公开(公告)号：US4782037A

公开(公告)日：1988-11-01

申请号：US925458

申请日：1986-10-30

申请人： Akihiro Tomozawa ,  Yoku Kaino ,  Shigeru Shimada ,  Nozomi Horino ,  Yoshiaki Yoshiura ,  Osamu Tsuchiya ,  Shozo Hosoda

发明人： Akihiro Tomozawa ,  Yoku Kaino ,  Shigeru Shimada ,  Nozomi Horino ,  Yoshiaki Yoshiura ,  Osamu Tsuchiya ,  Shozo Hosoda

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/441 ,  H01L21/473

CPC分类号： H01L23/5329 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2924/0002

摘要： Herein disclosed is a process of fabricating a semiconductor integrated circuit device, in which there is formed between a conductive layer prepared by covering a polycrystalline silicon layer with either a layer containing a refractory metal of high melting point, i.e., a refractory metal layer or a silicide layer of the refractory metal and a first insulating film made of phosphosilicate glass flowing over said conductive layer containing the refractory metal, a second insulating film preventing the layer containing a refractory metal from peeling from the polycrystalline silicon layer by the glass flow. The second insulating film is formed by deposition to have a thickness not smaller than a predetermined value.

摘要翻译： 这里公开了一种制造半导体集成电路器件的方法，其中形成在通过将多晶硅层与含有高熔点难熔金属的层（即，难熔金属层）或 难熔金属的硅化物层和由磷硅酸盐玻璃制成的第一绝缘膜，所述第一绝缘膜流过含有难熔金属的导电层，第二绝缘膜防止含有难熔金属的层通过玻璃流从多晶硅层剥离。 通过沉积形成第二绝缘膜以具有不小于预定值的厚度。