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1.发明授权公开(公告)号：US08742153B2
公开(公告)日：2014-06-03
申请号：US13504573
申请日：2010-11-29
申请人： Atsushi Maniwa , Noriaki Oshima , Kazuhisa Kawano , Taishi Furukawa , Hirokazu Chiba , Toshiki Yamamoto
发明人： Atsushi Maniwa , Noriaki Oshima , Kazuhisa Kawano , Taishi Furukawa , Hirokazu Chiba , Toshiki Yamamoto
IPC分类号： C07F17/02 , C23C16/18 , H01L21/316
CPC分类号： C07F17/02 , C23C16/18 , H01L21/28088 , H01L21/28556 , H01L21/31695 , H01L21/32051 , H01L29/4966
摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.
摘要翻译： 为了通过CVD法形成质量好的薄钌膜，需要在低温下形成薄膜。 因此，需要具有高热反应性的钌化合物。 本发明涉及以含有（2,4-二甲基戊二烯基）（乙基 - 环戊二烯基）钌和双（2,4-二甲基戊二烯基）钌的钌络合物混合物为原料的CVD等制造含钌膜的方法， 二甲基戊二烯基）钌，后者化合物的量为（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌的重量为0.1〜100重量％。
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2.发明授权Ruthenium compound, method of producing the same, method of producing ruthenium-containing thin film using the same, and ruthenium-containing thin film 有权钌化合物，其制造方法，使用该钌化合物的含钌薄膜的制造方法以及含钌化合物的薄膜公开(公告)号：US08748644B2
公开(公告)日：2014-06-10
申请号：US13129589
申请日：2009-12-21
CPC分类号： C07F17/02 , B01J31/2295 , C07F15/0046 , C23C16/18 , H01L28/65
摘要： This invention aims at providing (2,4-dimethylpentadienyl)-(ethylcyclopentadienyl)ruthenium which may contain its related structure compound, from which a ruthenium-containing thin film can be produced; a method of producing the same; a method of producing the ruthenium-containing thin film using the same; the ruthenium-containing thin film; and the like. The invention relates to producing the thin film using, as a precursor, (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound in an amount not more than 5% by weight, which can be obtained by separating the related structure compound from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound.
摘要翻译： 本发明的目的在于提供可含有其相关结构化合物的（2,4-二甲基戊二烯基） - （乙基环戊二烯基）钌，由此可以制备含钌的薄膜; 其制造方法; 使用该含钌的薄膜的制造方法; 含钌的薄膜; 等等。 本发明涉及使用含有不超过5重量％的相关结构化合物作为前体的（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌作为前体制备薄膜，其可以通过分离相关结构 含有相关结构化合物的（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌的化合物。
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3.发明授权Ruthenium complex, process for producing the same and process for producing thin film 有权钌络合物，其制造方法和制造薄膜的方法公开(公告)号：US06605735B2
公开(公告)日：2003-08-12
申请号：US10236914
申请日：2002-09-09
申请人： Kazuhisa Kawano , Kenichi Sekimoto , Noriaki Oshima , Tetsuo Shibutami , Shuji Kumagai , Taishi Furukawa
发明人： Kazuhisa Kawano , Kenichi Sekimoto , Noriaki Oshima , Tetsuo Shibutami , Shuji Kumagai , Taishi Furukawa
IPC分类号： C07F1702
摘要： A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific example of which is (2,4-dimethyl-pentadienyl)(ethylcyclopentadienyl)ruthenium: or an organometallic ruthenium compound represented by the general formula (7), specific example of which is carbonylbis(2-methyl-1,3-pentadiene)ruthenium: as the precursor.
摘要翻译： 通过使用由通式（1）表示的有机金属钌化合物的化学气相沉积法等制备含钌的薄膜，其具体实例为（2,4-二甲基 - 戊二烯基）（乙基环戊二烯基） 钌或由通式（7）表示的有机金属钌化合物，其具体实例是羰基双（2-甲基-1,3-戊二烯）钌：作为前体。
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4.发明授权Organometallic iridium compound, process of producing the same, and process of producing thin film 有权有机金属铱化合物，其制造方法以及薄膜的制造方法公开(公告)号：US06884902B2
公开(公告)日：2005-04-26
申请号：US10827448
申请日：2004-04-20
申请人： Mayumi Takamori , Noriaki Oshima , Kazuhisa Kawano
发明人： Mayumi Takamori , Noriaki Oshima , Kazuhisa Kawano
IPC分类号： C07C13/15 , C07C11/12 , C07C13/23 , C07F15/00 , C07F17/00 , C23C16/18 , C23C16/40 , H01L21/02 , H01L21/28 , H01L21/285 , C07F17/02 , B05D3/06 , C23C16/00
摘要： An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2): wherein R1 represents hydrogen or a lower alkyl group; R2 to R7 each represents hydrogen, a halogen, or the like, provided that specific combinations of R1 to R7 are excluded; R8 represents a lower alkyl group; R9 to R12 each represents hydrogen, a halogen, or the like, provided that specific combinations of R8 to R12 are excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.
摘要翻译： 提供了一种通过CVD工艺形成含铱薄膜的基板上具有低熔点，优异的蒸发特性和低成膜温度的有机金属化合物。 有机金属铱化合物由以下通式（1）或（2）表示：其中R 1表示氢或低级烷基; R 2至R 7各自表示氢，卤素等，条件是R 1至R 7的特定组合 被排除在外; R 8表示低级烷基; R 9至R 12各自表示氢，卤素等，条件是R 8与R 12的特定组合 被排除。 含铱的薄膜是通过化学气相沉积法使用该化合物作为前体来制备的。
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5.发明申请公开(公告)号：US20120227625A1
公开(公告)日：2012-09-13
申请号：US13504573
申请日：2010-11-29
申请人： Atsushi Maniwa , Noriaki Oshima , Kazuhisa Kawano , Taishi Furukawa , Hirokazu Chiba , Toshiki Yamamoto
发明人： Atsushi Maniwa , Noriaki Oshima , Kazuhisa Kawano , Taishi Furukawa , Hirokazu Chiba , Toshiki Yamamoto
IPC分类号： C07F15/00
CPC分类号： C07F17/02 , C23C16/18 , H01L21/28088 , H01L21/28556 , H01L21/31695 , H01L21/32051 , H01L29/4966
摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.
摘要翻译： 为了通过CVD法形成质量好的薄钌膜，需要在低温下形成薄膜。 因此，需要具有高热反应性的钌化合物。 本发明涉及以含有（2,4-二甲基戊二烯基）（乙基 - 环戊二烯基）钌和双（2,4-二甲基戊二烯基）钌的钌络合物混合物为原料的CVD等制造含钌膜的方法， 二甲基戊二烯基）钌，后者化合物的量为（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌的重量为0.1〜100重量％。
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6.发明申请RUTHENIUM COMPOUND, METHOD OF PRODUCING THE SAME, METHOD OF PRODUCING RUTHENIUM-CONTAINING THIN FILM USING THE SAME, AND RUTHENIUM-CONTAINING THIN FILM 有权钌络合物，其制造方法，使用其制造含有薄膜的薄膜的方法和含有薄膜的薄膜公开(公告)号：US20110224453A1
公开(公告)日：2011-09-15
申请号：US13129589
申请日：2009-12-21
IPC分类号： C07F13/00
CPC分类号： C07F17/02 , B01J31/2295 , C07F15/0046 , C23C16/18 , H01L28/65
摘要： This invention aims at providing (2,4-dimethylpentadienyl)-(ethylcyclopentadienyl)ruthenium which may contain its related structure compound, from which a ruthenium-containing thin film can be produced; a method of producing the same; a method of producing the ruthenium-containing thin film using the same; the ruthenium-containing thin film; and the like. The invention relates to producing the thin film using, as a precursor, (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound in an amount not more than 5% by weight, which can be obtained by separating the related structure compound from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound.
摘要翻译： 本发明的目的在于提供可含有其相关结构化合物的（2,4-二甲基戊二烯基） - （乙基环戊二烯基）钌，由此可以制备含钌的薄膜; 其制造方法; 使用该含钌的薄膜的制造方法; 含钌的薄膜; 等等。 本发明涉及使用以不超过5重量％的量含有相关结构化合物的（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌作为前体的方法制备薄膜，其可以通过分离相关结构 含有相关结构化合物的（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌的化合物。
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7.发明授权Organometallic iridium compound, process for producing the same and process for preparing film 有权有机金属铱化合物，其制备方法和制备膜的方法公开(公告)号：US07265233B2
公开(公告)日：2007-09-04
申请号：US10568388
申请日：2004-08-11
申请人： Kazuhisa Kawano , Mayumi Takamori , Noriaki Oshima
发明人： Kazuhisa Kawano , Mayumi Takamori , Noriaki Oshima
摘要： An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-based films using the organometallic compound are provided.The organometallic iridium compound represented by the formula (1) (example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4) with a compound represented by the formula (2) or (3) An iridium-based film is prepared using the compound as a precursor. In the formulae, R1 represents hydrogen atom or a lower alkyl group; R2 represents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.
摘要翻译： 提供了一种有机金属铱化合物，其熔点低，汽化特性优异，基材上成膜温度低，化合物的制造方法以及使用有机金属化合物制备铱系膜的方法。 由式（1）表示的有机金属铱化合物（具体化合物：（乙基环戊二烯基）双（乙烯）铱的实例）通过使式（4）表示的化合物与式（2）表示的化合物或式 （3）使用该化合物作为前体制备铱系膜。 在式中，R 1表示氢原子或低级烷基; R 2表示低级烷基; X表示卤原子; M表示碱金属。
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8.发明申请Organoiridium compound, process for producing the same, and process for producing film 有权有机铱化合物，其制造方法以及膜的制造方法公开(公告)号：US20060204660A1
公开(公告)日：2006-09-14
申请号：US10568388
申请日：2004-08-11
申请人： Kazuhisa Kawano , Mayumi Takamori , Noriaki Oshima
发明人： Kazuhisa Kawano , Mayumi Takamori , Noriaki Oshima
摘要： An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-containing films using the organometallic compound are provided. The organometallic iridium compound represented by the formula (1) (example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4) with a compound represented by the formula (2) or (3) An iridium-containing film is prepared using the compound as a precursor. In the formulae, R1 represents hydrogen atom or a lower alkyl group; R2 represents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.
摘要翻译： 提供了一种有机金属铱化合物，其熔点低，汽化特性优异，基材上成膜温度低，化合物的制造方法，以及使用有机金属化合物制备含铱膜的方法。 由式（1）表示的有机金属铱化合物（具体化合物：（乙基环戊二烯基）双（乙烯）铱的实例）通过使式（4）表示的化合物与式（2）表示的化合物或式 （3）使用该化合物作为前体制备含铱膜。 在式中，R 1表示氢原子或低级烷基; R 2表示低级烷基; X表示卤原子; M表示碱金属。
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