公开(公告)号：US09000480B2

公开(公告)日：2015-04-07

申请号：US13861074

申请日：2013-04-11

Applicant: ABB Technology AG

Inventor： Munaf Rahimo ,  Wolfgang Janisch ,  Eustachio Faggiano

IPC: H01L29/66 ,  H01L27/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/739

CPC classification number: H01L27/0664 ,  H01L29/0834 ,  H01L29/41708 ,  H01L29/66333 ,  H01L29/7395

Abstract: A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A first layer of a first conductivity type is created on a collector side before a second layer of a second conductivity type is created on the collector side. An electrical contact in direct electrical contact with the first and second layers is created on the collector side. A shadow mask is applied on the collector side, and a third layer of the first conductivity type is created through the shadow mask. At least one electrically conductive island, which is part of a second electrical contact in the finalized RC-IGBT, is created through the shadow mask. The island is used as a mask for creating the second layer, and those parts of the third layer which are covered by the island form the second layer.

Abstract translation: 提供了包括续流二极管和绝缘栅双极晶体管（IGBT）的反向导电半导体器件（RC-IGBT）以及制造RC-IGBT的方法。 在集电器侧产生第二导电类型的第二层之前，在集电极侧产生第一导电类型的第一层。 在集电器侧产生与第一和第二层直接电接触的电接触。 在收集器侧施加荫罩，通过荫罩产生第一导电类型的第三层。 通过荫罩产生至少一个作为最终RC-IGBT中的第二电接触部分的导电岛。 岛用作创建第二层的掩模，并且被岛覆盖的第三层的那些部分形成第二层。

公开(公告)号：US20130228823A1

公开(公告)日：2013-09-05

申请号：US13861074

申请日：2013-04-11

Applicant: ABB TECHNOLOGY AG

Inventor： Munaf RAHIMO ,  Wolfgang Janisch ,  Eustachio Faggiano

IPC: H01L27/06

CPC classification number: H01L27/0664 ,  H01L29/0834 ,  H01L29/41708 ,  H01L29/66333 ,  H01L29/7395

Abstract: A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A first layer of a first conductivity type is created on a collector side before a second layer of a second conductivity type is created on the collector side. An electrical contact in direct electrical contact with the first and second layers is created on the collector side. A shadow mask is applied on the collector side, and a third layer of the first conductivity type is created through the shadow mask. At least one electrically conductive island, which is part of a second electrical contact in the finalized RC-IGBT, is created through the shadow mask. The island is used as a mask for creating the second layer, and those parts of the third layer which are covered by the island form the second layer.

Abstract translation: 提供了包括续流二极管和绝缘栅双极晶体管（IGBT）的反向导电半导体器件（RC-IGBT）以及制造RC-IGBT的方法。 在集电器侧产生第二导电类型的第二层之前，在集电极侧产生第一导电类型的第一层。 在集电器侧产生与第一和第二层直接电接触的电接触。 在收集器侧施加荫罩，通过荫罩产生第一导电类型的第三层。 通过荫罩产生至少一个作为最终RC-IGBT中的第二电接触部分的导电岛。 岛用作创建第二层的掩模，并且被岛覆盖的第三层的那些部分形成第二层。