INSULATION MATERIAL FOR A DC ELECTRICAL COMPONENT

    公开(公告)号:US20200035375A1

    公开(公告)日:2020-01-30

    申请号:US16593379

    申请日:2019-10-04

    Applicant: ABB Schweiz AG

    Abstract: An insulation material for a DC electrical component. The insulation material includes a thermoset or thermoplastic matrix and a functional filler component. The functional filler component has a non-linear DC conductivity depending on an applied electrical field strength. At least in a temperature range of 0° C. to 120° C., the functional filler component has a bandgap in the range of 2 to 5 eV, and optionally in the range of 2 to 4 eV. Furthermore, a method for producing an insulation material, a use of an insulation material for a high voltage DC electrical component, a DC electrical component comprising the insulation material and the use of a DC electrical component comprising the insulation material in a high voltage DC gas insulated device are suggested.

    Power semiconductor device and method for producing a power semiconductor device

    公开(公告)号:US10546795B2

    公开(公告)日:2020-01-28

    申请号:US15971262

    申请日:2018-05-04

    Applicant: ABB Schweiz AG

    Abstract: The present application relates to a power semiconductor device, including a substrate having a first side and a second side, the first side and the second side being located opposite to each other, wherein the first side includes a cathode and the second side includes an anode, wherein a junction termination of a p/n-junction is provided at at least one surface of the substrate, preferably at at least one of the first side and the second side, the junction termination is coated by a passivating coating, the passivating coating including at least one material selected from the group consisting of an inorganic-organic composite material, parylene, and a phenol resin comprising polymeric particles. A device as described above thus addresses issues of passivation of junction terminations and thus prevents or at least reduces the danger of fatal defects such as unstable device operation caused by changes in film properties, instability, water permeability, permeability of movable ions such as sodium, pinholes and cracks, and aluminum metal disconnection or corrosion due to degradation and stress.

    POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR DEVICE

    公开(公告)号:US20180254233A1

    公开(公告)日:2018-09-06

    申请号:US15971262

    申请日:2018-05-04

    Applicant: ABB Schweiz AG

    Abstract: The present application relates to a power semiconductor device, including a substrate having a first side and a second side, the first side and the second side being located opposite to each other, wherein the first side includes a cathode and the second side includes an anode, wherein a junction termination of a p/n-junction is provided at at least one surface of the substrate, preferably at at least one of the first side and the second side, the junction termination is coated by a passivating coating, the passivating coating including at least one material selected from the group consisting of an inorganic-organic composite material, parylene, and a phenol resin comprising polymeric particles. A device as described above thus addresses issues of passivation of junction terminations and thus prevents or at least reduces the danger of fatal defects such as unstable device operation caused by changes in film properties, instability, water permeability, permeability of movable ions such as sodium, pinholes and cracks, and aluminum metal disconnection or corrosion due to degradation and stress.

    Power capacitor unit for high pressure applications

    公开(公告)号:US10276304B2

    公开(公告)日:2019-04-30

    申请号:US15781344

    申请日:2016-10-10

    Applicant: ABB Schweiz AG

    Abstract: A power capacitor unit for high-pressure applications is provided. The power capacitor unit includes a housing, a plurality of capacitor elements connected to each other and arranged inside the housing, a dielectric liquid (L), a solid electrical insulation system arranged to electrically insulate each capacitor element, a busbar, a plurality of fuse wires, each fuse wire having a first end connected to a respective capacitor element and a second end connected to the busbar (B), wherein the capacitor elements, the solid electrical insulation system, and the fuse wires are immersed in the dielectric liquid (L). Each fuse wire has a plurality of first sections that are in physical contact with the electrical insulation system, and wherein each fuse wire has a plurality of second sections without physical contact with the solid electrical insulation system.

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