中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

16 records (took 0.016 seconds)

    Scalable Position-Sensitive Photodetector Device
    4.
    发明申请
    Scalable Position-Sensitive Photodetector Device 有权

    公开(公告)号：US20210066382A1

    公开(公告)日：2021-03-04

    申请号：US16557149

    申请日：2019-08-30

    Applicant: LightSpin Technologies Inc.

    Inventor： Eric Harmon

    IPC: H01L27/146 ,  H01L27/144 ,  H01L31/107

    Abstract: A position-sensitive photodetector device includes a grid of series-connected photodetectors that are electrically coupled to either a vertical photodetector array (VA photodetectors) or to a horizontal photodetector array (HA photodetectors). The VA and HA photodetectors are arranged in an alternating sequence along rows and/or columns throughout the grid. A horizontal-position readout line is electrically coupled to a termination of each vertical photodetector array, and a vertical-position readout line is electrically coupled to a termination of each horizontal photodetector array.

    Virtual Negative Bevel and Methods of Isolating Adjacent Devices
    6.
    发明申请
    Virtual Negative Bevel and Methods of Isolating Adjacent Devices 审中-公开

    公开(公告)号：US20190140128A1

    公开(公告)日：2019-05-09

    申请号：US15808605

    申请日：2017-11-09

    Applicant: LightSpin Technologies Inc.

    Inventor： Eric Harmon

    IPC: H01L31/107 ,  H01L31/02 ,  H01L31/18

    Abstract: This disclosure is directed to devices and systems and methods comprising virtual negative beveled facets including to isolate adjacent devices from one another. Aspects hereof are directed to integrated photon detectors or photodetector devices incorporating implant isolation mesas and resistors, and in particular to methods and structures for isolating such detectors or devices from neighboring detectors or devices.

    Integrated avalanche photodiode arrays
    7.
    发明授权
    Integrated avalanche photodiode arrays 有权

    公开(公告)号：US09768211B2

    公开(公告)日：2017-09-19

    申请号：US14705270

    申请日：2015-05-06

    Applicant: LightSpin Technologies, Inc.

    Inventor： Eric Harmon

    IPC: H01L27/14 ,  H01L27/144 ,  H01L31/00

    CPC classification number: H01L27/1446 ,  H01L31/00 ,  H01L31/107

    Abstract: A photodetector includes an array of pixels, each pixel comprising a defined doped region defined in a doped semiconductor layer. The defined doped region is defined by selected regions of ion implants to provide resistive isolation between each defined doped region. A capacitor is formed by the defined doped region and a metal layer disposed above the doped semiconductor layer. A contact metal line is disposed above the doped semiconductor layer. The capacitor metal and contact metal lines are electrically coupled together and are in electrical communication with the output of the photodetector array.

    Integrated Avalanche Photodiode Arrays
    8.
    发明申请
    Integrated Avalanche Photodiode Arrays 审中-公开
    集成雪崩光电二极管阵列

    公开(公告)号：US20150270430A1

    公开(公告)日：2015-09-24

    申请号：US14718352

    申请日：2015-05-21

    Applicant: LightSpin Technologies, Inc.

    Inventor： Eric S. Harmon

    IPC: H01L31/107 ,  H01L31/18 ,  H01L27/146

    CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

    Abstract translation: 本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。 在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。 其它方面涉及掩蔽和多次植入和/或退火步骤。 此外，公开了制造和使用这些器件，电路和阵列的方法。

    Integrated avalanche photodiode arrays
    9.
    发明授权
    Integrated avalanche photodiode arrays 有权
    集成雪崩光电二极管阵列

    公开(公告)号：US09076707B2

    公开(公告)日：2015-07-07

    申请号：US14257179

    申请日：2014-04-21

    Applicant: LightSpin Technologies, Inc.

    Inventor： Eric S. Harmon

    IPC: H01L27/146 ,  H01L31/107 ,  H01L27/144

    CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

    Abstract translation: 本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。 在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。 其它方面涉及掩蔽和多次植入和/或退火步骤。 此外，公开了制造和使用这些器件，电路和阵列的方法。

    Integrated Avalanche Photodiode Arrays
    10.
    发明申请
    Integrated Avalanche Photodiode Arrays 有权
    集成雪崩光电二极管阵列

    公开(公告)号：US20140312448A1

    公开(公告)日：2014-10-23

    申请号：US14257179

    申请日：2014-04-21

    Applicant: LightSpin Technologies, Inc.

    Inventor： Eric S. Harmon

    IPC: H01L27/146 ,  H01L31/107

    CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

    Abstract translation: 本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。 在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。 其它方面涉及掩蔽和多次植入和/或退火步骤。 此外，公开了制造和使用这些器件，电路和阵列的方法。

Patent Agency Ranking