公开(公告)号：US06605735B2

公开(公告)日：2003-08-12

申请号：US10236914

申请日：2002-09-09

申请人： Kazuhisa Kawano ,  Kenichi Sekimoto ,  Noriaki Oshima ,  Tetsuo Shibutami ,  Shuji Kumagai ,  Taishi Furukawa

发明人： Kazuhisa Kawano ,  Kenichi Sekimoto ,  Noriaki Oshima ,  Tetsuo Shibutami ,  Shuji Kumagai ,  Taishi Furukawa

IPC分类号： C07F1702

CPC分类号： C07F17/02 ,  C23C16/18

摘要： A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific example of which is (2,4-dimethyl-pentadienyl)(ethylcyclopentadienyl)ruthenium: or an organometallic ruthenium compound represented by the general formula (7), specific example of which is carbonylbis(2-methyl-1,3-pentadiene)ruthenium: as the precursor.

摘要翻译： 通过使用由通式（1）表示的有机金属钌化合物的化学气相沉积法等制备含钌的薄膜，其具体实例为（2,4-二甲基 - 戊二烯基）（乙基环戊二烯基） 钌或由通式（7）表示的有机金属钌化合物，其具体实例是羰基双（2-甲基-1,3-戊二烯）钌：作为前体。

公开(公告)号：US06461484B2

公开(公告)日：2002-10-08

申请号：US09931852

申请日：2001-08-20

申请人： Kamikura Yo ,  Naoki Yamada ,  Terushige Takeyama ,  Shuji Kumagai

发明人： Kamikura Yo ,  Naoki Yamada ,  Terushige Takeyama ,  Shuji Kumagai

IPC分类号： C23C1434

CPC分类号： C23C14/225 ,  C23C14/352 ,  H01J37/3405

摘要： A sputtering device is provided in which at least one target is sputtered by sputtering discharge to produce a film of target material on at least the first surface of a substrate. The sputtering device has a principal rotating mechanism that rotates the at least one target about an axis of revolution coaxial with the central axis of the substrate. The target is positioned offset from and circumferential to the central axis of the substrate coaxial with the axis of revolution. A magnet mechanism for magnetron discharge of the sputtering discharge forms a magnetic field asymmetrical to a central axis of the target and is rotated by an auxiliary rotating mechanism. The principal rotating mechanism integrates rotation of the targets with the magnet mechanism.