公开(公告)号：US20140225245A1

公开(公告)日：2014-08-14

申请号：US14257397

申请日：2014-04-21

Applicant: ABB Technology AG

Inventor： Franc DUGAL ,  Dominik Trüssel

IPC: H01L23/492 ,  H01L23/58

CPC classification number: H01L23/492 ,  H01L23/051 ,  H01L23/585 ,  H01L23/62 ,  H01L24/72 ,  H01L25/072 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

Abstract: A power semiconductor module and a power semiconductor module assembly, which includes a plurality of power semiconductor modules, are disclosed. The power semiconductor module includes an electrically conducting base plate, an electrically conducting top plate, arranged in parallel to the base plate and spaced apart from the base plate, at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate, and at least one presspin, which is arranged in the space formed between the base plate and the top plate to provide contact between the semiconductor device and the top plate. A metallic protection plate can be provided at an inner face of the top plate facing towards the base plate, wherein the material of the protection plate has a melting temperature higher than the melting temperature of the top plate.

Abstract translation: 公开了一种功率半导体模块和功率半导体模块组件，其包括多个功率半导体模块。 功率半导体模块包括导电基板，导电顶板，平行于基板并与基板间隔开，至少一个功率半导体器件，其设置在基板上形成的空间中 在基板和顶板之间，以及至少一个压扣，其布置在形成在基板和顶板之间的空间中，以提供半导体器件和顶板之间的接触。 金属保护板可以设置在顶板的面向底板的内表面处，其中保护板的材料的熔化温度高于顶板的熔化温度。