Abstract:
A color filter includes a transparent substrate, a transparent conductive layer, a plurality of filter layers, and a plurality of bumps. The filter layers are disposed between the transparent substrate and the transparent conductive layer, and the bumps are disposed on a plane of the transparent conductive layer. A sheet resistance of each of the bumps is above 1014Ω/□, and an optical density (OD) of each of the bumps is above 1.5.
Abstract:
A method for forming multicolor color filters is disclosed. First, a first patterned color layer is formed on a substrate. Second, a second patterned color layer and a third patterned color layer are respectively formed on the substrate with the first patterned color layer. Then the first patterned color layer, the second patterned color layer and the third patterned color layer are baked together to simultaneously transform the first patterned color layer, the second patterned color layer and the third patterned color layer to respectively become a first pixel color layer, a second pixel color layer and a third pixel color layer of the multicolor color filters, respectively.
Abstract:
A color filter includes a transparent substrate, a transparent conductive layer, a plurality of filter layers, and a plurality of bumps. The filter layers are disposed between the transparent substrate and the transparent conductive layer, and the bumps are disposed on a plane of the transparent conductive layer. A sheet resistance of each of the bumps is above 1014Ω/□, and an optical density (OD) of each of the bumps is above 1.5.
Abstract:
The present invention discloses a method of forming exposure patterns. These steps of the present method comprise: a substrate is provided; a photoresist layer is formed over the substrate; subsequently, a photo mask with a pattern is placed and aligned to a corresponding location over the photoresist layer for at least double exposure processes, and the photo mask with a pattern is moved and aligned to another corresponding location over the photoresist layer during at least one exposure process; successively, at least one filter is provided to perform at least one exposure process, and the filter is placed above or below the photo mask; and the patterns with different dimensions are consequently formed on the substrate after partial photoresist is removed during a later developing process.
Abstract:
The present invention discloses a method of forming exposure patterns. These steps of the present method comprise: a substrate is provided; a photoresist layer is formed over the substrate; subsequently, a photo mask with a pattern is placed and aligned to a corresponding location over the photoresist layer for at least double exposure processes, and the photo mask with a pattern is moved and aligned to another corresponding location over the photoresist layer during at least one exposure process; successively, at least one filter is provided to perform at least one exposure process, and the filter is placed above or below the photo mask; and the patterns with different dimensions are consequently formed on the substrate after partial photoresist is removed during a later developing process.
Abstract:
Apparatus for use as a lighthouse in the manufacture of a color cathode ray tube (CRT) includes a housing with a cover lens. Disposed within the housing is a light source assembly including a light source in the form of a cylindrical shaped mercury lamp and an optical aperture closely spaced to the mercury lamp. The mercury lamp directs light through the optical aperture as well as through the cover lens onto the inner surface of the CRT's glass faceplate in a photo-stenciling process for registering, or aligning, phosphor dots on the faceplate's inner surface with electron beam passing apertures in the CRT's color selection electrode, or shadow mask. The optical aperture is elongated, with its longitudinal axis aligned generally transverse to the longitudinal axis of the mercury lamp, and is curvilinear having from two (2) to eight (8) inflection points along its length. The inflection points of the optical aperture, or the points along its length where it undergoes a slope reversal, direct the light beam through the shadow mask apertures and onto the CRT's faceplate in a manner which closely simulates electron beam trajectories under the influence of a self-convergent magnetic deflection yoke to correct for residual misregistration errors arising from the use of the self-convergent magnetic deflection yoke in the CRT. The unique shape of the optical aperture also reduces registration sensitivity of the light beam directed onto the faceplate, thus relaxing alignment tolerances and assembly precision of the light source and associated components.