公开(公告)号：US08627259B2

公开(公告)日：2014-01-07

申请号：US13593158

申请日：2012-08-23

申请人： Peter Huang ,  Ming-Chun Chen

发明人： Peter Huang ,  Ming-Chun Chen

IPC分类号： G06F17/50 ,  H01L21/20 ,  H01L27/108 ,  H01L29/12 ,  H01L29/786 ,  H01L29/94 ,  H01L21/338 ,  H01L21/337 ,  H01L21/8242

CPC分类号： H01G4/33 ,  H01L22/14 ,  H01L22/20 ,  H01L27/0207 ,  H01L27/118 ,  H01L28/86

摘要： According to one exemplary embodiment, a method for adjusting geometry of a capacitor includes fabricating a first composite capacitor residing in a first standard cell with a first set of process parameters. The method further includes using a second standard cell having substantially same dimensions as the first standard cell. The method further includes using a capacitance value from the first composite capacitor to adjust a geometry of a second composite capacitor residing in the second standard cell, wherein the second composite capacitor is fabricated with a second set of process parameters. The geometry of the second composite capacitor can be adjusted to cause the second composite capacitor to have a capacitance value substantially equal to the capacitance value from the first composite capacitor.

摘要翻译： 根据一个示例性实施例，一种用于调整电容器几何形状的方法包括制造驻留在具有第一组工艺参数的第一标准单元中的第一复合电容器。 该方法还包括使用具有与第一标准单元基本相同的尺寸的第二标准单元。 该方法还包括使用来自第一复合电容器的电容值来调整驻留在第二标准单元中的第二复合电容器的几何形状，其中第二复合电容器由第二组工艺参数制成。 可以调整第二复合电容器的几何形状，使得第二复合电容器的电容值基本上等于来自第一复合电容器的电容值。

公开(公告)号：US20100125989A1

公开(公告)日：2010-05-27

申请号：US12315122

申请日：2008-11-26

申请人： Peter Huang ,  Ming-Chun Chen

发明人： Peter Huang ,  Ming-Chun Chen

IPC分类号： H01G7/00

CPC分类号： H01G4/33 ,  H01L22/14 ,  H01L22/20 ,  H01L27/0207 ,  H01L27/118 ,  H01L28/86

摘要： According to one exemplary embodiment, a method for adjusting geometry of a capacitor includes fabricating a first composite capacitor residing in a first standard cell with a first set of process parameters. The method further includes using a second standard cell having substantially same dimensions as the first standard cell. The method further includes using a capacitance value from the first composite capacitor to adjust a geometry of a second composite capacitor residing in the second standard cell, wherein the second composite capacitor is fabricated with a second set of process parameters. The geometry of the second composite capacitor can be adjusted to cause the second composite capacitor to have a capacitance value substantially equal to the capacitance value from the first composite capacitor.

摘要翻译： 根据一个示例性实施例，一种用于调整电容器几何形状的方法包括制造驻留在具有第一组工艺参数的第一标准单元中的第一复合电容器。 该方法还包括使用具有与第一标准单元基本相同的尺寸的第二标准单元。 该方法还包括使用来自第一复合电容器的电容值来调整驻留在第二标准单元中的第二复合电容器的几何形状，其中第二复合电容器由第二组工艺参数制成。 可以调整第二复合电容器的几何形状，使得第二复合电容器的电容值基本上等于来自第一复合电容器的电容值。

公开(公告)号：US6098024A

公开(公告)日：2000-08-01

申请号：US985468

申请日：1997-12-05

申请人： Ming Chun Chen ,  Paul J. Steffan

发明人： Ming Chun Chen ,  Paul J. Steffan

IPC分类号： H01L21/66 ,  G06F19/00

CPC分类号： H01L22/20

摘要： A method of utilizing associated process data parameters in the manufacture of semiconductor wafers by converting tool-based data to lot based data in order to predict wafer electrical test results from measured in-line critical dimensions, lot based data and the converted tool-based data. The converted tool-based data is obtained by interpolating data between a measurement obtained from a tool at a first time and a measurement obtained from the tool at a second time. The data association is obtained using LaPlace-Everett interpolation. The converted tool-based data can also be obtained by extrapolating data from the historical measurements taken from the tool.

摘要翻译： 通过将基于工具的数据转换为批量数据来在半导体晶片的制造中利用相关联的工艺数据参数的方法，以便从测量的在线临界尺寸，基于批次的数据和经转换的基于工具的数据预测晶片电测试结果 。 通过在第一次从工具获得的测量值和从第二时间从工具获得的测量之间内插数据来获得经转换的基于工具的数据。 使用LaPlace-Everett插值获得数据关联。 转换的基于工具的数据也可以通过从从工具获取的历史测量中推断出数据来获得。

公开(公告)号：US5972728A

公开(公告)日：1999-10-26

申请号：US986315

申请日：1997-12-05

申请人： Ming Chun Chen ,  Paul J. Steffan

发明人： Ming Chun Chen ,  Paul J. Steffan

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01J2237/30433 ,  H01J2237/31701

摘要： A method of obtaining accurate actual ion implantation equipment used in ion implantation processes during the manufacture of semiconductor devices. A monitor structure for each ion implant process is implanted with ions during the ion implant process. A control monitor structure is implanted with boron ions. The concentration profiles of all implanted monitor structure are determined during wafer electrical tests (WET). The as-implanted concentration profile is determined for the boron-implanted control monitor structure and the thermal budget of the manufacturing process is determined. The as-implanted concentration profiles of the remaining monitor structures are determined using the thermal budget determined from the boron-implanted control monitor structure. The actual operating parameters of the ion implantation equipment is determined from the as-implanted concentration profiles.

摘要翻译： 一种在制造半导体器件期间获得用于离子注入工艺的精确实际离子注入设备的方法。 在离子注入过程期间，每个离子注入过程的监测器结构都注入离子。 用硼离子注入控制监视器结构。 在晶圆电测试（WET）期间确定所有植入监测器结构的浓度分布。 确定硼注入控制监视器结构的植入物浓度分布，并确定制造过程的热预算。 使用从硼注入控制监视器结构确定的热预算来确定剩余监视器结构的植入物浓度分布。 离子注入设备的实际操作参数由植入物浓度分布确定。

公开(公告)号：US5905434A

公开(公告)日：1999-05-18

申请号：US987253

申请日：1997-12-08

申请人： Paul J. Steffan ,  Ming Chun Chen

发明人： Paul J. Steffan ,  Ming Chun Chen

IPC分类号： B60Q1/50

CPC分类号： B60Q1/50 ,  B60Q2900/30

摘要： A vehicle communications system having a remote control unit installed in the interior of a vehicle and a display unit located on the exterior of the vehicle. The display unit has an input from the remote control unit and an input from a vehicle interface module that has inputs from the vehicle such as the braking system and the turning signal system. The remote control unit is controllable by the driver in the vehicle and has a table of preset and preprogrammed messages selectable by the driver. The driver selects a message to be displayed and sends the message to the display unit. Any input to the vehicle interface module from the vehicle signaling systems overrides the signal input from the remote control unit unless the display unit is mounted on the front of the vehicle. The driver can select a message from a table of messages that are sequentially displayed on the remote control unit. The table of messages is stored on a flash memory in the remote unit and in a flash memory in the display unit. The table of messages in the remote unit is programmable via a USB programming port. The table of messages in the display unit can be programmed via an RF signal sent to the display unit by the remote unit.

摘要翻译： 一种具有安装在车辆内部的遥控单元和位于车辆外部的显示单元的车辆通信系统。 显示单元具有来自遥控单元的输入和来自车辆接口模块的输入，其具有来自诸如制动系统和转向信号系统的车辆的输入。 遥控单元可由车内驾驶员控制，并具有可由驾驶员选择的预置和预编程信息表。 驱动程序选择要显示的消息，并将消息发送到显示单元。 来自车辆信号系统的车辆接口模块的任何输入都将覆盖从遥控单元输入的信号，除非显示单元安装在车辆前方。 驱动程序可以从依次显示在遥控器上的消息表中选择一条消息。 消息表存储在远程单元中的闪存和显示单元中的闪存中。 远程单元中的消息表可以通过USB编程端口进行编程。 显示单元中的消息表可以通过远程单元发送到显示单元的RF信号进行编程。

公开(公告)号：US07477631B2

公开(公告)日：2009-01-13

申请号：US10904292

申请日：2004-11-03

申请人： Ming-Chun Chen ,  Wuo-Hui Chu ,  Tsung-Hsien Chen

发明人： Ming-Chun Chen ,  Wuo-Hui Chu ,  Tsung-Hsien Chen

IPC分类号： H04L12/26

CPC分类号： H04L65/608 ,  H04L12/1868 ,  H04L12/189 ,  H04L12/2803 ,  H04L12/2838 ,  H04L29/06027 ,  H04L47/10 ,  H04L47/13 ,  H04L65/80

摘要： A method for transmitting data in real time in a multimedia data stream over a local network is provided. The local network comprises a sending end and one or more receiving ends. The method includes the steps of packaging a QoS (quality of service) control signal into a QoS packet according to a RTCP/TCP/IP protocol; packaging the multimedia data stream into a multimedia data packet according to a RTP/UDP/IP protocol; establishing a connection between the sending end and one of the one or more receiving ends; delivering the QoS packet and the multimedia data packet from the sending end to the one or more receiving end over the local network; and the one or more receiving end de-packaging the QoS packet into the QoS signal to control the transmission of the multimedia data stream.

摘要翻译： 提供了一种通过本地网络在多媒体数据流中实时传输数据的方法。 本地网络包括发送端和一个或多个接收端。 该方法包括根据RTCP / TCP / IP协议将QoS（服务质量）控制信号打包到QoS分组中的步骤; 根据RTP / UDP / IP协议将多媒体数据流打包成多媒体数据分组; 建立所述发送端和所述一个或多个接收端中的一个的连接; 通过本地网络将QoS分组和多媒体数据分组从发送端传送到一个或多个接收端; 并且所述一个或多个接收端将所述QoS分组解封装到所述QoS信号中以控制所述多媒体数据流的传输。

公开(公告)号：US6154711A

公开(公告)日：2000-11-28

申请号：US985467

申请日：1997-12-05

申请人： Paul J. Steffan ,  Ming Chun Chen

发明人： Paul J. Steffan ,  Ming Chun Chen

IPC分类号： G03F7/20 ,  H01L21/66

CPC分类号： G03F7/70625 ,  H01L22/20

摘要： A method of manufacturing semiconductor wafers using a simulation tool to determine a set of predicted wafer electrical test parameters. The set of predicted wafer electrical test parameters are compared with wafer electrical test specifications tabulated for each process during the manufacturing process. During the comparison, it is determined whether the predicted wafer electrical test parameters are within the specifications for the process and circuit simulations are then conducted using the predicted wafer electrical test parameters. Device performance is predicted from the circuit simulations and the disposition of the wafer lot is determined utilizing tabulated from a disposition performance table.

摘要翻译： 使用模拟工具制造半导体晶片以确定一组预测的晶片电测试参数的方法。 将预测的晶片电气测试参数的集合与在制造过程期间针对每个处理列出的晶片电气测试规格进行比较。 在比较期间，确定预测的晶片电气测试参数是否在该处理的规格内，然后使用预测的晶片电气测试参数进行电路仿真。 根据电路模拟预测器件性能，并利用从配置性能表格列出来确定晶片批次的布置。

公开(公告)号：US5966459A

公开(公告)日：1999-10-12

申请号：US896341

申请日：1997-07-17

申请人： Ming Chun Chen ,  Paul J. Steffan

发明人： Ming Chun Chen ,  Paul J. Steffan

IPC分类号： G06T7/00 ,  G06K9/00

CPC分类号： G06K9/00 ,  G06T7/0002 ,  G06T7/0004 ,  G06K2209/19 ,  G06T2207/30148

摘要： A method of determining classification codes for defects occurring in semiconductor manufacturing processes and for storing the information used to determine the classification codes. A wafer is selected from a production lot after the lot is sent through a first manufacturing process. The selected wafer is scanned to determine if there are defects on the wafer. Images of selected defects are examined and a numerical value is assigned to each of N elemental descriptor terms describing each defect. A classification code is determined for each defect based upon the numerical values assigned to the N elemental descriptor terms. The classification code and numerical values assigned to the N elemental descriptor terms are stored in a database. The wafer is sent through each sequential process and classification codes are assigned to additional defects selected after each sequential process. The classification codes and numerical values assigned to the N elemental descriptor terms for the additional selected defects are stored in the database. The stored numerical values assigned to the N elemental descriptor terms to modify the classification code. All of the defects stored in the database are assigned new classification codes in accordance with the modified classification code. A new classification code can be generated and all of the stored defects are assigned new classification codes in accordance with the new database.

摘要翻译： 确定半导体制造过程中出现的缺陷的分类代码并存储用于确定分类代码的信息的方法。 在批次通过第一制造过程发送之后，从生产批次中选择晶片。 扫描所选择的晶片以确定晶片上是否存在缺陷。 检查所选缺陷的图像，并且将数值分配给描述每个缺陷的N个元素描述符术语中的每一个。 基于分配给N个元素描述符项的数值，为每个缺陷确定分类代码。 分配给N个元素描述符词的分类代码和数值被存储在数据库中。 通过每个顺序过程发送晶片，并且将分类代码分配给在每个顺序处理之后选择的附加缺陷。 分配给附加选定缺陷的N个元素描述符项的分类代码和数值存储在数据库中。 分配给N个元素描述符术语的存储数值修改分类代码。 存储在数据库中的所有缺陷都按照修改的分类代码分配新的分类代码。 可以生成新的分类代码，并根据新数据库为所有存储的缺陷分配新的分类代码。

公开(公告)号：US08627258B2

公开(公告)日：2014-01-07

申请号：US13592765

申请日：2012-08-23

申请人： Peter Huang ,  Ming-Chun Chen

发明人： Peter Huang ,  Ming-Chun Chen

IPC分类号： G06F17/50 ,  H01L21/20 ,  H01L27/108 ,  H01L29/12 ,  H01L29/786 ,  H01L29/94 ,  H01L21/338 ,  H01L21/337 ,  H01L21/8242

CPC分类号： H01G4/33 ,  H01L22/14 ,  H01L22/20 ,  H01L27/0207 ,  H01L27/118 ,  H01L28/86

摘要： According to one exemplary embodiment, a method for adjusting geometry of a capacitor includes fabricating a first composite capacitor residing in a first standard cell with a first set of process parameters. The method further includes using a second standard cell having substantially same dimensions as the first standard cell. The method further includes using a capacitance value from the first composite capacitor to adjust a geometry of a second composite capacitor residing in the second standard cell, wherein the second composite capacitor is fabricated with a second set of process parameters. The geometry of the second composite capacitor can be adjusted to cause the second composite capacitor to have a capacitance value substantially equal to the capacitance value from the first composite capacitor.

摘要翻译： 根据一个示例性实施例，一种用于调整电容器几何形状的方法包括制造驻留在具有第一组工艺参数的第一标准单元中的第一复合电容器。 该方法还包括使用具有与第一标准单元基本相同的尺寸的第二标准单元。 该方法还包括使用来自第一复合电容器的电容值来调整驻留在第二标准单元中的第二复合电容器的几何形状，其中第二复合电容器由第二组工艺参数制成。 可以调整第二复合电容器的几何形状，使得第二复合电容器的电容值基本上等于来自第一复合电容器的电容值。

公开(公告)号：US20120329179A1

公开(公告)日：2012-12-27

申请号：US13593158

申请日：2012-08-23

申请人： Peter Huang ,  Ming-Chun Chen

发明人： Peter Huang ,  Ming-Chun Chen

IPC分类号： H01L21/66

CPC分类号： H01G4/33 ,  H01L22/14 ,  H01L22/20 ,  H01L27/0207 ,  H01L27/118 ,  H01L28/86

摘要： According to one exemplary embodiment, a method for adjusting geometry of a capacitor includes fabricating a first composite capacitor residing in a first standard cell with a first set of process parameters. The method further includes using a second standard cell having substantially same dimensions as the first standard cell. The method further includes using a capacitance value from the first composite capacitor to adjust a geometry of a second composite capacitor residing in the second standard cell, wherein the second composite capacitor is fabricated with a second set of process parameters. The geometry of the second composite capacitor can be adjusted to cause the second composite capacitor to have a capacitance value substantially equal to the capacitance value from the first composite capacitor.

摘要翻译： 根据一个示例性实施例，一种用于调整电容器几何形状的方法包括制造驻留在具有第一组工艺参数的第一标准单元中的第一复合电容器。 该方法还包括使用具有与第一标准单元基本相同的尺寸的第二标准单元。 该方法还包括使用来自第一复合电容器的电容值来调整驻留在第二标准单元中的第二复合电容器的几何形状，其中第二复合电容器由第二组工艺参数制成。 可以调整第二复合电容器的几何形状，使得第二复合电容器的电容值基本上等于来自第一复合电容器的电容值。