公开(公告)号：US07704757B2

公开(公告)日：2010-04-27

申请号：US10276509

申请日：2001-03-13

Applicant: Francis Dell'Ova ,  Frank Lhermet ,  Dominique Poirot ,  Stephane Rayon ,  Bertrand Gomez ,  Nicole Lessoile ,  Pierre Rizzo

Inventor： Francis Dell'Ova ,  Frank Lhermet ,  Dominique Poirot ,  Stephane Rayon ,  Bertrand Gomez ,  Nicole Lessoile ,  Pierre Rizzo

IPC: H01L21/00 ,  G06F19/00

CPC classification number: H01L22/14 ,  H01L22/20 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is provided for manufacturing an integrated electronic component arranged on a substrate wafer. According to the method, at least one metallization step is performed, and a value of an electrical parameter of the integrated electronic component is determined after the at least one metallization step. A subsequent metallization step is performed after determining the value of the electrical parameter. The subsequent metallization step is performed using an adjustment mask chosen from n predefined masks based on a desired value of the electrical parameter, so as to obtain the desired value of the electrical parameter of the integrated electronic component after manufacturing. In one preferred embodiment, a series of electrical tests is performed on the wafer using test equipment, and the value of the electrical parameter is determined using the same test equipment as is used to perform the series of electrical tests.

Abstract translation: 提供一种用于制造布置在基板晶片上的集成电子部件的方法。 根据该方法，执行至少一个金属化步骤，并且在至少一个金属化步骤之后确定集成电子部件的电参数的值。 在确定电参数的值之后执行随后的金属化步骤。 随后的金属化步骤使用基于电参数的期望值从n个预定义掩模中选择的调整掩模来执行，以便在制造之后获得集成电子部件的电参数的期望值。 在一个优选实施例中，使用测试设备对晶片进行一系列电测试，并且使用与用于执行一系列电测试的相同的测试设备来确定电参数的值。