Jung ,  Jung-Hyun Park ,  Wook-Je Kim ,  Jong-Sang Ban

发明人： Kwan-Heum Lee ,  Soon-Wook Jung ,  Jung-Hyun Park ,  Wook-Je Kim ,  Jong-Sang Ban

IPC分类号： H01L21/337 ,  H01L21/8238 ,  H01L21/336 ,  H01L27/12

CPC分类号： H01L21/823814 ,  H01L21/823864 ,  H01L29/7848

摘要： A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成栅极结构; 形成牺牲隔离物可以形成在栅极衬底的侧壁上; 通过使用栅极结构和牺牲隔离物作为离子注入掩模的第一离子注入工艺将第一杂质注入到衬底的部分中以形成源区和漏区; 去除牺牲隔离物; 以及通过使用所述栅极结构作为离子注入掩模的第二离子注入工艺将第二杂质和碳原子注入到所述衬底的部分中，以分别形成源极和漏极延伸区域和碳掺杂区域。