Manufacturing method of resistor and resistor

    公开(公告)号:US12243667B2

    公开(公告)日:2025-03-04

    申请号:US17759487

    申请日:2020-12-25

    Abstract: A manufacturing method of a resistor contains: a step of forming a resistor base material by stacking an electrode material, a resistive material, and an electrode material in this order and by bonding the electrode material, the resistive material, and the electrode material by applying pressure in the stacked direction; a step of passing the resistor base material through a die, the die being formed with an opening portion having a dimension smaller than an outer dimension of the resistor base material; and a step of obtaining an individual resistor from the resistor base material passed through the die.

    CHIP-TYPE CURRENT FUSE
    4.
    发明公开

    公开(公告)号:US20240282537A1

    公开(公告)日:2024-08-22

    申请号:US18653678

    申请日:2024-05-02

    CPC classification number: H01H37/761

    Abstract: The chip-type current fuse is configured to include a fuse element 5 formed between a first front electrode 3 and a second front electrode 4. The fuse element 5 includes: a first linear portion 5a that has an end connected to the first front electrode 3 and extends in a direction toward the second front electrode 4; a second linear portion 5b that has an end connected to the second front electrode 4 and extends in parallel to the first linear portion 5a in a direction toward the first front electrode 3; and an inclined linear portion 5c that links the first linear portion 5a and the second linear portion 5b to each other. The inclined linear portion 5c is connected at an acute angle to each of the first linear portion 5a and the second linear portion 5b.

    CURRENT DETECTION DEVICE
    5.
    发明公开

    公开(公告)号:US20240248119A1

    公开(公告)日:2024-07-25

    申请号:US18559922

    申请日:2022-04-22

    Inventor: Ryou Osawa

    CPC classification number: G01R1/203 G01R19/0092

    Abstract: The present invention relates to a current detection device, in particular a current detection device using a shunt resistor. The current detection device (30) includes a resistive element (5) and a pair of electrodes (6, 7). The electrodes (6, 7) have detection areas (24a, 25a) demarcated by first slits (16, 17), second slits (26, 27), and contact surfaces (6a, 7a) that at least partially contacts the resistive element (5). The electrodes (6, 7) further have voltage detection portions (20, 21) arranged in the detection areas (24a, 25a).

    CHIP RESISTOR AND METHOD OF PRODUCING THEREOF

    公开(公告)号:US20230335317A1

    公开(公告)日:2023-10-19

    申请号:US18126517

    申请日:2023-03-27

    Inventor: Taro KIMURA

    CPC classification number: H01C1/142

    Abstract: A chip resistor 10 comprises: a insulating substrate 1; a pair of upper surface electrodes 2; a resistor 3; a pair of lower surface electrodes 5; a pair of resin electrode layers 6 made of synthetic resin materials containing conductive particles and laminated on the pair of lower surface electrodes 5; a pair of end face electrodes 7; and a pair of external electrodes 8, wherein the pair of the lower surface electrodes 5 is made of metal thin film layers formed as thin films on a mounting surface of the insulating substrate 1, respectively, and includes exposed portions 5a exposed from the resin electrode layers 6, respectively, and the pair of external electrodes 8 is in contact with the exposed portions 5a of the lower surface electrodes 5 and entire surfaces of the resin electrode layers 6, respectively. [Selected drawing] FIG. 1

Patent Agency Ranking